Kenji Momose

504 citations

40 papers · 412 indexed · h-index 11

Co-authors: H. Yonezu Yuzo Furukawa Yasuhiro Fujimoto K. Aiki Atsushi Utsumi Kaoru Ojima Takako Yamashita Hirofumi Matsuhata
Topics: Silicon Carbide Semiconductor Technologies (26 papers)Silicon and Solar Cell Technologies (18 papers)Thin-Film Transistor Technologies (11 papers)
Cited by: Condensed Matter Physics Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering
Journals: Applied Physics Letters Thin Solid Films Japanese Journal of Applied Physics
Partner nations: Japan Mexico United Kingdom

In The Last Decade

Kenji Momose

37 papers receiving 398 citations

Peers

Countries citing papers authored by Kenji Momose

Since Specialization

Citations

This map shows the geographic impact of Kenji Momose's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kenji Momose with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kenji Momose more than expected).

Fields of papers citing papers by Kenji Momose

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kenji Momose. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kenji Momose. The network helps show where Kenji Momose may publish in the future.

Co-authorship network of co-authors of Kenji Momose

This figure shows the co-authorship network connecting the top 25 collaborators of Kenji Momose. A scholar is included among the top collaborators of Kenji Momose based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kenji Momose. Kenji Momose is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Massive reduction of threading screw dislocations in 4H-SiC crystals grown by a hybrid method combined with solution growth and physical vapor transport growth on higher off-angle substrates 2021 ·Applied Physics Express ·Takeshi Mitani,Kazuma Eto,Kenji Momose,Tomohisa Kato	10
2	Detecting Basal Plane Dislocations Converted in Highly Doped Epilayers 2019 ·Materials science forum ·Yoshitaka Nishihara,Koji Kamei,Kenji Momose,(unknown)	1
3	Comparative Evaluation of Forward Voltage Degradation due to Propagating and Converted Basal Plane Dislocations 2018 ·Materials science forum ·Yoshitaka Nishihara,Koji Kamei,Kenji Momose,(unknown)	4
4	Evaluation and Reduction of Epitaxial Wafer Defects Resulting from Carbon-Inclusion Defects in 4H-SiC Substrate 2017 ·Materials science forum ·(unknown),Koji Kamei,Kenji Momose,(unknown)	5
5	Investigation of Carrot Reduction Effect on 4H-Silicon Carbide Epitaxial Wafers with Optimized Buffer Layer 2017 ·Materials science forum ·(unknown),Tatsuya Masuda,Daisuke Muto,Kenji Momose,(unknown)	4
6	High-Quality 100/150 mm p-Type 4H-SiC Epitaxial Wafer for High-Voltage Bipolar Devices 2017 ·Materials science forum ·(unknown),(unknown),Akira Bandoh,Kenji Momose,(unknown)	4
7	Improvement of Quality of Thick 4H-SiC Epilayers 2017 ·Materials science forum ·(unknown),Kazutoshi Kojima,Kenji Momose,(unknown),Hajime Okumura	2
8	Depth Profile of Doping Concentration in Thick (> 100 μm) and Low-Doped (< 4 × 10<sup>14</sup> cm<sup>-3</sup>) 4H-SiC Epilayers 2017 ·Materials science forum ·(unknown),(unknown),(unknown),Akira Bandoh,Kenji Momose,(unknown)	2
9	Improvement on 150 mm 4H-SiC Epitaxial Wafer Quality 2016 ·Materials science forum ·Tatsuya Masuda,(unknown),Jun Norimatsu,(unknown),Daisuke Muto,Kenji Momose,Hitoshi Osawa	2
10	Characteristic morphologies of triangular defects on Si-face 4H-SiC epitaxial films 2015 ·Journal of Crystal Growth ·Takako Yamashita,(unknown),Hirofumi Matsuhata,Kenji Momose,(unknown),Hajime Okumura	13
11	Characterization of comet-shaped defects on C-face 4H-SiC epitaxial wafers by electron microscopy 2015 ·Journal of Crystal Growth ·Takako Yamashita,Hirofumi Matsuhata,Takashi Sekiguchi,Kenji Momose,(unknown),Makoto Kitabatake	19
12	Characterization of (4,4)- and (5,3)-Type Stacking-Faults in 4deg.-Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Photo-Luminescence Spectroscopy 2013 ·Materials science forum ·Takako Yamashita,Hirofumi Matsuhata,(unknown),(unknown),Kenji Momose,Takayuki Sato,Makoto Kitabatake	6
13	Characterization of Triangular-Defects in 4° off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy 2012 ·Materials science forum ·(unknown),Kenji Momose,Daisuke Muto,Yoshiki Shimodaira,(unknown),(unknown),Takayuki Sato,Hirofumi Matsuhata,Makoto Kitabatake	9
14	Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-loop Arrays in 4H-SiC(0001) and (000-1) Epitaxy 2008 ·MRS Proceedings ·Hidekazu Tsuchida,Isaho Kamata,Kazutoshi Kojima,Kenji Momose,(unknown),Tomoyuki Takahashi,Yuuki Ishida,(unknown)	14
15	Improvement of crystalline quality of GaAs P1−−N layers with high nitrogen compositions at low-temperature growth by atomic hydrogen irradiation 2003 ·Journal of Crystal Growth ·Kenji Momose,H. Yonezu,Yuzo Furukawa,Atsushi Utsumi,Yusuke Yoshizumi,(unknown)	4
16	Hardening Effect of GaP_1-xN_xand GaAs_1-xN_xAlloys by Adding Nitrogen Atoms 2002 ·Japanese Journal of Applied Physics ·Kenji Momose,H. Yonezu,(unknown),Kaoru Ojima,Yuzo Furukawa,Atsushi Utsumi,K. Aiki	28
17	Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice Matched to Si(100) Substrate 2002 ·Japanese Journal of Applied Physics ·Yuzo Furukawa,H. Yonezu,Kaoru Ojima,Katsuya Samonji,Yasuhiro Fujimoto,Kenji Momose,K. Aiki	56
18	Dislocation-free and lattice-matched Si/GaP1−xNx/Si structure for photo-electronic integrated systems 2001 ·Applied Physics Letters ·Kenji Momose,H. Yonezu,Yasuhiro Fujimoto,Yuzo Furukawa,(unknown),K. Aiki	51
19	High-Quality GaAs_xP_1-x/In_0.13Ga_0.87P Quantum Well Structure Grown on Si Substrate with a Very Few Threading Dislocations 1999 ·Japanese Journal of Applied Physics ·Yasuhiro Fujimoto,H. Yonezu,(unknown),Katsuya Samonji,Kenji Momose,(unknown)	6
20	Characteristics of carbon-lithium rechargeable batteries 1987 ·Kenji Momose,Hiroshi Hayakawa,Nobuharu Koshiba,(unknown)	0

About Kenji Momose

Kenji Momose is a scholar working on Structural Biology, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 40 papers that have together received 412 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (26 papers), Silicon and Solar Cell Technologies (18 papers) and Thin-Film Transistor Technologies (11 papers). The work is most often cited by research in Condensed Matter Physics (147 citations), Atomic and Molecular Physics, and Optics (233 citations) and Electrical and Electronic Engineering (373 citations). Kenji Momose has collaborated with scholars based in Japan, Mexico and United Kingdom. Frequent co-authors include H. Yonezu, Yuzo Furukawa, Yasuhiro Fujimoto, K. Aiki, Atsushi Utsumi, Kaoru Ojima, Takako Yamashita, Hirofumi Matsuhata, Katsuya Samonji and Makoto Kitabatake. Their work appears in journals such as Applied Physics Letters, Thin Solid Films and Japanese Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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