G. Hobler

2.1k total citations
106 papers, 1.5k citations indexed

About

G. Hobler is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Materials Chemistry. According to data from OpenAlex, G. Hobler has authored 106 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 87 papers in Electrical and Electronic Engineering, 77 papers in Computational Mechanics and 24 papers in Materials Chemistry. Recurrent topics in G. Hobler's work include Ion-surface interactions and analysis (75 papers), Integrated Circuits and Semiconductor Failure Analysis (57 papers) and Silicon and Solar Cell Technologies (43 papers). G. Hobler is often cited by papers focused on Ion-surface interactions and analysis (75 papers), Integrated Circuits and Semiconductor Failure Analysis (57 papers) and Silicon and Solar Cell Technologies (43 papers). G. Hobler collaborates with scholars based in Austria, Germany and United States. G. Hobler's co-authors include E. Bertagnolli, Alois Lugstein, S. Selberherr, K. Nordlund, Flyura Djurabekova, G. Betz, Andreas Steiger, H. Cerva, C.S. Rafferty and L. Palmetshofer and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

G. Hobler

101 papers receiving 1.5k citations

Peers

Countries citing papers authored by G. Hobler

Since Specialization

Citations

This map shows the geographic impact of G. Hobler's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Hobler with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Hobler more than expected).

Fields of papers citing papers by G. Hobler

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Hobler. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Hobler. The network helps show where G. Hobler may publish in the future.

Co-authorship network of co-authors of G. Hobler

This figure shows the co-authorship network connecting the top 25 collaborators of G. Hobler. A scholar is included among the top collaborators of G. Hobler based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Hobler. G. Hobler is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Repulsive interatomic potentials calculated at three levels of theory 2025 ·Physical review. A ·K. Nordlund, Susi Lehtola, G. Hobler	1
2	Ion-beam channeling in a single-surface modified Si membrane 2025 ·Applied Surface Science ·(unknown), (unknown), Saba Tabean, (unknown), Tom Wirtz, G. Hobler, Daniel Primetzhofer, Santhana Eswara	0
3	Sputter yields of surfaces with nanoscale textures: Analytical results and Monte Carlo simulations 2023 ·Journal of Applied Physics ·R. Mark Bradley, G. Hobler	3
4	Second order corrections to the sputter yield of a curved surface 2021 ·Journal of Applied Physics ·R. Mark Bradley, G. Hobler	3
5	Absence of a Crystal Direction Regime in which Sputtering Corresponds to Amorphous Material 2020 ·Physical Review Letters ·(unknown), K. Nordlund, G. Hobler, M. Balden, Fredric Granberg, (unknown), Tiago Fiorini da Silva, R. Neu	19
6	Sputtering of SicGe1−c nanospheres 2018 ·Physical review. B. ·Herbert M. Urbassek, (unknown), R. Mark Bradley, G. Hobler	7
7	Probing the limitations of Sigmund's model of spatially resolved sputtering using Monte Carlo simulations 2016 ·Physical review. B. ·G. Hobler, R. Mark Bradley, Herbert M. Urbassek	24
8	Dynamic binary collision simulation of focused ion beam milling of deep trenches 2010 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·G. Hobler, (unknown)	16
9	Topography simulation of sputtering using an algorithm with second order approximation in space 2010 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·(unknown), G. Hobler	4
10	Assessment of approximations for efficient topography simulation of ion beam processes: 10keV Ar on Si 2009 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·(unknown), G. Hobler	21
11	Ion Beam Induced Micro/Nano Fabrication: Shape Fabrication 2007 ·Journal of the Korean Society for Precision Engineering ·(unknown), G. Hobler	1
12	Level set approach for the simulation of focused ion beam processing on the micro/nano scale 2007 ·Nanotechnology ·(unknown), G. Hobler, Andreas Steiger, Alois Lugstein, E. Bertagnolli	27
13	Monte Carlo simulations of defect recovery within a 10 keV collision cascade in 3C–SiC 2007 ·Journal of Applied Physics ·(unknown), Fei Gao, William J. Weber, G. Hobler	32
14	Random and channeling stopping power of H in Si below 100 keV 2005 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·G. Hobler, K.K. Bourdelle, T. Akatsu	16
15	International data- and information exchange for off-site emergency management--where to go? 2004 ·Radiation Protection Dosimetry ·G. Hobler	1
16	Simulation of Focused Ion Beam Induced Damage Formation in Crystalline Silicon 2003 ·MRS Proceedings ·G. Hobler, Alois Lugstein, (unknown), E. Bertagnolli	1
17	Simulation of two-dimensional implantation profiles with a large concentration range in crystalline silicon using an advanced Monte Carlo method 2002 ·G. Hobler, H. Pötzl	1
18	Monte Carlo Simulation of Channeled Phosphorus Implantations in Silicon 1995 ·European Solid-State Device Research Conference ·S. Herzog, A. Simionescu, G. Hobler, L. Palmetshofer, (unknown), M. Grasserbauer	2
19	Monte Carlo simulation of two-dimensional implanted dopant distributions at mask edges 1995 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·G. Hobler	100
20	Verification of Ion Implantation Models by Monte Carlo Simulations 1987 ·G. Hobler, S. Selberherr	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact