Anja Dobrich

1.1k total citations
19 papers, 360 citations indexed

About

Anja Dobrich is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Anja Dobrich has authored 19 papers receiving a total of 360 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 7 papers in Materials Chemistry. Recurrent topics in Anja Dobrich's work include Semiconductor materials and devices (10 papers), Thin-Film Transistor Technologies (5 papers) and Semiconductor Quantum Structures and Devices (4 papers). Anja Dobrich is often cited by papers focused on Semiconductor materials and devices (10 papers), Thin-Film Transistor Technologies (5 papers) and Semiconductor Quantum Structures and Devices (4 papers). Anja Dobrich collaborates with scholars based in Germany, Spain and Japan. Anja Dobrich's co-authors include Thomas Hannappel, Peter Kleinschmidt, Sebastian Brückner, Caspar Leendertz, T. F. Schulze, Lars Korte, B. Rech, Oliver Supplie, Henning Döscher and Agnieszka Paszuk and has published in prestigious journals such as Applied Physics Letters, Physical Review B and Applied Surface Science.

In The Last Decade

Anja Dobrich

18 papers receiving 353 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Anja Dobrich Germany 11 319 153 143 82 32 19 360
Agnieszka Paszuk Germany 11 228 0.7× 139 0.9× 83 0.6× 86 1.0× 33 1.0× 35 287
J. Penaud Belgium 10 354 1.1× 157 1.0× 136 1.0× 57 0.7× 22 0.7× 31 372
Naser Tajik Canada 5 225 0.7× 150 1.0× 117 0.8× 274 3.3× 35 1.1× 7 348
Marinus Fischer Netherlands 10 281 0.9× 106 0.7× 163 1.1× 66 0.8× 8 0.3× 17 353
M. Carroll United States 13 502 1.6× 265 1.7× 96 0.7× 224 2.7× 19 0.6× 28 550
G. Weidner Germany 10 281 0.9× 72 0.5× 171 1.2× 31 0.4× 37 1.2× 37 315
P. Sana United States 7 309 1.0× 95 0.6× 140 1.0× 50 0.6× 14 0.4× 15 348
P.D. Ye United States 10 628 2.0× 186 1.2× 202 1.4× 116 1.4× 34 1.1× 19 674
Igor Krylov Israel 12 390 1.2× 96 0.6× 172 1.2× 30 0.4× 42 1.3× 39 429
Anyan Du China 8 179 0.6× 59 0.4× 70 0.5× 41 0.5× 34 1.1× 36 213

Countries citing papers authored by Anja Dobrich

Since Specialization
Citations

This map shows the geographic impact of Anja Dobrich's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Anja Dobrich with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Anja Dobrich more than expected).

Fields of papers citing papers by Anja Dobrich

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Anja Dobrich. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Anja Dobrich. The network helps show where Anja Dobrich may publish in the future.

Co-authorship network of co-authors of Anja Dobrich

This figure shows the co-authorship network connecting the top 25 collaborators of Anja Dobrich. A scholar is included among the top collaborators of Anja Dobrich based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Anja Dobrich. Anja Dobrich is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Paszuk, Agnieszka, Oliver Supplie, Sebastian Brückner, et al.. (2021). Atomic surface control of Ge(100) in MOCVD reactors coated with (Ga)As residuals. Applied Surface Science. 565. 150513–150513. 3 indexed citations
2.
Supplie, Oliver, Oleksandr Romanyuk, Agnieszka Paszuk, et al.. (2018). Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory. Progress in Crystal Growth and Characterization of Materials. 64(4). 103–132. 44 indexed citations
3.
Paszuk, Agnieszka, Oliver Supplie, Sebastian Brückner, et al.. (2018). Double-layer stepped Si(1 0 0) surfaces prepared in As-rich CVD ambience. Applied Surface Science. 462. 1002–1007. 14 indexed citations
4.
Brückner, Sebastian, Oliver Supplie, Anja Dobrich, Peter Kleinschmidt, & Thomas Hannappel. (2017). Control Over Dimer Orientations on Vicinal Si(100) Surfaces in Hydrogen Ambient: Kinetics Versus Energetics. physica status solidi (b). 255(4). 13 indexed citations
5.
Paszuk, Agnieszka, Oliver Supplie, Sebastian Brückner, et al.. (2017). In situ control over the sublattice orientation of GaP/Si(100): As virtual substrates for tandem absorbers. 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC). 2538–2542. 2 indexed citations
6.
Paszuk, Agnieszka, Sebastian Brückner, Anja Dobrich, et al.. (2016). Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy. Applied Surface Science. 392. 1043–1048. 11 indexed citations
7.
Paszuk, Agnieszka, Anja Dobrich, Sebastian Brückner, et al.. (2016). In situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient. Journal of Crystal Growth. 464. 14–19. 10 indexed citations
8.
Paszuk, Agnieszka, Sebastian Brückner, Weian Zhao, et al.. (2015). Controlling the polarity of metalorganic vapor phase epitaxy-grown GaP on Si(111) for subsequent III-V nanowire growth. Applied Physics Letters. 106(23). 16 indexed citations
9.
Dobrich, Anja, Klaus Schwarzburg, & Thomas Hannappel. (2015). Interface analysis on MOVPE grown InP–GaInAs–InP double heterostructures for application in infrared solar cells. Solar Energy Materials and Solar Cells. 148. 25–29. 6 indexed citations
10.
Dobrich, Anja, et al.. (2012). 水素プロセス環境におけるSi(100)上の異常な二層ステップの形成. Physical Review B. 86(19). 1–195310. 8 indexed citations
11.
Brückner, Sebastian, Enrique Barrigón, Oliver Supplie, et al.. (2012). Ge(100) surfaces prepared in vapor phase epitaxy process ambient. physica status solidi (RRL) - Rapid Research Letters. 6(4). 178–180. 6 indexed citations
12.
Brückner, Sebastian, Henning Döscher, Peter Kleinschmidt, et al.. (2012). Anomalous double-layer step formation on Si(100) in hydrogen process ambient. Physical Review B. 86(19). 37 indexed citations
13.
Brückner, Sebastian, Enrique Barrigón, Anja Dobrich, et al.. (2012). In situ control of Si(100) and Ge(100) surface preparation for the heteroepitaxy of III-V solar cell architectures. AIP conference proceedings. 1 indexed citations
14.
Schwarzburg, Klaus, et al.. (2011). Time resolved measurement of interface and bulk recombination of solar cell materials. 1–4.
15.
Dobrich, Anja, Peter Kleinschmidt, Henning Döscher, & Thomas Hannappel. (2011). Quantitative investigation of hydrogen bonds on Si(100) surfaces prepared by vapor phase epitaxy. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(4). 15 indexed citations
16.
Döscher, Henning, Anja Dobrich, Sebastian Brückner, Peter Kleinschmidt, & Thomas Hannappel. (2010). Si(100) surfaces in a hydrogen-based process ambient. Applied Physics Letters. 97(15). 151905–151905. 17 indexed citations
17.
Schulze, T. F., Caspar Leendertz, Anja Dobrich, et al.. (2010). Impact of a-Si:H structural properties on the annealing behavior of a-Si:H/c-Si heterostructures used as precursors for high-efficiency solar cells. MRS Proceedings. 1268. 1 indexed citations
18.
Schulze, T. F., et al.. (2010). Interplay of amorphous silicon disorder and hydrogen content with interface defects in amorphous/crystalline silicon heterojunctions. Applied Physics Letters. 96(25). 125 indexed citations
19.
Döscher, Henning, Sebastian Brückner, Anja Dobrich, et al.. (2010). Surface preparation of Si(100) by thermal oxide removal in a chemical vapor environment. Journal of Crystal Growth. 315(1). 10–15. 31 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Agnieszka Paszuk Breakdown of academic impact, for papers by J. Penaud Breakdown of academic impact, for papers by Naser Tajik Breakdown of academic impact, for papers by Marinus Fischer Breakdown of academic impact, for papers by M. Carroll Breakdown of academic impact, for papers by G. Weidner Breakdown of academic impact, for papers by P. Sana Breakdown of academic impact, for papers by P.D. Ye Breakdown of academic impact, for papers by Igor Krylov Breakdown of academic impact, for papers by Anyan Du
Rankless by CCL
2026