I. Trimaille

981 total citations
62 papers, 767 citations indexed

About

I. Trimaille is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computational Mechanics. According to data from OpenAlex, I. Trimaille has authored 62 papers receiving a total of 767 indexed citations (citations by other indexed papers that have themselves been cited), including 44 papers in Electrical and Electronic Engineering, 23 papers in Materials Chemistry and 14 papers in Computational Mechanics. Recurrent topics in I. Trimaille's work include Semiconductor materials and devices (41 papers), Ion-surface interactions and analysis (14 papers) and Thin-Film Transistor Technologies (11 papers). I. Trimaille is often cited by papers focused on Semiconductor materials and devices (41 papers), Ion-surface interactions and analysis (14 papers) and Thin-Film Transistor Technologies (11 papers). I. Trimaille collaborates with scholars based in France, Brazil and Germany. I. Trimaille's co-authors include J.‐J. Ganem, S. Rigo, F. C. Stedile, I. Vickridge, I. J. R. Baumvol, L.G. Gosset, Yasushi Hoshino, F. Martín, G. Battistig and I. J. R. Baumvol and has published in prestigious journals such as Proceedings of the National Academy of Sciences, Physical Review Letters and Applied Physics Letters.

In The Last Decade

I. Trimaille

60 papers receiving 761 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
I. Trimaille France	16	602	304	120	95	81	62	767
Marie‐Laure David France	17	571 0.9×	358 1.2×	154 1.3×	26 0.3×	86 1.1×	61	830
R. Brenier France	15	421 0.7×	465 1.5×	283 2.4×	58 0.6×	66 0.8×	47	782
Klaus‐Peter Lieb Germany	13	185 0.3×	242 0.8×	213 1.8×	49 0.5×	41 0.5×	29	483
A. Cachard France	13	297 0.5×	181 0.6×	101 0.8×	48 0.5×	37 0.5×	33	557
M. W. Bench United States	11	290 0.5×	285 0.9×	235 2.0×	41 0.4×	50 0.6×	19	585
M. Jiménez de Castro Spain	16	436 0.7×	696 2.3×	46 0.4×	123 1.3×	227 2.8×	64	914
H. M. Naguib Canada	8	285 0.5×	510 1.7×	458 3.8×	49 0.5×	100 1.2×	17	769
A. Yu. Didyk Russia	13	256 0.4×	227 0.7×	265 2.2×	42 0.4×	21 0.3×	100	650
A.A. Melo Portugal	9	138 0.2×	174 0.6×	96 0.8×	59 0.6×	33 0.4×	38	368
P. Willich Germany	15	260 0.4×	252 0.8×	50 0.4×	93 1.0×	31 0.4×	41	556

Countries citing papers authored by I. Trimaille

Since Specialization

Citations

This map shows the geographic impact of I. Trimaille's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. Trimaille with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. Trimaille more than expected).

Fields of papers citing papers by I. Trimaille

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. Trimaille. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. Trimaille. The network helps show where I. Trimaille may publish in the future.

Co-authorship network of co-authors of I. Trimaille

This figure shows the co-authorship network connecting the top 25 collaborators of I. Trimaille. A scholar is included among the top collaborators of I. Trimaille based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I. Trimaille. I. Trimaille is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Gorni, Giulio, I. Trimaille, J.‐J. Ganem, et al.. (2024). Exploring OH incorporation pathways in pulsed laser deposited EuOOH thin films. Applied Surface Science. 670. 160581–160581.

Cagnon, L., Panayotis Spathis, P. E. Wolf, et al.. (2020). Direct Observation of Homogeneous Cavitation in Nanopores. Physical Review Letters. 125(25). 255701–255701. 9 indexed citations

Pongrácz, A., Yasushi Hoshino, M. D’Angelo, et al.. (2009). Isotopic tracing study of the growth of silicon carbide nanocrystals at the SiO2/Si interface by CO annealing. Journal of Applied Physics. 106(2). 8 indexed citations

Vickridge, I., et al.. (2007). Growth of SiO₂on SiC by dry thermal oxidation: mechanisms. Journal of Physics D Applied Physics. 40(20). 6254–6263. 63 indexed citations

Vickridge, I., J.‐J. Ganem, I. Trimaille, & J. L. Cantin. (2005). The contribution of stable isotopic tracing, narrow nuclear resonance depth profiling, and a simple stochastic theory of charged particle energy loss to studies of the dry thermal oxidation of SiC. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 232(1-4). 272–279. 5 indexed citations

Almeida, Rita M. C. de, I. J. R. Baumvol, J.‐J. Ganem, I. Trimaille, & S. Rigo. (2004). Thermal growth of silicon oxynitride films on Si: A reaction-diffusion approach. Journal of Applied Physics. 95(4). 1770–1773. 3 indexed citations

Radtke, C., I. J. R. Baumvol, F. C. Stedile, et al.. (2003). Thermal growth of SiO2 on SiC investigated by isotopic tracing and subnanometric depth profiling. Applied Surface Science. 212-213. 570–574. 3 indexed citations

Vickridge, I., I. Trimaille, J.‐J. Ganem, et al.. (2002). Limiting Step Involved in the Thermal Growth of Silicon Oxide Films on Silicon Carbide. Physical Review Letters. 89(25). 256102–256102. 33 indexed citations

Vickridge, I., D. Tromson, I. Trimaille, et al.. (2002). Oxygen isotopic exchange occurring during dry thermal oxidation of 6H SiC. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 190(1-4). 574–578. 19 indexed citations

10.

Trimaille, I., J.‐J. Ganem, L.G. Gosset, et al.. (1999). Furnace Oxynitridation in Nitric Oxide of Thin Silicon Oxide: Atomic Transport Mechanisms and Interfacial Microstructure. MRS Proceedings. 592. 2 indexed citations

11.

Åkermark, Torbjörn, L.G. Gosset, J.‐J. Ganem, et al.. (1999). Time dependence of the oxygen exchange O2↔SiO2 at the SiO2–Si interface during dry thermal oxidation of silicon. Journal of Applied Physics. 86(2). 1153–1155. 16 indexed citations

12.

Trimaille, I. & J.‐J. Ganem. (1997). Isotopic tracing of oxigen during thermal growth of thin films of SiO2 on Si in dry O2. Brazilian Journal of Physics. 27(2). 293–301. 2 indexed citations

13.

Ganem, J.‐J., et al.. (1997). Diffusion of near surface defects during the thermal oxidation of silicon. Journal of Applied Physics. 81(12). 8109–8111. 24 indexed citations

14.

Baumvol, I. J. R., F. C. Stedile, J.‐J. Ganem, I. Trimaille, & S. Rigo. (1996). Thermal Nitridation of SiO2 Films in Ammonia: Isotopic Tracing of Nitrogen and Oxygen in the Initial Stages. Journal of The Electrochemical Society. 143(9). 2938–2945. 17 indexed citations

15.

Rigo, S., J.‐J. Ganem, F. C. Stedile, I. Trimaille, & I. J. R. Baumvol. (1994). The effects of ion implantation through very thin silicon oxide films. Brazilian Journal of Physics. 24(2). 529–537. 2 indexed citations

16.

Stedile, F. C., I. J. R. Baumvol, J.‐J. Ganem, et al.. (1994). IBA study of the growth mechanisms of very thin silicon oxide films: the effect of wafer cleaning. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 85(1-4). 248–254. 10 indexed citations

17.

Ganem, J.‐J., S. Rigo, & I. Trimaille. (1993). Modellization of the silicon rapid thermal oxidation in the initial stages according to the silicon fragments model. Microelectronic Engineering. 22(1-4). 35–38. 4 indexed citations

18.

Ganem, J.‐J., et al.. (1992). Deuteron beam analysis of rapid thermal nitridation of silicon and thin SiO2 films. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 64(1-4). 778–783. 7 indexed citations

19.

Stathis, J. H., S. Rigo, & I. Trimaille. (1991). Oxygen interaction with defects at the Si/SiO2 interface. Solid State Communications. 79(2). 119–120. 3 indexed citations

20.

Trimaille, I. & S. Rigo. (1989). Use of 18O isotopic labelling to study thermal dry oxidation of silicon as a function of temperature and pressure. Applied Surface Science. 39(1-4). 65–80. 42 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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