V. Vervisch

470 total citations
27 papers, 340 citations indexed

About

V. Vervisch is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Radiation. According to data from OpenAlex, V. Vervisch has authored 27 papers receiving a total of 340 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 7 papers in Biomedical Engineering and 6 papers in Radiation. Recurrent topics in V. Vervisch's work include Silicon Carbide Semiconductor Technologies (10 papers), Radiation Effects in Electronics (7 papers) and Silicon and Solar Cell Technologies (6 papers). V. Vervisch is often cited by papers focused on Silicon Carbide Semiconductor Technologies (10 papers), Radiation Effects in Electronics (7 papers) and Silicon and Solar Cell Technologies (6 papers). V. Vervisch collaborates with scholars based in France, Germany and Belgium. V. Vervisch's co-authors include Frank Torregrosa, T. Sarnet, Mathieu Halbwax, M. Sentís, S. Martinuzzi, I. Périchaud, Laurent Ottaviani, A. Klix, A. Lyoussi and Laurent Roux and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Surface Science and Thin Solid Films.

In The Last Decade

V. Vervisch

26 papers receiving 328 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. Vervisch France 8 183 149 144 130 52 27 340
R. Hawley United States 5 77 0.4× 187 1.3× 48 0.3× 129 1.0× 85 1.6× 5 293
Gérard Razé France 10 148 0.8× 234 1.6× 26 0.2× 139 1.1× 93 1.8× 22 376
Thierry Donval France 11 69 0.4× 317 2.1× 43 0.3× 168 1.3× 147 2.8× 36 381
Rytis Buzelis Lithuania 9 181 1.0× 176 1.2× 92 0.6× 111 0.9× 66 1.3× 43 369
Holger Blaschke Germany 8 112 0.6× 221 1.5× 36 0.3× 109 0.8× 92 1.8× 40 312
M. Borden United States 6 98 0.5× 184 1.2× 65 0.5× 177 1.4× 46 0.9× 8 303
Mikhail A. Shulepov Russia 10 167 0.9× 66 0.4× 69 0.5× 60 0.5× 109 2.1× 47 315
Yuanan Zhao China 10 136 0.7× 146 1.0× 71 0.5× 136 1.0× 60 1.2× 43 328
S. Martin Germany 10 110 0.6× 209 1.4× 46 0.3× 88 0.7× 107 2.1× 16 336
Éric Lavastre France 9 125 0.7× 205 1.4× 27 0.2× 93 0.7× 73 1.4× 34 310

Countries citing papers authored by V. Vervisch

Since Specialization
Citations

This map shows the geographic impact of V. Vervisch's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Vervisch with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Vervisch more than expected).

Fields of papers citing papers by V. Vervisch

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Vervisch. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Vervisch. The network helps show where V. Vervisch may publish in the future.

Co-authorship network of co-authors of V. Vervisch

This figure shows the co-authorship network connecting the top 25 collaborators of V. Vervisch. A scholar is included among the top collaborators of V. Vervisch based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Vervisch. V. Vervisch is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Vervisch, V., et al.. (2024). Silicon carbide PIN diode for tritium detection. Vacuum. 230. 113707–113707.
2.
Vervisch, V., et al.. (2023). Semiconductor-based diodes for tritium detection. SHILAP Revista de lepidopterología. 288. 10020–10020. 1 indexed citations
3.
Rahajandraibe, Wenceslas, et al.. (2021). Front End Electronics for Radiation Detectors Based on SiC: Application to High Dose per Pulse Charged Particle Beam Current Measurement. IEEE Sensors Journal. 22(3). 2326–2337. 3 indexed citations
4.
Vervisch, V., Laurent Ottaviani, L. Vermeeren, et al.. (2016). Improvements in Realizing 4H-SiC Thermal Neutron Detectors. SHILAP Revista de lepidopterología. 106. 5004–5004. 9 indexed citations
5.
Klix, A., et al.. (2016). Fast Neutron Detection With 4H-SiC Based Diode Detector up to 500 °C Ambient Temperature. IEEE Transactions on Nuclear Science. 63(3). 1491–1498. 32 indexed citations
6.
7.
8.
Ottaviani, Laurent, et al.. (2015). 4H-SiC neutron sensors based on ion implanted 10B neutron converter layer. 1–5. 2 indexed citations
9.
Ottaviani, Laurent, V. Vervisch, L. Vermeeren, et al.. (2015). Study of the Stability of 4H-SiC Detectors by Thermal Neutron Irradiation. Materials science forum. 821-823. 875–878. 7 indexed citations
10.
11.
Vervisch, V., Laurent Ottaviani, L. Vermeeren, et al.. (2013). Nuclear radiation detector based on ion implanted p-n junction in 4H-SiC. SCK CEN Institutional Repository. 46. 1–5. 4 indexed citations
12.
Torres, R., Tatiana Itina, V. Vervisch, et al.. (2010). Study On Laser-Induced Periodic Structures And Photovoltaic Application. AIP conference proceedings. 576–581. 10 indexed citations
13.
Sarnet, T., R. Torres, V. Vervisch, et al.. (2008). Black silicon recent improvements for photovoltaic cells. SPIRE - Sciences Po Institutional REpository. 2 indexed citations
14.
Sarnet, T., Mathieu Halbwax, R. Torres, et al.. (2008). Femtosecond laser for black silicon and photovoltaic cells. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6881. 688119–688119. 36 indexed citations
15.
Vervisch, V., Frank Torregrosa, Laurent Roux, et al.. (2008). Realization of ultrashallow junctions by plasma immersion ion implantation and laser annealing. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 26(1). 286–292. 7 indexed citations
16.
Vervisch, V., Frank Torregrosa, T. Sarnet, et al.. (2008). Ultra shallow junctions fabrication by Plasma Immersion Implantation on PULSION® followed by different annealing processes. 49. 32–38. 3 indexed citations
17.
Torregrosa, Frank, Gilles Mathieu, Laurent Roux, et al.. (2008). Ultra-Shallow Junctions Fabrication by Plasma Immersion Implantation on PULSION® Followed by Laser Thermal Processing. AIP conference proceedings. 473–476. 1 indexed citations
18.
Halbwax, Mathieu, T. Sarnet, M. Sentís, et al.. (2007). Micro and nano-structuration of silicon by femtosecond laser: Application to silicon photovoltaic cells fabrication. Thin Solid Films. 516(20). 6791–6795. 171 indexed citations
19.
Vervisch, V., et al.. (2006). Deep Trench Doping by Plasma Immersion Ion Implantation in Silicon. AIP conference proceedings. 866. 229–232. 3 indexed citations
20.
Ottaviani, Laurent, Damien Barakel, V. Vervisch, & M. Pasquinelli. (2005). Electrical Characterizations of Hydrogenated 4H-SiC Epitaxial Samples. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 108-109. 677–682. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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