S. Golubović

902 total citations
41 papers, 444 citations indexed

About

S. Golubović is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Infectious Diseases. According to data from OpenAlex, S. Golubović has authored 41 papers receiving a total of 444 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Electrical and Electronic Engineering, 1 paper in Atomic and Molecular Physics, and Optics and 0 papers in Infectious Diseases. Recurrent topics in S. Golubović's work include Semiconductor materials and devices (41 papers), Advancements in Semiconductor Devices and Circuit Design (39 papers) and Silicon Carbide Semiconductor Technologies (17 papers). S. Golubović is often cited by papers focused on Semiconductor materials and devices (41 papers), Advancements in Semiconductor Devices and Circuit Design (39 papers) and Silicon Carbide Semiconductor Technologies (17 papers). S. Golubović collaborates with scholars based in Serbia, Australia and Bulgaria. S. Golubović's co-authors include N. Stojadinović, S. Djoric-Veljković, V. Davidović, Sima Dimitrijev, I. Manić, Danijel Danković, Milić M. Pejović, Goran Ristić, Zoran Prijić and Aneta Prijić and has published in prestigious journals such as Electronics Letters, Solid-State Electronics and Microelectronics Reliability.

In The Last Decade

S. Golubović

39 papers receiving 422 citations

Peers

Countries citing papers authored by S. Golubović

Since Specialization

Citations

This map shows the geographic impact of S. Golubović's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Golubović with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Golubović more than expected).

Fields of papers citing papers by S. Golubović

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Golubović. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Golubović. The network helps show where S. Golubović may publish in the future.

Co-authorship network of co-authors of S. Golubović

This figure shows the co-authorship network connecting the top 25 collaborators of S. Golubović. A scholar is included among the top collaborators of S. Golubović based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Golubović. S. Golubović is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Impact of negative bias temperature instability on p-channel power VDMOSFET used in practical applications 2022 ·Microelectronics Reliability ·Nikola Mitrović, Sandra Veljković, V. Davidović, S. Djoric-Veljković, S. Golubović, (unknown), Zoran Prijić, Danijel Danković	10
2	Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors 2021 ·VinaR (Institute of Nuclear Sciences "Vinča") ·Sandra Veljković, Nikola Mitrović, S. Djoric-Veljković, V. Davidović, I. Manić, S. Golubović, A. Paskaleva, D. Spassov, Zoran Prijić, Aneta Prijić, S. Stanković, Danijel Danković	7
3	A review of pulsed NBTI in P-channel power VDMOSFETs 2018 ·Microelectronics Reliability ·Danijel Danković, I. Manić, Aneta Prijić, V. Davidović, Zoran Prijić, S. Golubović, S. Djoric-Veljković, A. Paskaleva, D. Spassov, (unknown)	12
4	Degradation of p-channel power VDMOSFETs under pulsed NBT stress 2010 ·S. Djoric-Veljković, Danijel Danković, Aneta Prijić, I. Manić, V. Davidović, S. Golubović, Zoran Prijić, N. Stojadinović	0
5	Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs 2009 ·Microelectronics Reliability ·I. Manić, Danijel Danković, S. Djoric-Veljković, V. Davidović, S. Golubović, (unknown)	14
6	Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs 2008 ·IET Circuits Devices & Systems ·I. Manić, S. Djoric-Veljković, V. Davidović, Danijel Danković, S. Golubović, N. Stojadinović	5
7	New approach in estimating the lifetime in NBT stressed P-channel power VDMOSFETs 2008 ·Danijel Danković, I. Manić, V. Davidović, S. Djoric-Veljković, S. Golubović, N. Stojadinović	3
8	Lifetime Estimation in NBT Stressed P-Channel Power VDMOSFETs 2006 ·Danijel Danković, I. Manić, S. Djoric-Veljković, V. Davidović, S. Golubović, N. Stojadinović	6
9	Spontaneous Recovery in DC Gate Bias Stressed Power VDMOSFETs 2006 ·I. Manić, S. Djoric-Veljković, V. Davidović, Danijel Danković, S. Golubović, N. Stojadinović	1
10	Effects of electrical stressing in power VDMOSFETs 2004 ·N. Stojadinović, I. Manić, V. Davidović, Danijel Danković, S. Djoric-Veljković, S. Golubović, Sima Dimitrijev	9
11	Effects of electrical stressing in power VDMOSFETs 2004 ·Microelectronics Reliability ·N. Stojadinović, I. Manić, V. Davidović, Danijel Danković, S. Djoric-Veljković, S. Golubović, Sima Dimitrijev	32
12	Effects of elevated-temperature bias stressing on radiation response in power VDMOSFETs 2002 ·N. Stojadinović, S. Djoric-Veljković, I. Manić, V. Davidović, S. Golubović	2
13	Radiation hardening of power MOSFETs using electrical stress 2002 ·Electronics Letters ·N. Stojadinović, S. Djoric-Veljković, I. Manić, V. Davidović, S. Golubović	12
14	Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs 2001 ·Microelectronics Reliability ·N. Stojadinović, I. Manić, S. Djoric-Veljković, V. Davidović, S. Golubović, Sima Dimitrijev	34
15	Analysis of gamma-irradiation induced degradation mechanisms in power VDMOSFETS 1995 ·Microelectronics Reliability ·N. Stojadinović, S. Golubović, (unknown), Sima Dimitrijev	41
16	Annealing of gamma-irradiated Al-gate NMOS transistors 1994 ·Solid-State Electronics ·Milić M. Pejović, S. Golubović, Goran Ristić, (unknown)	8
17	The role of interface traps in rebound mechanisms 1994 ·physica status solidi (a) ·S. Golubović, Goran Ristić, Milić M. Pejović, Sima Dimitrijev	3
18	p MOS transistors for dosimetric application 1993 ·Electronics Letters ·Goran Ristić, S. Golubović, Milić M. Pejović	16
19	Analysis of gamma-radiation induced instability mechanisms in CMOS transistors 1989 ·Solid-State Electronics ·Sima Dimitrijev, S. Golubović, (unknown), Milić M. Pejović, N. Stojadinović	40
20	Gamma-Radiation Effects in CMOS Transistors 1987 ·European Solid-State Device Research Conference ·S. Golubović, Sima Dimitrijev, (unknown), Milić M. Pejović, N. Stojadinović	5

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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