E. M. Swiggard

706 total citations
26 papers, 585 citations indexed

About

E. M. Swiggard is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, E. M. Swiggard has authored 26 papers receiving a total of 585 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Atomic and Molecular Physics, and Optics, 16 papers in Electrical and Electronic Engineering and 5 papers in Materials Chemistry. Recurrent topics in E. M. Swiggard's work include Semiconductor Quantum Structures and Devices (10 papers), Semiconductor materials and interfaces (7 papers) and Semiconductor materials and devices (7 papers). E. M. Swiggard is often cited by papers focused on Semiconductor Quantum Structures and Devices (10 papers), Semiconductor materials and interfaces (7 papers) and Semiconductor materials and devices (7 papers). E. M. Swiggard collaborates with scholars based in United States. E. M. Swiggard's co-authors include Raleigh Gilchrist, R.L. Henry, R. A. Hein, S. G. Bishop, W. J. Moore, G. H. Stauss, J. J. Krebs, P. B. Klein, B. V. Shanabrook and G. Scilla and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

E. M. Swiggard

25 papers receiving 514 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
E. M. Swiggard United States	15	324	314	254	61	60	26	585
Isaaki Yokota Japan	11	423 1.3×	350 1.1×	261 1.0×	49 0.8×	77 1.3×	29	721
Yoshinori Hayafuji Japan	12	255 0.8×	367 1.2×	170 0.7×	56 0.9×	70 1.2×	31	538
Sumiaki Ibuki Japan	17	605 1.9×	472 1.5×	237 0.9×	53 0.9×	127 2.1×	50	832
B. Adolph Germany	11	482 1.5×	385 1.2×	364 1.4×	78 1.3×	144 2.4×	16	856
Uichi Itoh Japan	11	273 0.8×	332 1.1×	188 0.7×	63 1.0×	33 0.6×	39	593
Seongbok Lee United States	13	504 1.6×	132 0.4×	260 1.0×	54 0.9×	45 0.8×	16	742
W. D. Ohlsen United States	12	334 1.0×	259 0.8×	131 0.5×	26 0.4×	37 0.6×	30	504
E. F. Dearborn United States	13	482 1.5×	324 1.0×	228 0.9×	66 1.1×	101 1.7×	15	648
T. W. Orent United States	11	343 1.1×	156 0.5×	184 0.7×	50 0.8×	19 0.3×	17	499
Michihide Kitamura Japan	15	319 1.0×	181 0.6×	207 0.8×	50 0.8×	151 2.5×	58	587

Countries citing papers authored by E. M. Swiggard

Since Specialization

Citations

This map shows the geographic impact of E. M. Swiggard's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. M. Swiggard with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. M. Swiggard more than expected).

Fields of papers citing papers by E. M. Swiggard

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. M. Swiggard. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. M. Swiggard. The network helps show where E. M. Swiggard may publish in the future.

Co-authorship network of co-authors of E. M. Swiggard

This figure shows the co-authorship network connecting the top 25 collaborators of E. M. Swiggard. A scholar is included among the top collaborators of E. M. Swiggard based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. M. Swiggard. E. M. Swiggard is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Sargent, L.J., et al.. (1990). Characterization and mapping of semi-insulating GaAs crystals grown by vertical zone melting and by vertical zone refining. Journal of Crystal Growth. 103(1-4). 323–329. 2 indexed citations

Sargent, L.J., et al.. (1990). Properties of semi-insulating GaAs grown by a vertical molten zone method. Journal of Applied Physics. 67(2). 852–858. 2 indexed citations

Swiggard, E. M.. (1989). Liquid encapsulated vertical zone melt (VZM) growth of GaAs crystals. Journal of Crystal Growth. 94(2). 556–558. 16 indexed citations

Blakemore, J. S., et al.. (1989). Assessment of the ionized EL2 fraction in semi-insulating GaAs. Applied Physics Letters. 54(21). 2106–2108. 17 indexed citations

Henry, R.L., et al.. (1987). Thin film growth of YBa2Cu3Ox from nitrate solutions. Journal of Crystal Growth. 85(4). 615–618. 19 indexed citations

Perry, Thomas A., J. E. Potts, R. Merlín, G. A. Prinz, & E. M. Swiggard. (1985). Space-charge layers in semi-insulating GaAs: Photoexcited two-dimensional electron systems. Superlattices and Microstructures. 1(2). 97–99. 3 indexed citations

Dietrich, H.B., et al.. (1981). Low noise ion-implanted InP FET's. IEEE Transactions on Electron Devices. 28(9). 1031–1034. 9 indexed citations

Stauss, G. H., et al.. (1980). New EPR data and photoinduced changes in GaAs: Cr. Reinterpretation of the "second-acceptor" state asCr4+. Physical review. B, Condensed matter. 22(7). 3141–3143. 37 indexed citations

Stauss, G. H., et al.. (1979). EPR determination of the concentration of chromium charge states in semi-insulating GaAs : Cr. Journal of Applied Physics. 50(10). 6251–6252. 19 indexed citations

10.

Henry, R.L., et al.. (1977). Precipitates in Fe-doped InP. Materials Research Bulletin. 12(6). 651–655. 18 indexed citations

11.

Swiggard, E. M., et al.. (1976). Research on Gunn Effect Materials (III-V Compounds). 1 indexed citations

12.

Nordquist, P. E. R., et al.. (1976). Liquid phase epitaxial growth of gallium arsenide on an etched substrate. Materials Research Bulletin. 11(8). 939–945. 5 indexed citations

13.

Bishop, S. G., W. J. Moore, & E. M. Swiggard. (1970). OPTICALLY PUMPED Cd3P2 LASER. Applied Physics Letters. 16(11). 459–461. 25 indexed citations

14.

Hein, R. A. & E. M. Swiggard. (1970). Superconductivity in TlBiTe2: A Low Carrier Density (III-V)VI2Compound. Physical Review Letters. 24(2). 53–55. 46 indexed citations

15.

Bishop, S. G., Walter J. Moore, & E. M. Swiggard. (1969). Photoconductivity in Cd3P2. Solid State Communications. 7(11). xi–xii. 2 indexed citations

16.

Bishop, S. G., W. J. Moore, & E. M. Swiggard. (1969). PHOTOLUMINESCENCE AND STIMULATED EMISSION IN Cd3P2. Applied Physics Letters. 15(1). 12–14. 19 indexed citations

17.

Wagner, R. J., E. D. Palik, & E. M. Swiggard. (1969). Interband magnetoabsorption in CdxZn3−xAs2. Physics Letters A. 30(3). 175–176. 7 indexed citations

18.

Swiggard, E. M.. (1967). Liquid Encapsulation Zone Refining (LEZOR). Journal of The Electrochemical Society. 114(9). 976–976. 9 indexed citations

19.

Swiggard, E. M., et al.. (1966). Preparation of Doped Germanium for Far Infrared Detectors. Journal of The Electrochemical Society. 113(1). 92–92. 1 indexed citations

20.

Moore, W. J., et al.. (1964). Infrared Photoconductive Characteristics of Boron-Doped Germanium. Journal of Applied Physics. 35(10). 2965–2970. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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