Jiarui Gong

522 total citations
31 papers, 300 citations indexed

About

Jiarui Gong is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Jiarui Gong has authored 31 papers receiving a total of 300 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 16 papers in Condensed Matter Physics and 14 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Jiarui Gong's work include GaN-based semiconductor devices and materials (16 papers), Ga2O3 and related materials (14 papers) and Semiconductor materials and devices (13 papers). Jiarui Gong is often cited by papers focused on GaN-based semiconductor devices and materials (16 papers), Ga2O3 and related materials (14 papers) and Semiconductor materials and devices (13 papers). Jiarui Gong collaborates with scholars based in United States, Saudi Arabia and South Korea. Jiarui Gong's co-authors include Zhenqiang Ma, Dong Liu, Kwangeun Kim, Sang June Cho, John D. Albrecht, Jung‐Hun Seo, Weidong Zhou, Baxter Moody, Rafael Dalmau and Munho Kim and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

Jiarui Gong

28 papers receiving 295 citations

Peers

Jiarui Gong

EEE

CMP

EOMM

Yumin Zhang China

Riad Kabouche France

David I. Shahin United States

Hareesh Chandrasekar India

Victor-Tapio Rangel-Kuoppa Austria

Manyam Pilla United States

Shahadat H. Sohel United States

P. Misra Germany

Y. Morishima Japan

X.W. Wang United States

Yumin Zhang China

Jiarui Gong

171 ×1.0

EEE

200 ×1.2

CMP

110 ×0.8

EOMM

169 ×1.5

49 ×0.6

Citations per year, relative to Jiarui Gong Jiarui Gong (= 1×) peers Yumin Zhang

Countries citing papers authored by Jiarui Gong

Since Specialization

Citations

This map shows the geographic impact of Jiarui Gong's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jiarui Gong with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jiarui Gong more than expected).

Fields of papers citing papers by Jiarui Gong

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jiarui Gong. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jiarui Gong. The network helps show where Jiarui Gong may publish in the future.

Co-authorship network of co-authors of Jiarui Gong

This figure shows the co-authorship network connecting the top 25 collaborators of Jiarui Gong. A scholar is included among the top collaborators of Jiarui Gong based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jiarui Gong. Jiarui Gong is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lu, Yi, Haicheng Cao, Tsung‐Han Tsai, et al.. (2025). Band Alignment and Leakage Mechanism Analysis of p-Si/n-AlN Heterojunction Diodes with the Al ₂ O ₃ Interlayer. ACS Applied Electronic Materials. 7(21). 9700–9709.

Abbasi, Haris Naeem, Tien Khee Ng, Vijay Kumar Gudelli, et al.. (2025). Investigation of ultrathin surface passivation layers for GaN: A comparative analysis of Al2O3, SiO2, and SiNx in reducing surface recombination. Applied Physics Letters. 127(1).

Lu, Yi, Jiarui Gong, Haicheng Cao, et al.. (2025). High Rectification, Low Leakage p-Si/n-AlN Heterojunction PN Diode. IEEE Electron Device Letters. 46(7). 1219–1222. 1 indexed citations

Chang, Hongliang, Xu Zhang, Mohamed Ben Hassine, et al.. (2025). Defect-modulation in α-Ga2O3 molecular beam epitaxial photodetector investigated through pulsed-light persistent-photoconductivity. APL Materials. 13(6). 3 indexed citations

Gong, Jiarui, Fei Fan, Jie Zhou, et al.. (2024). Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy. Applied Surface Science. 685. 162006–162006.

Gong, Jiarui, Shalini Lal, Jisoo Kim, et al.. (2024). Characteristics of Native Oxides-Interfaced GaAs/Ge np Diodes. IEEE Electron Device Letters. 45(9). 1669–1672. 6 indexed citations

Gong, Jiarui, Fikadu Alema, A. Osinsky, et al.. (2024). 0.86 kV p-Si/(001)-Ga₂O₃ Heterojunction Diode. IEEE Electron Device Letters. 45(3). 444–447. 15 indexed citations

Lu, Yi, Vishal Khandelwal, Carolina Adamo, et al.. (2024). Band alignment characterizations of grafted GaAs/(2¯01) Ga2O3 heterojunction via x-ray photoelectron spectroscopy. Journal of Applied Physics. 136(24). 1 indexed citations

Gong, Jiarui, et al.. (2024). Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN. Journal of Applied Physics. 135(11). 2 indexed citations

10.

Gong, Jiarui, Qingxiao Wang, Haris Naeem Abbasi, et al.. (2024). Synthesis and characteristics of a monocrystalline GaAs/β-Ga2O3 p-n heterojunction. Applied Surface Science. 663. 160176–160176. 11 indexed citations

11.

Abbasi, Haris Naeem, Seunghyun Lee, Yi Lu, et al.. (2024). Structural and electrical properties of grafted Si/GaAsSb heterojunction. Applied Physics Letters. 125(10). 8 indexed citations

12.

Gong, Jiarui, Fikadu Alema, Tien Khee Ng, et al.. (2024). Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) p-n heterojunction determined by X-ray photoelectron spectroscopy. Applied Surface Science. 655. 159615–159615. 10 indexed citations

13.

Abbasi, Haris Naeem, Yi Lu, Ding Wang, et al.. (2024). Si/AlN p-n heterojunction interfaced with ultrathin SiO2. Applied Surface Science. 682. 161737–161737. 6 indexed citations

14.

Gong, Jiarui, Ping Wang, Kuangye Lu, et al.. (2023). Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes. Advanced Electronic Materials. 9(5). 9 indexed citations

15.

Gong, Jiarui, et al.. (2023). Interfacial band parameters of ultrathin ALD-ZrO2 on Ga-polar GaN through XPS measurements. AIP Advances. 13(5). 4 indexed citations

16.

Abbasi, Haris Naeem, Xin Qi, Jiarui Gong, et al.. (2023). Passivation of CdTe/MgCdTe double heterostructure by dielectric thin films deposited using atomic layer deposition. Journal of Applied Physics. 134(13). 5 indexed citations

17.

Gong, Jiarui, Kuangye Lu, Jisoo Kim, et al.. (2021). Influences of ALD Al ₂ O ₃ on the surface band-bending of c -plane, Ga-face GaN. Japanese Journal of Applied Physics. 61(1). 11003–11003. 11 indexed citations

18.

Cho, Sang June, Dong Liu, Jisoo Kim, et al.. (2020). Fabrication of AlGaAs/GaAs/diamond heterojunctions for diamond-collector HBTs. AIP Advances. 10(12). 26 indexed citations

19.

Kim, Kwangeun, Huilong Zhang, Dong Liu, et al.. (2020). AlGaN/GaN Schottky-Gate HEMTs With UV/O₃-Treated Gate Interface. IEEE Electron Device Letters. 41(10). 1488–1491. 14 indexed citations

20.

Liu, Dong, Sang June Cho, Huilong Zhang, et al.. (2019). Influences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDs. AIP Advances. 9(8). 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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