Seong‐Wan Ryu

679 total citations
33 papers, 523 citations indexed

About

Seong‐Wan Ryu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computer Networks and Communications. According to data from OpenAlex, Seong‐Wan Ryu has authored 33 papers receiving a total of 523 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 2 papers in Computer Networks and Communications. Recurrent topics in Seong‐Wan Ryu's work include Semiconductor materials and devices (27 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Ferroelectric and Negative Capacitance Devices (11 papers). Seong‐Wan Ryu is often cited by papers focused on Semiconductor materials and devices (27 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Ferroelectric and Negative Capacitance Devices (11 papers). Seong‐Wan Ryu collaborates with scholars based in South Korea and United States. Seong‐Wan Ryu's co-authors include Yang‐Kyu Choi, Jin‐Woo Han, Seunghyup Yoo, Dipti Gupta, Sungho Kim, Yang‐Kyu Choi, Xing‐Jiu Huang, Yang‐Kyu Choi, Sung‐Jin Choi and Hyungsoon Im and has published in prestigious journals such as ACS Nano, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Seong‐Wan Ryu

31 papers receiving 495 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Seong‐Wan Ryu South Korea 13 459 133 75 46 28 33 523
Chun Wing Yeung United States 10 661 1.4× 294 2.2× 92 1.2× 40 0.9× 49 1.8× 13 772
Kavindra Kandpal India 13 279 0.6× 221 1.7× 61 0.8× 78 1.7× 22 0.8× 73 397
Hoon Jeong South Korea 12 345 0.8× 143 1.1× 49 0.7× 19 0.4× 46 1.6× 24 370
Huiming Bu United States 8 396 0.9× 167 1.3× 102 1.4× 59 1.3× 20 0.7× 21 475
Y. Yue United States 5 733 1.6× 169 1.3× 135 1.8× 43 0.9× 27 1.0× 8 807
Juin J. Liou United States 10 518 1.1× 49 0.4× 70 0.9× 42 0.9× 17 0.6× 35 568
Giovanni Betti Beneventi Italy 9 355 0.8× 94 0.7× 56 0.7× 16 0.3× 34 1.2× 18 367
Taehoon Kim South Korea 10 288 0.6× 215 1.6× 15 0.2× 40 0.9× 51 1.8× 31 323
Reza Sarvari Iran 10 407 0.9× 290 2.2× 122 1.6× 56 1.2× 10 0.4× 31 512
Mahdiar Ghadiry Malaysia 11 246 0.5× 209 1.6× 123 1.6× 39 0.8× 12 0.4× 42 349

Countries citing papers authored by Seong‐Wan Ryu

Since Specialization
Citations

This map shows the geographic impact of Seong‐Wan Ryu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Seong‐Wan Ryu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Seong‐Wan Ryu more than expected).

Fields of papers citing papers by Seong‐Wan Ryu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Seong‐Wan Ryu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Seong‐Wan Ryu. The network helps show where Seong‐Wan Ryu may publish in the future.

Co-authorship network of co-authors of Seong‐Wan Ryu

This figure shows the co-authorship network connecting the top 25 collaborators of Seong‐Wan Ryu. A scholar is included among the top collaborators of Seong‐Wan Ryu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Seong‐Wan Ryu. Seong‐Wan Ryu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Bae, Hagyoul, Tewook Bang, Choong‐Ki Kim, et al.. (2017). Improved Technique for Extraction of Effective Mobility by Considering Gate Bias-Dependent Inversion Charges in a Floating-Body Si/SiGe pMOSFET. Journal of Nanoscience and Nanotechnology. 17(5). 3247–3250.
3.
Ryu, Seong‐Wan, et al.. (2011). Data Retention Characteristics for Gate Oxide Schemes in Sub-50 nm Saddle-Fin Transistor Dynamic-Random-Access-Memory Technology. Japanese Journal of Applied Physics. 50(4S). 04DD01–04DD01. 4 indexed citations
4.
Ryu, Seong‐Wan, Sungho Kim, Myungsoo Seo, et al.. (2010). Fullerene‐Derivative‐Embedded Nanogap Field‐Effect‐Transistor and Its Nonvolatile Memory Application. Small. 6(15). 1617–1621. 14 indexed citations
5.
Choi, Sung‐Jin, et al.. (2010). A study of the memory effects of metallic core–metal oxide shell nanocrystals by a micelle dipping technique. Nanotechnology. 21(12). 125202–125202. 6 indexed citations
6.
Han, Jin‐Woo, et al.. (2010). Polysilicon Channel TFT With Separated Double-Gate for Unified RAM (URAM)—Unified Function for Nonvolatile SONOS Flash and High-Speed Capacitorless 1T-DRAM. IEEE Transactions on Electron Devices. 57(3). 601–607. 22 indexed citations
7.
Seo, Kwanyong, Hana Yoon, Seong‐Wan Ryu, et al.. (2010). Itinerant Helimagnetic Single-Crystalline MnSi Nanowires. ACS Nano. 4(5). 2569–2576. 28 indexed citations
8.
Ryu, Seong‐Wan, Jin‐Woo Han, Sung‐Jin Choi, et al.. (2009). Refinement of Unified Random Access Memory. IEEE Transactions on Electron Devices. 56(4). 601–608. 7 indexed citations
9.
Lee, Jong‐Won, Seong‐Wan Ryu, Dong Ok Shin, et al.. (2009). Geometric effects of nanocrystals in nonvolatile memory using block copolymer nanotemplate. Solid-State Electronics. 53(6). 640–643. 3 indexed citations
10.
Bae, Dong-il, Seong‐Wan Ryu, Bonsang Gu, & Yang‐Kyu Choi. (2009). A new approach to cell size scaling with a multi-dual cell and a buffer/background programming of unified RAM. Microelectronic Engineering. 87(2). 135–138. 1 indexed citations
11.
Ryu, Seong‐Wan, et al.. (2009). Gate-Induced Drain-Leakage (GIDL) Programming Method for Soft-Programming-Free Operation in Unified RAM (URAM). IEEE Electron Device Letters. 30(2). 189–191. 14 indexed citations
12.
Ryu, Seong‐Wan, Jin‐Woo Han, Dong‐Il Moon, & Yang-Kyu Choi. (2009). One-transistor nonvolatile SRAM (ONSRAM) on silicon nanowire SONOS. 1–4. 6 indexed citations
13.
14.
Han, Jin‐Woo, Seong‐Wan Ryu, Sungho Kim, et al.. (2008). Partially Depleted SONOS FinFET for Unified RAM (URAM)—Unified Function for High-Speed 1T DRAM and Nonvolatile Memory. IEEE Electron Device Letters. 29(7). 781–783. 17 indexed citations
15.
Han, Jin‐Woo, Seong‐Wan Ryu, Sungho Kim, et al.. (2008). A Bulk FinFET Unified-RAM (URAM) Cell for Multifunctioning NVM and Capacitorless 1T-DRAM. IEEE Electron Device Letters. 29(6). 632–634. 24 indexed citations
16.
Gupta, Dipti, et al.. (2008). Nonvolatile memory based on sol-gel ZnO thin-film transistors with Ag nanoparticles embedded in the ZnO/gate insulator interface. Applied Physics Letters. 93(22). 224106–224106. 75 indexed citations
17.
Ryu, Seong‐Wan, et al.. (2007). A thickness modulation effect of HfO2 interfacial layer between double-stacked Ag nanocrystals for nonvolatile memory device applications. Journal of Applied Physics. 101(2). 15 indexed citations
18.
Han, Jin‐Woo, Seong‐Wan Ryu, Sungho Kim, et al.. (2007). A Unified-RAM (URAM) Cell for Multi-Functioning Capacitorless DRAM and NVM. 929–932. 19 indexed citations
19.
Choi, Yang‐Kyu, Seong‐Wan Ryu, Maesoon Im, et al.. (2007). A High Speed Unified-RAM (URAM) Cell Multi-Functioning Capacitorless DRAM and NVM. 929–932. 4 indexed citations
20.
Lee, Hyunjin, Seong‐Wan Ryu, Kun-Rok Jeon, et al.. (2006). Sub-5nm All-Around Gate FinFET for Ultimate Scaling. 58–59. 95 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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