V. Nathan

579 total citations
25 papers, 420 citations indexed

About

V. Nathan is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, V. Nathan has authored 25 papers receiving a total of 420 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 3 papers in Materials Chemistry. Recurrent topics in V. Nathan's work include Advanced Semiconductor Detectors and Materials (17 papers), Semiconductor Quantum Structures and Devices (15 papers) and Chalcogenide Semiconductor Thin Films (11 papers). V. Nathan is often cited by papers focused on Advanced Semiconductor Detectors and Materials (17 papers), Semiconductor Quantum Structures and Devices (15 papers) and Chalcogenide Semiconductor Thin Films (11 papers). V. Nathan collaborates with scholars based in United States and France. V. Nathan's co-authors include Naresh C. Das, B.-M. Nguyen, Gail J. Brown, M. Razeghi, C. H. Grein, Meimei Z. Tidrow, Manijeh Razeghi, S. Sivananthan, Yong Chang and David J. Smith and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Proceedings of the IEEE.

In The Last Decade

V. Nathan

25 papers receiving 394 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. Nathan United States 13 410 241 87 54 34 25 420
R. S. Hall United Kingdom 13 386 0.9× 220 0.9× 111 1.3× 74 1.4× 35 1.0× 22 433
C. A. Cockrum United States 11 449 1.1× 297 1.2× 129 1.5× 52 1.0× 29 0.9× 22 469
Anne M. Itsuno United States 9 362 0.9× 174 0.7× 51 0.6× 165 3.1× 76 2.2× 14 386
Krystian Michalczewski Poland 13 357 0.9× 254 1.1× 64 0.7× 72 1.3× 37 1.1× 56 382
Yingqiang Xu China 11 310 0.8× 215 0.9× 49 0.6× 48 0.9× 50 1.5× 62 344
G. Yu. Sidorov Russia 9 302 0.7× 207 0.9× 71 0.8× 72 1.3× 17 0.5× 75 320
I. V. Sabinina Russia 11 343 0.8× 216 0.9× 106 1.2× 50 0.9× 24 0.7× 50 373
Giacomo Badano France 13 301 0.7× 198 0.8× 110 1.3× 35 0.6× 47 1.4× 42 336
S. N. Nesmelov Russia 11 379 0.9× 280 1.2× 126 1.4× 59 1.1× 16 0.5× 71 393
J. Ellsworth United States 10 340 0.8× 188 0.8× 109 1.3× 28 0.5× 30 0.9× 18 351

Countries citing papers authored by V. Nathan

Since Specialization
Citations

This map shows the geographic impact of V. Nathan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Nathan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Nathan more than expected).

Fields of papers citing papers by V. Nathan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Nathan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Nathan. The network helps show where V. Nathan may publish in the future.

Co-authorship network of co-authors of V. Nathan

This figure shows the co-authorship network connecting the top 25 collaborators of V. Nathan. A scholar is included among the top collaborators of V. Nathan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Nathan. V. Nathan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Grein, C. H., Michael E. Flatté, A. Evans, et al.. (2012). Design of Phosphorus-Containing MWIR Type-II Superlattices for Infrared Photon Detectors. IEEE Journal of Selected Topics in Quantum Electronics. 19(5). 1–6. 6 indexed citations
2.
Razeghi, Manijeh, Darin Hoffman, B.-M. Nguyen, et al.. (2009). Recent Advances in LWIR Type-II InAs/GaSb Superlattice Photodetectors and Focal Plane Arrays at the Center for Quantum Devices. Proceedings of the IEEE. 97(6). 1056–1066. 25 indexed citations
3.
Nguyen, B.-M., M. Razeghi, V. Nathan, & Gail J. Brown. (2007). Type-II M structure photodiodes: an alternative material design for mid-wave to long wavelength infrared regimes. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6479. 64790S–64790S. 78 indexed citations
4.
Chang, Yong, Shekhar Guha, C. H. Grein, et al.. (2007). Absorption of Narrow-Gap HgCdTe Near the Band Edge Including Nonparabolicity and the Urbach Tail. Journal of Electronic Materials. 36(8). 1000–1006. 11 indexed citations
5.
Chang, Yong, C. H. Grein, S. Sivananthan, et al.. (2006). Narrow gap HgCdTe absorption behavior near the band edge including nonparabolicity and the Urbach tail. Applied Physics Letters. 89(6). 22 indexed citations
6.
Grein, C. H., et al.. (2005). Arsenic activation in molecular beam epitaxy grown, in situ doped HgCdTe(211). Applied Physics Letters. 86(21). 21 indexed citations
7.
Razeghi, Manijeh, Yajun Wei, Aaron Gin, et al.. (2005). High performance Type II InAs/GaSb superlattices for mid, long, and very long wavelength infrared focal plane arrays. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5783. 86–86. 16 indexed citations
8.
Johnson, S. M., M. F. Vilela, Jeffrey M. Peterson, et al.. (2004). HgCdTe/Si materials for long wavelength infrared detectors. Journal of Electronic Materials. 33(6). 526–530. 32 indexed citations
9.
Chang, Yong, et al.. (2004). Near-bandgap infrared absorption properties of HgCdTe. Journal of Electronic Materials. 33(6). 709–713. 16 indexed citations
10.
Garland, J. W., et al.. (2001). Improvement of the accuracy of the In-situ ellipsometric measurements of temperature and alloy composition for MBE grown HgCdTe LWIR/MWIR structures. Journal of Electronic Materials. 30(6). 637–642. 7 indexed citations
11.
Brill, G., et al.. (2000). In-situ control of temperature and alloy composition of Cd1−xZnxTe grown by molecular beam epitaxy. Journal of Electronic Materials. 29(6). 742–747. 5 indexed citations
12.
Rujirawat, Saroj, Yan Xin, Nigel D. Browning, et al.. (1999). CdTe(111)B grown on Si(111) by molecular beam epitaxy. Applied Physics Letters. 74(16). 2346–2348. 21 indexed citations
13.
Rujirawat, Saroj, David J. Smith, J. P. Faurie, et al.. (1998). Microstructural and optical characterization of CdTe(211)B/ZnTe/Si(211) grown by molecular beam epitaxy. Journal of Electronic Materials. 27(9). 1047–1052. 24 indexed citations
14.
Nathan, V.. (1994). Thermionic dark Current in GaAs/AlxGa1‐xAs Quantum Well Detectors. physica status solidi (b). 185(2). 1 indexed citations
15.
Das, Naresh C. & V. Nathan. (1993). Hot carrier induced interface trap annealing in silicon field effect transistors. Journal of Applied Physics. 74(12). 7596–7599. 8 indexed citations
16.
Nathan, V. & Naresh C. Das. (1993). Gate-induced drain leakage current in MOS devices. IEEE Transactions on Electron Devices. 40(10). 1888–1890. 31 indexed citations
17.
Das, Naresh C. & V. Nathan. (1993). Hot carrier degradation in MOSFETs: a charge pumping study. Semiconductor Science and Technology. 8(4). 549–554. 5 indexed citations
18.
Das, Naresh C., et al.. (1992). Radiation effects on gate induced drain leakage current in metal oxide semiconductor transistors. Journal of Applied Physics. 72(10). 4958–4962. 6 indexed citations
19.
Das, Naresh C., P. Duggan, & V. Nathan. (1992). Annealing characteristics of hot carrier induced damage inn-channel MOSFETs. International Journal of Electronics. 73(6). 1201–1213. 2 indexed citations
20.
Das, Naresh C., P. Duggan, & V. Nathan. (1992). Transconductance Technique for Measurement of Interface State Density and Oxide Charge in LDD-MOSFET's. physica status solidi (a). 133(1). 167–177. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by R. S. Hall Breakdown of academic impact, for papers by C. A. Cockrum Breakdown of academic impact, for papers by Anne M. Itsuno Breakdown of academic impact, for papers by Krystian Michalczewski Breakdown of academic impact, for papers by Yingqiang Xu Breakdown of academic impact, for papers by G. Yu. Sidorov Breakdown of academic impact, for papers by I. V. Sabinina Breakdown of academic impact, for papers by Giacomo Badano Breakdown of academic impact, for papers by S. N. Nesmelov Breakdown of academic impact, for papers by J. Ellsworth
Rankless by CCL
2026