T. Bitzer

587 total citations
25 papers, 508 citations indexed

About

T. Bitzer is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films. According to data from OpenAlex, T. Bitzer has authored 25 papers receiving a total of 508 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 12 papers in Atomic and Molecular Physics, and Optics and 11 papers in Surfaces, Coatings and Films. Recurrent topics in T. Bitzer's work include Semiconductor materials and devices (17 papers), Electron and X-Ray Spectroscopy Techniques (11 papers) and Advanced Chemical Physics Studies (6 papers). T. Bitzer is often cited by papers focused on Semiconductor materials and devices (17 papers), Electron and X-Ray Spectroscopy Techniques (11 papers) and Advanced Chemical Physics Studies (6 papers). T. Bitzer collaborates with scholars based in United Kingdom, Germany and Russia. T. Bitzer's co-authors include N.V. Richardson, H. J. Lewerenz, N.V. Richardson, K. Jacobi, M. Gruyters, David J. Schiffrin, Th. Dittrich, Neville V. Richardson, Qiao Chen and H. Flietner and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and The Journal of Physical Chemistry B.

In The Last Decade

T. Bitzer

24 papers receiving 478 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Bitzer United Kingdom 15 400 271 266 135 47 25 508
Makoto Ashino Japan 12 137 0.3× 228 0.8× 305 1.1× 134 1.0× 14 0.3× 24 435
Luís M. Fortes Portugal 12 181 0.5× 244 0.9× 158 0.6× 63 0.5× 30 0.6× 19 388
E. Goiri Spain 10 290 0.7× 200 0.7× 201 0.8× 219 1.6× 16 0.3× 13 437
M. Y. Yen United States 12 215 0.5× 194 0.7× 235 0.9× 59 0.4× 41 0.9× 17 401
Afaf El‐Sayed Spain 9 308 0.8× 222 0.8× 168 0.6× 202 1.5× 11 0.2× 22 451
Paul W. Loscutoff United States 6 335 0.8× 195 0.7× 114 0.4× 120 0.9× 20 0.4× 6 406
J. D. Grange United Kingdom 9 296 0.7× 88 0.3× 168 0.6× 99 0.7× 76 1.6× 15 399
Christian Schoenenberger Switzerland 6 429 1.1× 205 0.8× 203 0.8× 174 1.3× 50 1.1× 11 505
Paul Frank Austria 10 314 0.8× 201 0.7× 166 0.6× 103 0.8× 22 0.5× 11 441
M. Leibovitch Israel 15 423 1.1× 276 1.0× 268 1.0× 53 0.4× 30 0.6× 32 554

Countries citing papers authored by T. Bitzer

Since Specialization
Citations

This map shows the geographic impact of T. Bitzer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Bitzer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Bitzer more than expected).

Fields of papers citing papers by T. Bitzer

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Bitzer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Bitzer. The network helps show where T. Bitzer may publish in the future.

Co-authorship network of co-authors of T. Bitzer

This figure shows the co-authorship network connecting the top 25 collaborators of T. Bitzer. A scholar is included among the top collaborators of T. Bitzer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Bitzer. T. Bitzer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Chen, Qiao, et al.. (2003). Growth of PTCDA crystals on H:Si(111) surfaces. Surface Science. 547(3). 385–393. 21 indexed citations
3.
Hofer, Werner A., et al.. (2002). Tuning in on single molecular states: adsorption sites and STM images of maleic anhydride on Si(1 0 0). Chemical Physics Letters. 355(3-4). 347–354. 18 indexed citations
4.
Dittrich, Th., et al.. (2002). Non-radiative recombination at reconstructed Si surfaces. Solid-State Electronics. 46(11). 1863–1872. 5 indexed citations
5.
Dittrich, Th., T. Bitzer, Neville V. Richardson, et al.. (2001). Defect transformation under growth of submonolayer oxides on silicon surfaces at low temperatures. Microelectronic Engineering. 59(1-4). 399–404. 2 indexed citations
6.
Heller, T., et al.. (2001). The influence of sodium on the adsorption of water on SrTiO3()-1×1 surfaces. Surface Science. 494(3). L811–L814. 13 indexed citations
7.
Bitzer, T., et al.. (2001). Inhibition of the [2+2] Cycloaddition:  Maleic Anhydride on Si(100)-2×1. The Journal of Physical Chemistry B. 105(20). 4535–4537. 25 indexed citations
8.
Bitzer, T., et al.. (2000). Sodium-induced ordering of the benzoate species on Si(100)-2×1: a combined HREELS, XPS and NEXAFS study. Surface Science. 458(1-3). 173–184. 12 indexed citations
9.
Bitzer, T., et al.. (2000). The electronic properties at the maleic anhydride/Si(1 0 0)-2×1 interface. Chemical Physics Letters. 331(5-6). 433–438. 9 indexed citations
10.
Bitzer, T. & Neville V. Richardson. (1999). The influence of coadsorbed sodium atoms on the chemisorption of benzoic acid on Si(100)-2×1. Surface Science. 427-428. 369–373. 19 indexed citations
11.
Bitzer, T. & N.V. Richardson. (1999). Route for controlled growth of ultrathin polyimide films with Si–C bonding to Si(100)-2×1. Applied Surface Science. 144-145. 339–343. 34 indexed citations
12.
13.
Bitzer, T. & N.V. Richardson. (1997). Demonstration of an imide coupling reaction on a Si(100)-2×1 surface by molecular layer deposition. Applied Physics Letters. 71(5). 662–664. 42 indexed citations
14.
Bitzer, T., et al.. (1996). An HREELS investigation of the adsorption of benzoic acid and aniline on Si(100)-2 × 1. Surface Science. 368(1-3). 202–207. 72 indexed citations
15.
Pemble, Martyn E., Nisha Shukla, A. Robert Turner, et al.. (1995). Reflectance anisotropy from non-III–V systems: Si and SiGe growth on (001) Si and adsorbate-induced reconstruction of Cu(110). physica status solidi (a). 152(1). 61–70. 8 indexed citations
16.
Dittrich, Th., Stefan Rauscher, T. Bitzer, et al.. (1995). Electronic Properties of n‐Si(111) during Electrochemical Surface Transformation toward H‐Termination. Journal of The Electrochemical Society. 142(7). 2411–2413. 17 indexed citations
17.
Bitzer, T., H. J. Lewerenz, M. Gruyters, & K. Jacobi. (1993). Influence of pH in electrolytic hydrogen termination of silicon. Journal of Electroanalytical Chemistry. 359(1-2). 287–292. 7 indexed citations
18.
Bitzer, T., M. Gruyters, H. J. Lewerenz, & K. Jacobi. (1993). Electrochemically prepared Si(111) 1×1-H surface. Applied Physics Letters. 63(3). 397–399. 26 indexed citations
19.
Lewerenz, H. J. & T. Bitzer. (1992). Electrolytic Hydrogenation of Silicon. Journal of The Electrochemical Society. 139(2). L21–L23. 32 indexed citations
20.
Bitzer, T. & H. J. Lewerenz. (1992). In situ preparation of hydrogen-terminated silicon single-crystal surfaces. Surface Science. 269-270. 886–892. 30 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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