Jungsik Kim

1.3k total citations
94 papers, 996 citations indexed

About

Jungsik Kim is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry. According to data from OpenAlex, Jungsik Kim has authored 94 papers receiving a total of 996 indexed citations (citations by other indexed papers that have themselves been cited), including 62 papers in Electrical and Electronic Engineering, 15 papers in Biomedical Engineering and 10 papers in Materials Chemistry. Recurrent topics in Jungsik Kim's work include Semiconductor materials and devices (47 papers), Advancements in Semiconductor Devices and Circuit Design (34 papers) and Integrated Circuits and Semiconductor Failure Analysis (12 papers). Jungsik Kim is often cited by papers focused on Semiconductor materials and devices (47 papers), Advancements in Semiconductor Devices and Circuit Design (34 papers) and Integrated Circuits and Semiconductor Failure Analysis (12 papers). Jungsik Kim collaborates with scholars based in South Korea, United States and France. Jungsik Kim's co-authors include Jinho Jeong, M. Meyyappan, Jin‐Woo Han, Jung Kim, Jeong‐Soo Lee, Seung‐Bok Choi, Farrokh Janabi‐Sharifi, Chang‐Ki Baek, Taiuk Rim and Wonseok Choi and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Industrial Electronics.

In The Last Decade

Jungsik Kim

85 papers receiving 945 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jungsik Kim South Korea 17 667 176 100 98 76 94 996
Ki Jin Han South Korea 19 999 1.5× 254 1.4× 68 0.7× 89 0.9× 61 0.8× 103 1.3k
S. Wiak Poland 15 325 0.5× 128 0.7× 200 2.0× 89 0.9× 56 0.7× 103 921
Fei Fei China 20 411 0.6× 335 1.9× 174 1.7× 87 0.9× 105 1.4× 120 1.5k
Seung-Wook Lee South Korea 17 653 1.0× 261 1.5× 51 0.5× 79 0.8× 75 1.0× 95 1.0k
Hyun‐Sik Kim South Korea 17 682 1.0× 425 2.4× 160 1.6× 93 0.9× 42 0.6× 163 1.2k
Yizhe Chang United States 14 299 0.4× 48 0.3× 60 0.6× 76 0.8× 54 0.7× 62 695
Ibrahim Ahmad Malaysia 15 462 0.7× 132 0.8× 86 0.9× 49 0.5× 84 1.1× 173 745
Daesung Lee South Korea 18 632 0.9× 417 2.4× 66 0.7× 29 0.3× 61 0.8× 117 1.2k
Minh Tran Vietnam 19 653 1.0× 69 0.4× 127 1.3× 71 0.7× 238 3.1× 129 1.2k
A. Richardson United Kingdom 16 563 0.8× 190 1.1× 55 0.6× 90 0.9× 34 0.4× 110 772

Countries citing papers authored by Jungsik Kim

Since Specialization
Citations

This map shows the geographic impact of Jungsik Kim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jungsik Kim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jungsik Kim more than expected).

Fields of papers citing papers by Jungsik Kim

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jungsik Kim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jungsik Kim. The network helps show where Jungsik Kim may publish in the future.

Co-authorship network of co-authors of Jungsik Kim

This figure shows the co-authorship network connecting the top 25 collaborators of Jungsik Kim. A scholar is included among the top collaborators of Jungsik Kim based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jungsik Kim. Jungsik Kim is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lee, Hojoon, et al.. (2025). Soft Error in Saddle Fin-Based DRAM at Cryogenic Temperature. IEEE Access. 13. 130603–130609.
2.
Cassé, M., et al.. (2025). Investigation of TID and DD Effects on FD SOI Nanowire FET Induced by Proton Irradiation. IEEE Transactions on Electron Devices. 72(6). 2795–2800.
3.
Lee, Hojoon, et al.. (2025). Single-Event Upset and Total Ionizing Dose Effects on DDR4 DRAM Due to Proton Irradiation Under Different Temperatures. IEEE Transactions on Electron Devices. 72(9). 5243–5246.
4.
Han, Jin‐Woo, et al.. (2025). Abnormal Operation of 6-T SRAM Based on Nanosheet FET Due to Total Ionizing Dose. IEEE Access. 13. 159639–159648.
5.
Kim, Jungsik, et al.. (2024). Novel Dummy Cell Programming Scheme to Improve Retention Characteristics in 3-D NAND Flash Memory. IEEE Transactions on Electron Devices. 71(8). 4644–4648.
6.
Kim, Jungsik, et al.. (2024). Decomposition of Charge Loss Mechanisms in 3-D Nand Flash Memory: Impact of Cell Dimension via High-Temperature Long-Term Retention Characteristics. IEEE Transactions on Electron Devices. 71(10). 6040–6048. 1 indexed citations
7.
Lee, Hojoon, et al.. (2024). Comprehensive Hammering and Parasitic BJT Effects in Vertically Stacked DRAM. IEEE Access. 12. 155119–155124. 2 indexed citations
8.
Kim, Jungsik, et al.. (2024). Design Guideline of Saddle-Fin-Based DRAM for Mitigating Rowhammer Effect. IEEE Transactions on Electron Devices. 71(4). 2417–2422. 4 indexed citations
9.
Han, Jin‐Woo, et al.. (2024). Mitigation of Single Event Upset Effects in Nanosheet FET 6T SRAM Cell. IEEE Access. 12. 130347–130355. 1 indexed citations
10.
Kim, Donghwi, et al.. (2024). Impact of Electron and Hole Trap Profiles in BE-TOX on Retention Characteristics of 3D NAND Flash Memory. IEEE Transactions on Nanotechnology. 23. 733–740. 1 indexed citations
11.
Han, Jin‐Woo, et al.. (2023). Investigation Into the Degradation of DDR4 DRAM Owing to Total Ionizing Dose Effects. IEEE Access. 11. 97456–97465. 5 indexed citations
12.
Kim, Sun Jin, et al.. (2023). Prediction of Statistical Distribution on Nanosheet FET by Geometrical Variability Using Various Machine Learning Models. IEEE Access. 11. 125217–125225. 1 indexed citations
13.
Kim, Jungsik, et al.. (2023). Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory. Micromachines. 14(11). 2007–2007.
14.
Kim, Jungsik, et al.. (2022). Impact of P/E Stress on Trap Profiles in Bandgap-Engineered Tunneling Oxide of 3D NAND Flash Memory. IEEE Access. 10. 62423–62428. 6 indexed citations
15.
Kim, Jungsik, Sun Jin Kim, Jin‐Woo Han, & M. Meyyappan. (2021). Machine Learning Approach for Prediction of Point Defect Effect in FinFET. IEEE Transactions on Device and Materials Reliability. 21(2). 252–257. 14 indexed citations
16.
Kim, Jungsik, Jin‐Woo Han, & M. Meyyappan. (2020). The Impact of a Single Displacement Defect on Tunneling Field-Effect Transistors. IEEE Transactions on Electron Devices. 67(11). 4765–4769. 11 indexed citations
17.
Han, Jin‐Woo, Jungsik Kim, & M. Meyyappan. (2020). Transformable Junctionless Transistor (T-JLT). IEEE Transactions on Electron Devices. 67(6). 2639–2644. 1 indexed citations
18.
Kim, Jungsik, et al.. (2017). Effects of Authentic Leadership on Organizational Commitment - A Case of Military Organization -. Journal of Human Resource Management Research. 24(2). 1–26. 2 indexed citations
19.
Kim, Jungsik, et al.. (2015). Effects of single grain boundary and random interface traps on electrical variations of sub-30 nm polysilicon nanowire structures. Microelectronic Engineering. 149. 113–116. 8 indexed citations
20.
Kim, Jungsik, et al.. (2014). Role of an encapsulating layer for reducing resistance drift in phase change random access memory. AIP Advances. 4(12). 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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