J. E. Potts

1.5k total citations
44 papers, 1.1k citations indexed

About

J. E. Potts is a scholar working on Atomic and Molecular Physics, and Optics, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, J. E. Potts has authored 44 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Atomic and Molecular Physics, and Optics, 24 papers in Materials Chemistry and 23 papers in Electrical and Electronic Engineering. Recurrent topics in J. E. Potts's work include Semiconductor Quantum Structures and Devices (20 papers), Quantum Dots Synthesis And Properties (16 papers) and Chalcogenide Semiconductor Thin Films (15 papers). J. E. Potts is often cited by papers focused on Semiconductor Quantum Structures and Devices (20 papers), Quantum Dots Synthesis And Properties (16 papers) and Chalcogenide Semiconductor Thin Films (15 papers). J. E. Potts collaborates with scholars based in United States, Italy and France. J. E. Potts's co-authors include Hai‐Ping Cheng, J. M. DePuydt, M. A. Haase, T. L. Smith, Charles Walker, R. C. Hanson, S.K. Mohapatra, C. Schwab, G. I. Stegeman and B. Hillebrands and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

J. E. Potts

43 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. E. Potts United States 21 742 720 616 153 120 44 1.1k
J. Windscheif Germany 16 670 0.9× 636 0.9× 460 0.7× 62 0.4× 83 0.7× 31 1.1k
A. Axmann Germany 15 932 1.3× 583 0.8× 812 1.3× 249 1.6× 82 0.7× 35 1.3k
R. E. Thomson United States 13 396 0.5× 658 0.9× 515 0.8× 160 1.0× 165 1.4× 21 1.0k
Koh Era Japan 18 674 0.9× 642 0.9× 1.0k 1.7× 93 0.6× 113 0.9× 38 1.4k
W. Gehlhoff Germany 18 669 0.9× 619 0.9× 687 1.1× 83 0.5× 234 1.9× 117 1.2k
Arden Sher United States 14 524 0.7× 561 0.8× 384 0.6× 68 0.4× 82 0.7× 20 912
P. E. Freeland United States 18 661 0.9× 560 0.8× 566 0.9× 152 1.0× 120 1.0× 26 1.2k
H. Ch. Alt Germany 16 917 1.2× 691 1.0× 543 0.9× 74 0.5× 122 1.0× 67 1.2k
P. J. Lin‐Chung United States 20 554 0.7× 789 1.1× 412 0.7× 97 0.6× 166 1.4× 46 1.1k
A. N. Titkov Russia 18 742 1.0× 673 0.9× 589 1.0× 226 1.5× 107 0.9× 105 1.3k

Countries citing papers authored by J. E. Potts

Since Specialization
Citations

This map shows the geographic impact of J. E. Potts's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. E. Potts with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. E. Potts more than expected).

Fields of papers citing papers by J. E. Potts

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. E. Potts. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. E. Potts. The network helps show where J. E. Potts may publish in the future.

Co-authorship network of co-authors of J. E. Potts

This figure shows the co-authorship network connecting the top 25 collaborators of J. E. Potts. A scholar is included among the top collaborators of J. E. Potts based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. E. Potts. J. E. Potts is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Haase, M. A., J. M. DePuydt, Hai‐Ping Cheng, & J. E. Potts. (1991). Electromigration in p-type ZnSe:Li. Applied Physics Letters. 58(11). 1173–1174. 25 indexed citations
2.
Giapis, Konstantinos P., Klavs F. Jensen, J. E. Potts, & Steven J. Pachuta. (1990). Investigation of carbon incorporation in znse: Effects on morphology, electrical, and photoluminescence properties. Journal of Electronic Materials. 19(5). 453–462. 14 indexed citations
3.
Cheng, Hai‐Ping, J. M. DePuydt, M. A. Haase, & J. E. Potts. (1990). Molecular-beam epitaxy growth of ZnSe using a cracked selenium source. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 8(2). 181–186. 27 indexed citations
4.
Potts, J. E., Hai‐Ping Cheng, J. M. DePuydt, & M. A. Haase. (1990). p-Doping of epitaxial ZnSe using group I elements. Journal of Crystal Growth. 101(1-4). 425–429. 10 indexed citations
5.
Peyghambarian, N., et al.. (1988). Room-temperature excitonic optical nonlinearities of molecular beam epitaxially grown ZnSe thin films. Applied Physics Letters. 52(3). 182–184. 44 indexed citations
6.
Potts, J. E., T. L. Smith, Hai‐Ping Cheng, Baojun Yang, & Bruce W. Wessels. (1988). Electron-beam-pumped lasing in epitaxial ZnSe thin films. Journal of Crystal Growth. 86(1-4). 935–941. 4 indexed citations
7.
Cheng, Hai‐Ping, J. M. DePuydt, J. E. Potts, & T. L. Smith. (1988). Growth of p-type ZnSe:Li by molecular beam epitaxy. Applied Physics Letters. 52(2). 147–149. 93 indexed citations
8.
Potts, J. E., Hung-Hsiang Cheng, B. Fluegel, et al.. (1988). Excitonic Optical Nonlinearities In ZnSe Epitaxial Films. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 881. 107–107. 8 indexed citations
9.
DePuydt, J. M., T. L. Smith, J. E. Potts, Hai‐Ping Cheng, & S.K. Mohapatra. (1988). Detection and control of impurity incorporation in MBE-grown ZnSe. Journal of Crystal Growth. 86(1-4). 318–323. 25 indexed citations
10.
Cheng, Hai‐Ping, S.K. Mohapatra, J. E. Potts, & T. L. Smith. (1987). Effects of beam pressure ratios on film quality in MBE growth of ZnSe. Journal of Crystal Growth. 81(1-4). 512–517. 20 indexed citations
11.
Potts, J. E., T. L. Smith, & Hai‐Ping Cheng. (1987). Electron beam pumped lasing in ZnSe grown by molecular beam epitaxy. Applied Physics Letters. 50(1). 7–9. 28 indexed citations
12.
Potts, J. E., Hai‐Ping Cheng, S.K. Mohapatra, & T. L. Smith. (1987). Effect of elastic strain on the energy band gap in heteroepitaxially grown ZnSe. Journal of Applied Physics. 61(1). 333–336. 41 indexed citations
13.
DePuydt, J. M., Hai‐Ping Cheng, J. E. Potts, T. L. Smith, & S.K. Mohapatra. (1987). Growth of undoped ZnSe on (100) GaAs by molecular-beam epitaxy: An investigation of the effects of growth temperature and beam pressure ratio. Journal of Applied Physics. 62(12). 4756–4762. 71 indexed citations
14.
Potts, J. E., et al.. (1987). Photoluminescence Studies Of Donors In MBE-Grown ZnSe. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 794. 27–27. 2 indexed citations
15.
Perry, Thomas A., J. E. Potts, R. Merlín, G. A. Prinz, & E. M. Swiggard. (1985). Space-charge layers in semi-insulating GaAs: Photoexcited two-dimensional electron systems. Superlattices and Microstructures. 1(2). 97–99. 3 indexed citations
16.
Potts, J. E., R. Merlín, & D. L. Partin. (1983). Roughness-induced Raman scattering from surface carbon on PbTe. Physical review. B, Condensed matter. 27(6). 3905–3908. 24 indexed citations
17.
Shand, M. L., H. D. Hochheimer, M. Krauzman, et al.. (1976). Experimental and theoretical study of the anomalous Raman spectrum in the transverse optic phonon region of CuCl. Physical review. B, Solid state. 14(10). 4637–4646. 28 indexed citations
18.
Potts, J. E., R. C. Hanson, Charles Walker, & C. Schwab. (1974). Temperature dependence of the Raman scattering from CuCl. Physical review. B, Solid state. 9(6). 2711–2716. 45 indexed citations
19.
Potts, J. E., et al.. (1973). Temperature Dependence of Second-Order Raman Scattering in Potassium and Rubidium Halides. Physical review. B, Solid state. 8(6). 2756–2771. 25 indexed citations
20.
Potts, J. E. & L. B. Welsh. (1972). Experimental Study of the Host NMR Linewidth and Spin-Lattice Relaxation Rate in DiluteCuFeAlloys below the Kondo Temperature. Physical review. B, Solid state. 5(9). 3421–3441. 17 indexed citations

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