Baoxing Duan

1.5k total citations
124 papers, 1.2k citations indexed

About

Baoxing Duan is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Baoxing Duan has authored 124 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 113 papers in Electrical and Electronic Engineering, 26 papers in Condensed Matter Physics and 15 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Baoxing Duan's work include Silicon Carbide Semiconductor Technologies (106 papers), Semiconductor materials and devices (61 papers) and Advancements in Semiconductor Devices and Circuit Design (57 papers). Baoxing Duan is often cited by papers focused on Silicon Carbide Semiconductor Technologies (106 papers), Semiconductor materials and devices (61 papers) and Advancements in Semiconductor Devices and Circuit Design (57 papers). Baoxing Duan collaborates with scholars based in China. Baoxing Duan's co-authors include Yintang Yang, Bo Zhang, Zhen Cao, Zhaoji Li, Song Yuan, Yandong Wang, Yang Yintang, Xin Yang, Xufeng Hong and Licheng Sun and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

Baoxing Duan

106 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Baoxing Duan China 20 1.1k 274 144 97 81 124 1.2k
Hamid Amini Moghadam Australia 16 718 0.6× 311 1.1× 180 1.3× 124 1.3× 88 1.1× 51 813
Ruiliang Xie China 11 652 0.6× 651 2.4× 245 1.7× 106 1.1× 92 1.1× 25 779
M. Tack Belgium 19 1.2k 1.1× 572 2.1× 192 1.3× 117 1.2× 73 0.9× 79 1.3k
Greg Dunne United States 12 793 0.7× 75 0.3× 133 0.9× 87 0.9× 69 0.9× 33 840
Yoshiharu Anda Japan 12 486 0.4× 376 1.4× 208 1.4× 46 0.5× 102 1.3× 27 563
Daniel B. Habersat United States 20 1.8k 1.6× 74 0.3× 103 0.7× 157 1.6× 60 0.7× 69 1.9k
J.B. Fedison United States 13 558 0.5× 156 0.6× 94 0.7× 122 1.3× 80 1.0× 26 616
Fatima Husna United States 16 1.2k 1.0× 509 1.9× 278 1.9× 173 1.8× 133 1.6× 31 1.3k
Qihao Song United States 14 583 0.5× 494 1.8× 147 1.0× 69 0.7× 75 0.9× 48 690
Nariaki Ikeda Japan 12 704 0.6× 758 2.8× 373 2.6× 108 1.1× 157 1.9× 40 881

Countries citing papers authored by Baoxing Duan

Since Specialization
Citations

This map shows the geographic impact of Baoxing Duan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Baoxing Duan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Baoxing Duan more than expected).

Fields of papers citing papers by Baoxing Duan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Baoxing Duan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Baoxing Duan. The network helps show where Baoxing Duan may publish in the future.

Co-authorship network of co-authors of Baoxing Duan

This figure shows the co-authorship network connecting the top 25 collaborators of Baoxing Duan. A scholar is included among the top collaborators of Baoxing Duan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Baoxing Duan. Baoxing Duan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Duan, Baoxing, et al.. (2025). A novel LDMOS with dual-drift region and dual-conduction path with ultra-low specific on-resistance. Acta Physica Sinica. 74(8). 87301–87301.
2.
Duan, Baoxing, et al.. (2024). A fast-switching low-loss field-stop IGBT with dual control gate of SIPOS material. Applied Physics Letters. 125(2).
3.
Duan, Baoxing, et al.. (2024). Novel Low On-State Voltage Reverse-Conducting LIGBT With an Electron-Controlled Gate. IEEE Electron Device Letters. 45(10). 1926–1929.
4.
Yang, Xin, Baoxing Duan, & Yintang Yang. (2023). GaN/Si Heterojunction VDMOS with High Breakdown Voltage and Low Specific On-Resistance. Micromachines. 14(6). 1166–1166. 1 indexed citations
5.
Tang, Chunping, et al.. (2021). Analysis of novel silicon based lateral power devices with floating substrate on insulator. Acta Physica Sinica. 70(14). 148501–148501. 1 indexed citations
6.
Duan, Baoxing, et al.. (2020). Unified Analytical Model for SOI LDMOS With Electric Field Modulation. IEEE Journal of the Electron Devices Society. 8. 686–694. 6 indexed citations
7.
Duan, Baoxing, et al.. (2020). Novel vertical power MOSFET with partial GaN/Si heterojunction to improve breakdown voltage by breakdown point transfer terminal technology. Semiconductor Science and Technology. 35(10). 10LT03–10LT03. 3 indexed citations
8.
9.
Duan, Baoxing, et al.. (2019). SiC gate‐controlled bipolar‐field‐effect composite transistor with large on‐state current. Micro & Nano Letters. 14(14). 1406–1409. 1 indexed citations
10.
Duan, Baoxing, et al.. (2018). Analytical model of AlGaN/GaN HEMTs with a partial GaN cap layer. Superlattices and Microstructures. 123. 210–217. 4 indexed citations
11.
Duan, Baoxing, et al.. (2017). Novel lateral double-diffused MOSFET with vertical assisted deplete-substrate layer. Acta Physica Sinica. 66(7). 77302–77302. 2 indexed citations
12.
Duan, Baoxing, et al.. (2015). New folding lateral double-diffused metal-oxide-semiconductor field effect transistor with the step oxide layer. Acta Physica Sinica. 64(6). 67304–67304. 2 indexed citations
13.
Duan, Baoxing, et al.. (2014). New super junction lateral double-diffused MOSFET with electric field modulation by differently doping the buffered layer. Acta Physica Sinica. 63(24). 247301–247301. 3 indexed citations
14.
Duan, Baoxing & Yang Yintang. (2014). Breakdown voltage analysis for the new Al0.25 Ga0.75N/GaN HEMTs with the step AlGaN layers. Acta Physica Sinica. 63(5). 57302–57302. 13 indexed citations
15.
Duan, Baoxing, et al.. (2014). New REBULF super junction LDMOS with the N type buffered layer. Acta Physica Sinica. 63(22). 227302–227302. 2 indexed citations
16.
Duan, Baoxing, Yang Yintang, & Kevin J. Chen. (2012). Breakdown voltage analysis for new Al0.25Ga0.75N/GaN HEMT with F ion implantation. Acta Physica Sinica. 61(22). 227302–227302. 7 indexed citations
17.
Duan, Baoxing, Yang Yintang, & Kevin J. Chen. (2012). Breakdown vovtage analysis of new AlGaN/GaN high electron mobility transistor with the partial fixed charge in Si3N4 layer. Acta Physica Sinica. 61(24). 247302–247302. 9 indexed citations
18.
Duan, Baoxing, Bo Zhang, & Zhaoji Li. (2007). New Lateral Super Junction MOSFETs with n+-Floating Layeron High-Resistance Substrate. Journal of Semiconductors. 28(2). 166–170. 1 indexed citations
19.
Zhang, Bo, Baoxing Duan, & Zhaoji Li. (2006). Breakdown Voltage Analysis of a REBULF LDMOS Structurewith an n+-Floating Layer. Journal of Semiconductors. 27(4). 730–734. 9 indexed citations
20.
Duan, Baoxing, Bo Zhang, & Zhaoji Li. (2006). New thin-film power MOSFETs with a buried oxide double step structure. IEEE Electron Device Letters. 27(5). 377–379. 86 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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