B. Prévot

1.2k citations

59 papers · 950 indexed · h-index 18

Materials Chemistry top 10%
- Silicon Nanostructures and Photoluminescence 20
- Solid-state spectroscopy and crystallography 9
Atomic and Molecular Physics, and Optics top 10%
Condensed Matter Physics top 10%
Geophysics top 10%
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
- Silicon and Solar Cell Technologies 15
- Thin-Film Transistor Technologies 15
- Semiconductor materials and devices 14
Computational Mechanics
- Laser Material Processing Techniques 8
- Ion-surface interactions and analysis 6
Mechanics of Materials
- Laser-induced spectroscopy and plasma 6

Co-authors: C. Carabatos C. Schwab B. Hennion B. Dörner M. Sieskind É. Fogarassy F. Moussa S. de Unamuno
Cited by: Materials Chemistry Atomic and Molecular Physics, and Optics Condensed Matter Physics
Journals: Applied Surface Science (8 papers)physica status solidi (b) (7 papers)Applied Physics Letters (5 papers)
Partner nations: France Germany Belgium

In The Last Decade

B. Prévot

59 papers receiving 914 citations

Peers

Countries citing papers authored by B. Prévot

Since Specialization

Citations

This map shows the geographic impact of B. Prévot's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Prévot with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Prévot more than expected).

Fields of papers citing papers by B. Prévot

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Prévot. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Prévot. The network helps show where B. Prévot may publish in the future.

Co-authorship network

The 25 scholars most cited alongside B. Prévot, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. Prévot Line = papers co-authored together B. Prévot links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Long-Pulse Duration Excimer Laser Processing in the Fabrication of High Performance Polysilicon TFTs for Large Area Electronics MRS Proceedings ·É. Fogarassy,B. Prévot,S. de Unamuno,Р.М. Максакова,Amada O. Iglesias Fernández,R. Fialla,Tayeb Mohammed‐Brahim	2001	2
2	Thermal stability of amorphous carbon films deposited by pulsed laser ablation Applied Physics A ·Soo‐Chang Rey,F. Antoni,B. Prévot,É. Fogarassy,Jean‐Charles Arnault,J. Hommet,F. Le Normand,Pierre Boher	2000	25
3	Raman Modes in Porous GaP under Hydrostatic Pressure physica status solidi (b) ·I. M. Tiginyanu,V. V. Ursaki,Y. S. Raptis,Yves Roullière,E. Anastassakis,H.L. Hartnagel,A. Vogt,B. Prévot,C. Schwab	1999	7
4	Evolution of implanted carbon in silicon upon pulsed excimer laser annealing: epitaxial Si1−yCy alloy formation and SiC precipitation Applied Surface Science ·Zoltán Kántor,É. Fogarassy,A. Grob,Jean‐Jacques Grob,D. Müller,B. Prévot,R. Stuck	1997	6
5	Ion implantation as a tool for controlling the morphology of porous gallium phosphide Applied Physics Letters ·I. M. Tiginyanu,C. Schwab,J.J. Grob,B. Prévot,H.L. Hartnagel,A. Vogt,G. Irmer,J. Monecke	1997	30
6	Implanted buried layers and interfaces: Application in the new area of very- and ultra-high efficiency solar cells Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Z.T. Kuźnicki,J.J. Grob,B. Prévot	1996	2
7	Surface Morphology and Structural Modifications of Si Targets Submitted to Intense Pulsed-Laser Irradiations physica status solidi (a) ·S. de Unamuno,B. Prévot,Otfried Müller,P. Dhamelincourt	1996	9
8	Si1−xGex thin films deposited by the pulsed excimer laser ablation technique Applied Surface Science ·F. Antoni,É. Fogarassy,C. Fuchs,B. Prévot,J.P. Stoquert	1995	2
9	Pulsed excimer laser deposition of Si1−xGex thin films Applied Physics Letters ·F. Antoni,É. Fogarassy,C. Fuchs,J.J. Grob,B. Prévot,J.P. Stoquert	1995	12
10	Si. _I-x-y. Ge_xCy Film Formation by Pulsed Excimer Laser Crystallization of Heavily Ge and C Implanted Silicon MRS Proceedings ·É. Fogarassy,Didier Dentel,Jean‐Jacques Grob,B. Prévot,J.P. Stoquert,R. Stuck	1994	3
11	Laser-induced modifications in a-C:H thin films Applied Surface Science ·J. Spousta,J. Perrière,Adèle D. Laurent,É. Fogarassy,B. Prévot,S. de Unamuno	1993	8
12	Efficiency of neutron transmutation doping of InP investigated by optical and electrical methods Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·B. Boudart,Bernard Mari,B. Prévot,C. Schwab	1992	9
13	Silicon implantation of GaAs at low and medium doses: Raman assessment of the dopant activation Materials Science and Engineering B ·Kvlividze Vi,B. Prévot,C. Schwab	1990	1
14	Pulsed excimer and Nd:YAG laser crystallization of a-Si:H Applied Surface Science ·Mineaki Ii,É. Fogarassy,J.P. Stoquert,C. Fuchs,S. de Unamuno,B. Prévot,H. Pattyn	1990	10
15	Raman Determination of the Faust‐Henry Coefficient of GaAs in the 1.9 to 2.7 eV Range at Ordinary and Low Temperatures physica status solidi (b) ·Kvlividze Vi,B. Prévot,C. Schwab	1988	8
16	Raman scattering evaluation of lattice damage and electrical activity in Be-implanted GaAs Journal of Applied Physics ·M. Gargouri,B. Prévot,C. Schwab	1987	33
17	First-order Raman line intensity ratio in GaAs: a potential lattice perfection scale Journal of Physics C Solid State Physics ·Susan Jin Kim,B. Prévot,C. Schwab	1983	39
18	Infrared lattice vibrations and dielectric dispersion in HgI2 Infrared Physics ·Susan Jin Kim,B. Prévot	1980	10
19	Raman scattering in red mercury iodide. New improved polarization spectra physica status solidi (b) ·B. Prévot,Susan Jin Kim	1979	11
20	Normal modes of vibrations in CuBr Solid State Communications ·B. Prévot,C. Carabatos,C. Schwab,B. Hennion,F. Moussa	1973	34

About B. Prévot

B. Prévot is a scholar working on Materials Chemistry, Electrical and Electronic Engineering, Computational Mechanics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials, having authored 59 papers that have together received 950 indexed citations. Recurring topics across this work include Silicon Nanostructures and Photoluminescence (20 papers), Silicon and Solar Cell Technologies (15 papers), Thin-Film Transistor Technologies (15 papers), Semiconductor materials and devices (14 papers), Solid-state spectroscopy and crystallography (9 papers), Laser Material Processing Techniques (8 papers), Ion-surface interactions and analysis (6 papers) and Laser-induced spectroscopy and plasma (6 papers). The work is most often cited by research in Materials Chemistry (591 citations), Atomic and Molecular Physics, and Optics (320 citations), Condensed Matter Physics (117 citations), Geophysics (120 citations) and Electronic, Optical and Magnetic Materials (149 citations). B. Prévot has collaborated with scholars based in France, Germany and Belgium. Frequent co-authors include C. Carabatos, C. Schwab, B. Hennion, B. Dörner, M. Sieskind, É. Fogarassy, F. Moussa, S. de Unamuno, R. M. Pick and M. Krauzman. Their work appears in journals such as Applied Surface Science, physica status solidi (b), Applied Physics Letters, Thin Solid Films and Applied Physics A.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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