Kenji Momose

504 total citations
40 papers, 412 citations indexed

About

Kenji Momose is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Kenji Momose has authored 40 papers receiving a total of 412 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 10 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Kenji Momose's work include Silicon Carbide Semiconductor Technologies (26 papers), Silicon and Solar Cell Technologies (18 papers) and Thin-Film Transistor Technologies (11 papers). Kenji Momose is often cited by papers focused on Silicon Carbide Semiconductor Technologies (26 papers), Silicon and Solar Cell Technologies (18 papers) and Thin-Film Transistor Technologies (11 papers). Kenji Momose collaborates with scholars based in Japan, Mexico and United Kingdom. Kenji Momose's co-authors include H. Yonezu, Yuzo Furukawa, Yasuhiro Fujimoto, K. Aiki, Atsushi Utsumi, Kaoru Ojima, Takako Yamashita, Hirofumi Matsuhata, Katsuya Samonji and Makoto Kitabatake and has published in prestigious journals such as Applied Physics Letters, Thin Solid Films and Japanese Journal of Applied Physics.

In The Last Decade

Kenji Momose

37 papers receiving 398 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Kenji Momose Japan	11	373	233	147	61	57	40	412
Fangzhen Wu United States	13	330 0.9×	105 0.5×	64 0.4×	77 1.3×	35 0.6×	34	389
Alessia Frazzetto Italy	12	395 1.1×	143 0.6×	81 0.6×	81 1.3×	13 0.2×	19	427
Fahrettin Sarcan Türkiye	12	176 0.5×	188 0.8×	70 0.5×	34 0.6×	37 0.6×	35	294
Erdem Arkun United States	11	284 0.8×	101 0.4×	279 1.9×	114 1.9×	25 0.4×	27	370
Mitsuhiro Kushibe Japan	11	354 0.9×	164 0.7×	37 0.3×	40 0.7×	16 0.3×	32	376
Man-Fang Huang Taiwan	9	227 0.6×	198 0.8×	170 1.2×	89 1.5×	71 1.2×	35	356
Naotaka Kuroda Japan	11	308 0.8×	151 0.6×	196 1.3×	73 1.2×	25 0.4×	31	422
M. Bădilă Romania	11	390 1.0×	217 0.9×	38 0.3×	16 0.3×	67 1.2×	59	406
Shiyang Ji Japan	13	398 1.1×	161 0.7×	49 0.3×	122 2.0×	17 0.3×	58	470
L. I. Pomortseva Russia	8	283 0.8×	159 0.7×	203 1.4×	72 1.2×	40 0.7×	11	393

Countries citing papers authored by Kenji Momose

Since Specialization

Citations

This map shows the geographic impact of Kenji Momose's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kenji Momose with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kenji Momose more than expected).

Fields of papers citing papers by Kenji Momose

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kenji Momose. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kenji Momose. The network helps show where Kenji Momose may publish in the future.

Co-authorship network of co-authors of Kenji Momose

This figure shows the co-authorship network connecting the top 25 collaborators of Kenji Momose. A scholar is included among the top collaborators of Kenji Momose based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kenji Momose. Kenji Momose is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Nishihara, Yoshitaka, et al.. (2022). Evaluation of Defects in a SiC Substrate Using the Photoluminescence Measurement Method. Materials science forum. 1062. 268–272.

Mitani, Takeshi, Kazuma Eto, Kenji Momose, & Tomohisa Kato. (2021). Massive reduction of threading screw dislocations in 4H-SiC crystals grown by a hybrid method combined with solution growth and physical vapor transport growth on higher off-angle substrates. Applied Physics Express. 14(8). 85506–85506. 10 indexed citations

Nishihara, Yoshitaka, et al.. (2019). Detecting Basal Plane Dislocations Converted in Highly Doped Epilayers. Materials science forum. 963. 272–275. 1 indexed citations

Bandoh, Akira, et al.. (2017). High-Quality 100/150 mm p-Type 4H-SiC Epitaxial Wafer for High-Voltage Bipolar Devices. Materials science forum. 897. 55–58. 4 indexed citations

Kamei, Koji, et al.. (2017). Evaluation and Reduction of Epitaxial Wafer Defects Resulting from Carbon-Inclusion Defects in 4H-SiC Substrate. Materials science forum. 897. 39–42. 5 indexed citations

Masuda, Tatsuya, et al.. (2017). Investigation of Carrot Reduction Effect on 4H-Silicon Carbide Epitaxial Wafers with Optimized Buffer Layer. Materials science forum. 897. 75–78. 4 indexed citations

Bandoh, Akira, et al.. (2017). Depth Profile of Doping Concentration in Thick (> 100 μm) and Low-Doped (< 4 × 10<sup>14</sup> cm<sup>-3</sup>) 4H-SiC Epilayers. Materials science forum. 897. 83–86. 2 indexed citations

Yamashita, Takako, et al.. (2016). Structural analysis of the 3C|4H boundaries formed on prismatic planes in 4H-SiC epitaxial films. Journal of Crystal Growth. 455. 172–180. 11 indexed citations

Masuda, Tatsuya, et al.. (2016). Improvement on 150 mm 4H-SiC Epitaxial Wafer Quality. Materials science forum. 858. 201–204. 2 indexed citations

10.

Yamashita, Takako, et al.. (2015). Characteristic morphologies of triangular defects on Si-face 4H-SiC epitaxial films. Journal of Crystal Growth. 433. 97–104. 13 indexed citations

11.

Yamashita, Takako, et al.. (2015). Characterization of comet-shaped defects on C-face 4H-SiC epitaxial wafers by electron microscopy. Journal of Crystal Growth. 416. 142–147. 19 indexed citations

12.

Yamashita, Takako, et al.. (2013). Characterization of (4,4)- and (5,3)-Type Stacking-Faults in 4deg.-Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Photo-Luminescence Spectroscopy. Materials science forum. 740-742. 585–588. 6 indexed citations

13.

Momose, Kenji, Daisuke Muto, Yoshiki Shimodaira, et al.. (2012). Characterization of Triangular-Defects in 4° off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy. Materials science forum. 717-720. 363–366. 9 indexed citations

14.

Tsuchida, Hidekazu, Isaho Kamata, Kazutoshi Kojima, et al.. (2008). Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-loop Arrays in 4H-SiC(0001) and (000-1) Epitaxy. MRS Proceedings. 1069. 14 indexed citations

15.

Momose, Kenji, et al.. (2003). Improvement of crystalline quality of GaAs P1−−N layers with high nitrogen compositions at low-temperature growth by atomic hydrogen irradiation. Journal of Crystal Growth. 251(1-4). 443–448. 4 indexed citations

16.

Momose, Kenji, H. Yonezu, Kaoru Ojima, et al.. (2002). Hardening Effect of GaP_1-xN_xand GaAs_1-xN_xAlloys by Adding Nitrogen Atoms. Japanese Journal of Applied Physics. 41(Part 1, No. 12). 7301–7306. 28 indexed citations

17.

Furukawa, Yuzo, H. Yonezu, Kaoru Ojima, et al.. (2002). Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice Matched to Si(100) Substrate. Japanese Journal of Applied Physics. 41(Part 1, No. 2A). 528–532. 56 indexed citations

18.

Momose, Kenji, et al.. (2001). Dislocation-free and lattice-matched Si/GaP1−xNx/Si structure for photo-electronic integrated systems. Applied Physics Letters. 79(25). 4151–4153. 51 indexed citations

19.

Fujimoto, Yasuhiro, H. Yonezu, Atsushi Utsumi, Kenji Momose, & Yuzo Furukawa. (2001). Dislocation-free GaAsyP1−x−yNx/GaP0.98N0.02 quantum-well structure lattice- matched to a Si substrate. Applied Physics Letters. 79(9). 1306–1308. 38 indexed citations

20.

Fujimoto, Yasuhiro, et al.. (1999). High-Quality GaAs_xP_1-x/In_0.13Ga_0.87P Quantum Well Structure Grown on Si Substrate with a Very Few Threading Dislocations. Japanese Journal of Applied Physics. 38(12R). 6645–6645. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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