B. Prévot

1.2k total citations
59 papers, 950 citations indexed

About

B. Prévot is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, B. Prévot has authored 59 papers receiving a total of 950 indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Electrical and Electronic Engineering, 38 papers in Materials Chemistry and 16 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in B. Prévot's work include Silicon Nanostructures and Photoluminescence (20 papers), Silicon and Solar Cell Technologies (15 papers) and Thin-Film Transistor Technologies (15 papers). B. Prévot is often cited by papers focused on Silicon Nanostructures and Photoluminescence (20 papers), Silicon and Solar Cell Technologies (15 papers) and Thin-Film Transistor Technologies (15 papers). B. Prévot collaborates with scholars based in France, Germany and Belgium. B. Prévot's co-authors include C. Carabatos, C. Schwab, B. Hennion, B. Dörner, M. Sieskind, É. Fogarassy, F. Moussa, S. de Unamuno, R. M. Pick and M. Krauzman and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

B. Prévot

59 papers receiving 914 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Prévot France 18 591 416 320 149 130 59 950
M.C. Carmo Portugal 18 670 1.1× 513 1.2× 321 1.0× 130 0.9× 66 0.5× 80 905
J. B. Renucci France 20 670 1.1× 772 1.9× 746 2.3× 86 0.6× 91 0.7× 32 1.3k
G.J. Adriaenssens Belgium 18 745 1.3× 824 2.0× 167 0.5× 82 0.6× 58 0.4× 72 1.2k
J. P. Goss United Kingdom 19 963 1.6× 691 1.7× 347 1.1× 153 1.0× 91 0.7× 44 1.2k
W. Pałosz United States 16 602 1.0× 408 1.0× 289 0.9× 81 0.5× 31 0.2× 80 888
J. M. Perz Canada 15 402 0.7× 327 0.8× 250 0.8× 129 0.9× 28 0.2× 69 750
J. E. Potts United States 21 616 1.0× 742 1.8× 720 2.3× 120 0.8× 38 0.3× 44 1.1k
Etienne Talbot France 15 478 0.8× 211 0.5× 348 1.1× 75 0.5× 90 0.7× 57 842
S. Moehlecke Brazil 18 481 0.8× 240 0.6× 294 0.9× 172 1.2× 31 0.2× 50 987
V. Richter Israel 19 946 1.6× 463 1.1× 204 0.6× 62 0.4× 410 3.2× 58 1.2k

Countries citing papers authored by B. Prévot

Since Specialization
Citations

This map shows the geographic impact of B. Prévot's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Prévot with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Prévot more than expected).

Fields of papers citing papers by B. Prévot

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Prévot. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Prévot. The network helps show where B. Prévot may publish in the future.

Co-authorship network of co-authors of B. Prévot

This figure shows the co-authorship network connecting the top 25 collaborators of B. Prévot. A scholar is included among the top collaborators of B. Prévot based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Prévot. B. Prévot is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Rey, Soo‐Chang, F. Antoni, B. Prévot, et al.. (2000). Thermal stability of amorphous carbon films deposited by pulsed laser ablation. Applied Physics A. 71(4). 433–439. 25 indexed citations
3.
Tiginyanu, I. M., V. V. Ursaki, Y. S. Raptis, et al.. (1999). Raman Modes in Porous GaP under Hydrostatic Pressure. physica status solidi (b). 211(1). 281–286. 7 indexed citations
4.
Tiginyanu, I. M., C. Schwab, J.J. Grob, et al.. (1997). Ion implantation as a tool for controlling the morphology of porous gallium phosphide. Applied Physics Letters. 71(26). 3829–3831. 30 indexed citations
5.
Kántor, Zoltán, É. Fogarassy, A. Grob, et al.. (1997). Evolution of implanted carbon in silicon upon pulsed excimer laser annealing: epitaxial Si1−yCy alloy formation and SiC precipitation. Applied Surface Science. 109-110. 305–311. 6 indexed citations
6.
Unamuno, S. de, B. Prévot, Otfried Müller, & P. Dhamelincourt. (1996). Surface Morphology and Structural Modifications of Si Targets Submitted to Intense Pulsed-Laser Irradiations. physica status solidi (a). 158(2). 385–396. 9 indexed citations
7.
Kuźnicki, Z.T., J.J. Grob, & B. Prévot. (1996). Implanted buried layers and interfaces: Application in the new area of very- and ultra-high efficiency solar cells. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 112(1-4). 188–191. 2 indexed citations
8.
Antoni, F., É. Fogarassy, C. Fuchs, B. Prévot, & J.P. Stoquert. (1995). Si1−xGex thin films deposited by the pulsed excimer laser ablation technique. Applied Surface Science. 86(1-4). 175–179. 2 indexed citations
9.
Antoni, F., É. Fogarassy, C. Fuchs, et al.. (1995). Pulsed excimer laser deposition of Si1−xGex thin films. Applied Physics Letters. 67(14). 2072–2074. 12 indexed citations
10.
Fogarassy, É., Didier Dentel, Jean‐Jacques Grob, et al.. (1994). Si. I-x-y. GexCy Film Formation by Pulsed Excimer Laser Crystallization of Heavily Ge and C Implanted Silicon. MRS Proceedings. 354. 3 indexed citations
11.
Boudart, B., Bernabé Marí Soucase, & B. Prévot. (1993). Raman investigation of the photocarrier properties in both undoped and Fe-doped InP substrates. Materials Science and Engineering B. 20(1-2). 109–112. 1 indexed citations
12.
Boudart, B., Bernard Mari, B. Prévot, & C. Schwab. (1992). Efficiency of neutron transmutation doping of InP investigated by optical and electrical methods. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 63(1-2). 101–105. 9 indexed citations
13.
Prévot, B., et al.. (1990). Silicon implantation of GaAs at low and medium doses: Raman assessment of the dopant activation. Materials Science and Engineering B. 5(2). 269–273. 1 indexed citations
14.
Fogarassy, É., J.P. Stoquert, C. Fuchs, et al.. (1990). Pulsed excimer and Nd:YAG laser crystallization of a-Si:H. Applied Surface Science. 46(1-4). 378–382. 10 indexed citations
15.
Prévot, B., et al.. (1988). Raman Determination of the Faust‐Henry Coefficient of GaAs in the 1.9 to 2.7 eV Range at Ordinary and Low Temperatures. physica status solidi (b). 150(1). 65–72. 8 indexed citations
16.
Gargouri, M., B. Prévot, & C. Schwab. (1987). Raman scattering evaluation of lattice damage and electrical activity in Be-implanted GaAs. Journal of Applied Physics. 62(9). 3902–3911. 33 indexed citations
17.
Prévot, B., et al.. (1983). First-order Raman line intensity ratio in GaAs: a potential lattice perfection scale. Journal of Physics C Solid State Physics. 16(6). 1135–1142. 39 indexed citations
18.
Prévot, B., et al.. (1980). Infrared lattice vibrations and dielectric dispersion in HgI2. Infrared Physics. 20(2). 99–106. 10 indexed citations
19.
Prévot, B., et al.. (1979). Raman scattering in red mercury iodide. New improved polarization spectra. physica status solidi (b). 95(2). 601–606. 11 indexed citations
20.
Prévot, B., C. Carabatos, C. Schwab, B. Hennion, & F. Moussa. (1973). Normal modes of vibrations in CuBr. Solid State Communications. 13(10). 1725–1727. 34 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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