A. Vogt

1.2k total citations · 1 hit paper
29 papers, 1000 citations indexed

About

A. Vogt is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Aerospace Engineering. According to data from OpenAlex, A. Vogt has authored 29 papers receiving a total of 1000 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 15 papers in Atomic and Molecular Physics, and Optics and 6 papers in Aerospace Engineering. Recurrent topics in A. Vogt's work include Semiconductor Quantum Structures and Devices (8 papers), Electromagnetic Compatibility and Measurements (6 papers) and Electromagnetic Compatibility and Noise Suppression (5 papers). A. Vogt is often cited by papers focused on Semiconductor Quantum Structures and Devices (8 papers), Electromagnetic Compatibility and Measurements (6 papers) and Electromagnetic Compatibility and Noise Suppression (5 papers). A. Vogt collaborates with scholars based in Germany, Moldova and United Kingdom. A. Vogt's co-authors include H. L. Hartnagel, C. Koerdt, H. Kurz, Stefan Facsko, C. Trappe, T. Dekorsy, H.L. Hartnagel, I. M. Tiginyanu, G. Irmer and J. Monecke and has published in prestigious journals such as Science, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

A. Vogt

25 papers receiving 964 citations

Hit Papers

Formation of Ordered Nanoscale Semiconductor Dots by Ion ... 1999 2026 2008 2017 1999 200 400 600
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering
    1999 691 citations Stefan Facsko, T. Dekorsy et al. Science profile →

Peers

A. Vogt
G. G. Bentini Italy
G. Hobler Austria
Kenji Gamo Japan
Yves Quéré France
K. Gamo Japan
Eizo Miyauchi Japan
D. Arnold United States
J.C. Twichell United States
T. Klitsner United States
Sherry L. Baker United States
G. G. Bentini Italy
A. Vogt
Citations per year, relative to A. Vogt A. Vogt (= 1×) peers G. G. Bentini

Countries citing papers authored by A. Vogt

Since Specialization
Citations

This map shows the geographic impact of A. Vogt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Vogt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Vogt more than expected).

Fields of papers citing papers by A. Vogt

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Vogt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Vogt. The network helps show where A. Vogt may publish in the future.

Co-authorship network of co-authors of A. Vogt

This figure shows the co-authorship network connecting the top 25 collaborators of A. Vogt. A scholar is included among the top collaborators of A. Vogt based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Vogt. A. Vogt is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Vogt, A., et al.. (2017). Modeling Challenging EMC Problems Using the Method of Moments. White Rose Research Online (University of Leeds, The University of Sheffield, University of York).
2.
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Vogt, A., et al.. (2015). A Measurement Setup for Quantification of Electromagnetic Interference in Metallic Casings. IEEE Transactions on Electromagnetic Compatibility. 57(6). 1354–1364. 18 indexed citations
4.
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Duan, Xiaomin, et al.. (2012). Progress towards a combined CIM/MoM approach for EMI analysis of electronic systems. 1–6. 2 indexed citations
7.
Vogt, A., et al.. (2010). An Integrated 435 GHz Quasi-Optical Frequency Tripler.
8.
Sağlam, M., A. Vogt, H. L. Hartnagel, et al.. (2001). Microstructure analysis of ohmic contacts on MBE grown n-GaSb and investigation of sub-micron contacts. Journal of Crystal Growth. 227-228. 625–629. 15 indexed citations
9.
Tiginyanu, I. M., V. V. Ursaki, Y. S. Raptis, et al.. (1999). Raman Modes in Porous GaP under Hydrostatic Pressure. physica status solidi (b). 211(1). 281–286. 7 indexed citations
10.
Facsko, Stefan, T. Dekorsy, C. Koerdt, et al.. (1999). Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering. Science. 285(5433). 1551–1553. 691 indexed citations breakdown →
11.
Vogt, A., et al.. (1999). Non-annealed ohmic contacts to p-GaSb grown by molecular beam epitaxy. Materials Science and Engineering B. 66(1-3). 199–202. 17 indexed citations
12.
Mutamba, K., et al.. (1998). A comparative study of uniaxial pressure effects in intraband AlGaAs/GaAs and interband InAs/AlSb/GaSb resonant tunneling diodes. Applied Physics Letters. 72(13). 1629–1631. 9 indexed citations
13.
Vogt, A., H.L. Hartnagel, V. Buschmann, et al.. (1998). Ohmic contact formation mechanism of the PdGeAu system on n-type GaSb grown by molecular beam epitaxy. Journal of Applied Physics. 83(12). 7715–7719. 27 indexed citations
14.
Tiginyanu, I. M., C. Schwab, J.J. Grob, et al.. (1997). Ion implantation as a tool for controlling the morphology of porous gallium phosphide. Applied Physics Letters. 71(26). 3829–3831. 30 indexed citations
15.
Tiginyanu, I. M., G. Irmer, J. Monecke, A. Vogt, & H.L. Hartnagel. (1997). Porosity-induced modification of the phonon spectrum of n-GaAs. Semiconductor Science and Technology. 12(4). 491–493. 38 indexed citations
16.
Vogt, A., et al.. (1997). Characterisation of degradation mechanisms in resonant tunnelling diodes. Microelectronics Reliability. 37(10-11). 1691–1694. 1 indexed citations
17.
Vogt, A., et al.. (1996). Electrical and microstructure analysis of ohmic contacts to p- and n-type GaSb, grown by molecular beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(6). 3514–3519. 20 indexed citations
18.
Vogt, A., et al.. (1993). Microwave resonances with partially untwinned YBCO films near 10 GHz. IEEE Transactions on Applied Superconductivity. 3(1). 1715–1718. 4 indexed citations
19.
Scherer, Torsten, et al.. (1991). Off-axis sputtered Y1Ba2Cu3O7-δ films on NdGaO3. Cryogenics. 31(11). 975–978. 10 indexed citations
20.
Vogt, A., et al.. (1989). A 10-bit high speed CMOS CAS macrocell. 6.7/1–6.7/4. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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