I. Périchaud

974 citations

54 papers · 725 indexed · h-index 14

Impact in

Electrical and Electronic Engineering top 10%
- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 50
- Silicon and Solar Cell Technologies 48
- Thin-Film Transistor Technologies 38
- Integrated Circuits and Semiconductor Failure Analysis 9
Atomic and Molecular Physics, and Optics 26
- Semiconductor materials and interfaces 25

Co-authors: S. Martinuzzi Scott A. McHugo Mathieu Halbwax A. C. Thompson V. Vervisch T. Sarnet Frank Torregrosa M. Sentís
Journals: Solar Energy Materials and Solar Cells (7 papers)Materials Science and Engineering B (5 papers)Applied Physics Letters (3 papers)Journal of Applied Physics (3 papers)Thin Solid Films (1 paper)
Partner nations: France Germany Belgium

In The Last Decade

I. Périchaud

52 papers receiving 695 citations

Peers

Countries citing papers authored by I. Périchaud

Since Specialization

Citations

This map shows the geographic impact of I. Périchaud's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. Périchaud with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. Périchaud more than expected).

Fields of papers citing papers by I. Périchaud

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. Périchaud. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. Périchaud. The network helps show where I. Périchaud may publish in the future.

Co-authorship network

The 25 scholars most cited alongside I. Périchaud, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with I. Périchaud Line = papers co-authored together I. Périchaud links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A method to relate the presence of structural defects and impurities and their impact on the electrical activity in silicon for photovoltaic applications Solar Energy Materials and Solar Cells ·香代子水野, Mário Pascoal Nhanombe, G. Regula, I. Périchaud, G. Reinhart, M. Lundberg, Lasse Vines, Mathieu G. Silly, G Duncan Finlay, Laurent Barrallier, É. Pihan, Nathalie Mangelinck‐Noël	2025	0
2	Crystal distortions and structural defects at several scales generated during the growth of silicon contaminated with carbon Acta Materialia ·Mário Pascoal Nhanombe, G. Regula, G. Reinhart, I. Périchaud, G Duncan Finlay, Laurent Barrallier, J. Baruchel, Vegard Slåen Sæther, Nathalie Mangelinck‐Noël	2023	4
3	Dislocation Dynamics in Monocrystalline Si near the Melting Point Studied in Situ by X‐Ray Bragg Diffraction Imaging physica status solidi (b) ·李宪隆, M. Becker, Mário Pascoal Nhanombe, I. Périchaud, G. Reinhart, Nathalie Mangelinck‐Noël, G. Regula	2022	2
4	X-ray Based in Situ Investigation of Silicon Growth Mechanism Dynamics—Application to Grain and Defect Formation Crystals ·Mário Pascoal Nhanombe, M. Becker, Mary L. Weiss, M.G. Tsoutsouva, 千純曽木, G. Regula, G. Reinhart, I. Périchaud, G Duncan Finlay, Laurent Barrallier, 徐恩立, Alexander Rack, Elodie Boller, J. Baruchel, Nathalie Mangelinck‐Noël	2020	6
5	CARACTERISATIONS DES MATERIAUX ET DES DISPOSITIFS POUR LE PHOTOVOLTAIQUE HAL (Le Centre pour la Communication Scientifique Directe) ·Damien Barakel, Ludovic Escoubas, F. Flory, Judikaël Le Rouzo, Laurent Ottaviani, Francesco Panebianco, Olivier Palais, M. Pasquinelli, I. Périchaud, J.J. Simon, Philippe Torchio	2018	1
6	n‐Type multicrystalline silicon wafers prepared from plasma torch refined upgraded metallurgical feedstock Progress in Photovoltaics Research and Applications ·S. Martinuzzi, I. Périchaud, C. Trassy, J. Degoulange	2009	15
7	Multicrystalline silicon wafers prepared from upgraded metallurgical feedstock Solar Energy Materials and Solar Cells ·J. Degoulange, I. Périchaud, C. Trassy, S. Martinuzzi	2008	54
8	Micro and nano-structuration of silicon by femtosecond laser: Application to silicon photovoltaic cells fabrication Thin Solid Films ·Mathieu Halbwax, T. Sarnet, Diane-Kelly Chenevard, M. Sentís, Tyler Parker, Frank Torregrosa, V. Vervisch, I. Périchaud, S. Martinuzzi	2007	171
9	Limiting factors of phosphorus external gettering efficiency in multicrystalline silicon I. Périchaud, Guerreschi Gian Giacomo, S. Martinuzzi	2002	4
10	n–p Junction formation in p-type silicon by hydrogen ion implantation Solar Energy Materials and Solar Cells ·Damien Barakel, A. Ulyashin, I. Périchaud, S. Martinuzzi	2002	16
11	Gettering of impurities in solar silicon Solar Energy Materials and Solar Cells ·I. Périchaud	2002	64
12	Hydrogen passivation of newly developed EMC-multi-crystalline silicon Materials Science and Engineering B ·R. Einhaus, Filip Duerinckx, E. Van Kerschaver, Jozef Szlufcik, F. Durand, P.J. Ribeyron, Corentin Clavé, D. Sarti, Zhenghua Jiang, French Penck E, I. Périchaud, Laurent Clerc, S. Martinuzzi	1999	23
13	Direct Correlation of Solar Cell Performance with Metal Impurity Distributions in Polycrystalline Silicon using Synchrotron-Based X-ray Analysis MRS Proceedings ·Scott A. McHugo, A. C. Thompson, G. M. Lamble, A. A. MacDowell, Richard Celestre, H. A. Padmore, Mitsuru Imaizumi, Masafumi Yamaguchi, I. Périchaud, S. Martinuzzi, M. Werner, Markus Rinio, Heinrich Möller, Bhushan Sopori, H. Hieslmair, C. Flink, A. A. Istratov, E. R. Weber	1998	2
14	External gettering by aluminum–silicon alloying observed from carrier recombination at dislocations in float zone silicon wafers Applied Physics Letters ·S. Martinuzzi, I. Périchaud, R. Valavi	1997	11
15	From mc-Si material made by cold crucible continuous pulling to solar cells S. Martinuzzi, I. Périchaud, Laurent Clerc, P C Elwood, Guerreschi Gian Giacomo, D. Sarti, Gilles Dour, 邦世松本, Zhenghua Jiang, F. Durand	1996	1
16	Influence of oxygen on the recombination strength of dislocations in silicon wafers Materials Science and Engineering B ·R. Valavi, I. Périchaud	1996	6
17	Microstructure and Electrical Properties of some Multicrystalline Silicon Billets Continuously Cast in a Cold Crucible Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·I. Périchaud, Gilles Dour, Hamed Jamali Arand, Rafiye Aydın, D. Sarti, S. Martinuzzi	1996	5
18	Phosphorus diffusion effect on defect structure of silicon with oxygen precipitates revealed by gold diffusion study Applied Physics Letters ·E. B. Yakimov, I. Périchaud	1995	5
19	Aluminium Gettering in Silicon Wafers Journal de Physique III ·S. Martinuzzi, Wan Rizti Fadila, I. Périchaud, M. Pasquinelli	1995	4
20	Phosphorus External Gettering Efficiency in Multicrystalline Silicon Wafers Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·I. Périchaud, Guerreschi Gian Giacomo, M. Stemmer, S. Martinuzzi	1993	4

About I. Périchaud

I. Périchaud is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Computational Mechanics and Surfaces, Coatings and Films, having authored 54 papers that have together received 725 indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (48 papers), Thin-Film Transistor Technologies (38 papers), Semiconductor materials and interfaces (25 papers), Silicon Nanostructures and Photoluminescence (12 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers), Advanced Surface Polishing Techniques (5 papers), Solidification and crystal growth phenomena (3 papers) and Ion-surface interactions and analysis (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (568 citations), Atomic and Molecular Physics, and Optics (253 citations), Computational Mechanics (127 citations), Materials Chemistry (277 citations) and Surfaces, Coatings and Films (28 citations). I. Périchaud has collaborated with scholars based in France, Germany and Belgium. Frequent co-authors include S. Martinuzzi, Scott A. McHugo, Mathieu Halbwax, A. C. Thompson, V. Vervisch, T. Sarnet, Frank Torregrosa, M. Sentís, C. Trassy and J. Degoulange. Their work appears in journals such as Solar Energy Materials and Solar Cells, Materials Science and Engineering B, Applied Physics Letters, Journal of Applied Physics and Thin Solid Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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