Kab-Jin Nam

667 total citations
8 papers, 149 citations indexed

About

Kab-Jin Nam is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Infectious Diseases. According to data from OpenAlex, Kab-Jin Nam has authored 8 papers receiving a total of 149 indexed citations (citations by other indexed papers that have themselves been cited), including 8 papers in Electrical and Electronic Engineering, 1 paper in Biomedical Engineering and 0 papers in Infectious Diseases. Recurrent topics in Kab-Jin Nam's work include Semiconductor materials and devices (8 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers) and Integrated Circuits and Semiconductor Failure Analysis (4 papers). Kab-Jin Nam is often cited by papers focused on Semiconductor materials and devices (8 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers) and Integrated Circuits and Semiconductor Failure Analysis (4 papers). Kab-Jin Nam collaborates with scholars based in South Korea. Kab-Jin Nam's co-authors include Sangwoo Pae, Lijie Zhang, Jung In Kim, Jongwoo Park, Changze Liu, Yoohwan Kim, Zhenhua Wu, T. Kauerauf, Eun-Sung Jung and Ho-Kyu Kang and has published in prestigious journals such as IEEE Transactions on Electron Devices and 2022 International Electron Devices Meeting (IEDM).

In The Last Decade

Kab-Jin Nam

7 papers receiving 145 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Kab-Jin Nam South Korea 5 145 22 16 6 3 8 149
Veeraraghavan Basker United States 6 180 1.2× 27 1.2× 10 0.6× 5 0.8× 2 0.7× 16 182
Jam-Wem Lee Taiwan 8 234 1.6× 14 0.6× 32 2.0× 4 0.7× 1 0.3× 26 237
JungChak Ahn South Korea 5 97 0.7× 18 0.8× 21 1.3× 2 0.3× 1 0.3× 13 120
Oliver von Sicard Germany 5 71 0.5× 35 1.6× 27 1.7× 5 0.8× 8 92
Christian Tückmantel Germany 3 49 0.3× 17 0.8× 26 1.6× 8 1.3× 4 59
Sresta Valasa India 12 271 1.9× 46 2.1× 22 1.4× 7 1.2× 32 284
Christian Russ Germany 15 470 3.2× 12 0.5× 28 1.8× 4 0.7× 42 481
K. Vaed United States 5 140 1.0× 17 0.8× 5 0.3× 2 0.3× 7 142
Olivier Bonnaud France 6 96 0.7× 20 0.9× 31 1.9× 2 0.3× 4 1.3× 42 114
Mong-Song Liang Taiwan 6 179 1.2× 34 1.5× 11 0.7× 12 2.0× 2 0.7× 14 180

Countries citing papers authored by Kab-Jin Nam

Since Specialization
Citations

This map shows the geographic impact of Kab-Jin Nam's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kab-Jin Nam with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kab-Jin Nam more than expected).

Fields of papers citing papers by Kab-Jin Nam

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kab-Jin Nam. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kab-Jin Nam. The network helps show where Kab-Jin Nam may publish in the future.

Co-authorship network of co-authors of Kab-Jin Nam

This figure shows the co-authorship network connecting the top 25 collaborators of Kab-Jin Nam. A scholar is included among the top collaborators of Kab-Jin Nam based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kab-Jin Nam. Kab-Jin Nam is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

8 of 8 papers shown
1.
Nam, Kab-Jin, Jungmin Park, Byoungdeog Choi, & Kee-Won Kwon. (2022). Charge Pumping Technique to Measure Polarization Switching Charges of FeFETs. IEEE Transactions on Electron Devices. 69(9). 5289–5296. 4 indexed citations
2.
Jung, Minhyun, Taeho Kim, Sang-Ho Lee, et al.. (2022). Design Guidelines of Thermally Stable Hafnia Ferroelectrics for the Fabrication of 3D Memory Devices. 2022 International Electron Devices Meeting (IEDM). 5.4.1–5.4.4. 9 indexed citations
3.
Nam, Kab-Jin, Sung-Il Park, T. Kauerauf, et al.. (2017). Investigation of hot carrier degradation in bulk FinFET. XT–6.1. 26 indexed citations
4.
Liu, Changze, Jung In Kim, Yoohwan Kim, et al.. (2016). Hot carrier reliability characterization in consideration of self-heating in FinFET technology. 2A–2. 61 indexed citations
5.
Toledano-Luque, M., Kab-Jin Nam, Seunghun Lee, et al.. (2016). Acceptor-like trap effect on negative-bias temperature instability (NBTI) of SiGe pMOSFETs on SRB. 31.2.1–31.2.4. 7 indexed citations
6.
Kim, Sang-Su, Dongkyu Lee, Kab-Jin Nam, et al.. (2013). A practical Si nanowire technology with nanowire-on-insulator structure for beyond 10nm logic technologies. 26.5.1–26.5.4. 40 indexed citations
7.
Hyun, Sangjin, Hye-Min Kim, Kab-Jin Nam, et al.. (2007). Improvement of Performance and Data Retention Characteristics of Sub-50nm DRAM by HfSiON Gate Dielectric. 184–185.
8.
Nam, Kab-Jin, S.H. Lee, Seok-Hun Hyun, et al.. (2007). Investigation of hot carrier effects in n-MOSFETs thick oxide with HfSiON and SiON gate dielectrics. 622–623. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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