A.G. Foyt

1.2k citations

31 papers · 861 indexed · h-index 18

Electrical and Electronic Engineering top 5%
Atomic and Molecular Physics, and Optics top 5%
Materials Chemistry
Computational Mechanics top 10%
Biomedical Engineering

Co-authors: J.P. Donnelly W.T. Lindley Alan L. McWhorter C. M. Wolfe T. C. Harman G. E. Stillman F. J. Leonberger I. Melngailis
Topics: Semiconductor Quantum Structures and Devices (20 papers)Advanced Semiconductor Detectors and Materials (14 papers)Semiconductor materials and interfaces (5 papers)
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Instrumentation
Journals: Physical Review Letters Applied Physics Letters Proceedings of the IEEE
Partner nations: United States

In The Last Decade

A.G. Foyt

31 papers receiving 738 citations

Peers

Countries citing papers authored by A.G. Foyt

Since Specialization

Citations

This map shows the geographic impact of A.G. Foyt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A.G. Foyt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A.G. Foyt more than expected).

Fields of papers citing papers by A.G. Foyt

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A.G. Foyt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A.G. Foyt. The network helps show where A.G. Foyt may publish in the future.

Co-authorship network of co-authors of A.G. Foyt

This figure shows the co-authorship network connecting the top 25 collaborators of A.G. Foyt. A scholar is included among the top collaborators of A.G. Foyt based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A.G. Foyt. A.G. Foyt is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	High-speed ultraviolet and x-ray-sensitive InP photoconductive detectors 1982 ·Applied Physics Letters ·Thomas F. Deutsch,F. J. Leonberger,A.G. Foyt,Dennis M. Mills	21
2	Picosecond InP optoelectronic switches 1982 ·Applied Physics Letters ·A.G. Foyt,F. J. Leonberger,R.C. Williamson	36
3	IIA-8 InP optoelectronic mixers 1981 ·IEEE Transactions on Electron Devices ·A.G. Foyt,F. J. Leonberger,R.C. Williamson	1
4	The electro-optic applications of InP 1981 ·Journal of Crystal Growth ·A.G. Foyt	11
5	Self-sustained pulsations in GaInAsP diode lasers 1980 ·Applied Physics Letters ·J. N. Walpole,Thomas Lind,J. J. Hsieh,A.G. Foyt	14
6	Unequal electron and hole impact ionization coefficients in GaAs 1974 ·Applied Physics Letters ·G. E. Stillman,C. M. Wolfe,J. A. Rossi,A.G. Foyt	53
7	Schottky barrier InxGa1−xAs alloy avalanche photodiodes for 1.06 μm 1974 ·Applied Physics Letters ·G. E. Stillman,C. M. Wolfe,A.G. Foyt,W.T. Lindley	39
8	Pb1−xSnxTe photovoltaic diodes and diode lasers produced by proton bombardment 1972 ·Solid-State Electronics ·J.P. Donnelly,A. R. Calawa,T. C. Harman,A.G. Foyt,W.T. Lindley	20
9	Carrier freeze-out and acceptor energies in p-type Hg1−xCdxTe 1972 ·Journal of Physics and Chemistry of Solids ·C.T. Elliott,I. Melngailis,T. C. Harman,A.G. Foyt	66
10	MIS electroluminescent diodes in ZnTe 1970 ·Solid-State Electronics ·J.P. Donnelly,A.G. Foyt,W.T. Lindley,G.W. Iseler	24
11	Isolation of junction devices in GaAs using proton bombardment 1969 ·Solid-State Electronics ·A.G. Foyt,W.T. Lindley,C. M. Wolfe,J.P. Donnelly	111
12	TYPE CONVERSION AND p-n JUNCTIONS IN n-CdTe PRODUCED BY ION IMPLANTATION 1968 ·Applied Physics Letters ·J.P. Donnelly,A.G. Foyt,E. D. Hinkley,W.T. Lindley,J. O. Dimmock	34
13	The Gunn effect in n-CdTe 1967 ·IEEE Transactions on Electron Devices ·(unknown),A.G. Foyt	8
14	CURRENT RUNAWAY AND AVALANCHE EFFECTS IN n—CdTe 1967 ·Applied Physics Letters ·(unknown),Alan L. McWhorter,A.G. Foyt	8
15	The Gunn effect in polar semiconductors 1966 ·IEEE Transactions on Electron Devices ·A.G. Foyt,Alan L. McWhorter	54
16	Bulk GaAs microwave amplifiers 1966 ·IEEE Transactions on Electron Devices ·A.G. Foyt,T.M. Quist	11
17	Evidence for Impurity States Associated with High-Energy Conduction-Band Extrema inn-CdTeCdTe 1966 ·Physical Review Letters ·A.G. Foyt,R. E. Halsted,William Paul	25
18	High electric field and pressure effects in n-CdTe, n-InAs, and N-InSb 1965 ·IEEE Transactions on Electron Devices ·A.G. Foyt,Alan L. McWhorter,William Paul	1
19	S-band GaAs Gunn effect oscillators 1965 ·Proceedings of the IEEE ·T.M. Quist,A.G. Foyt	9
20	Gunn effect in GaAs 1964 ·IEEE Transactions on Electron Devices ·A.G. Foyt,Alan L. McWhorter	7

About A.G. Foyt

A.G. Foyt is a scholar working on Instrumentation, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering, having authored 31 papers that have together received 861 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (20 papers), Advanced Semiconductor Detectors and Materials (14 papers) and Semiconductor materials and interfaces (5 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (502 citations), Electrical and Electronic Engineering (737 citations) and Instrumentation (41 citations). A.G. Foyt has collaborated with scholars based in United States. Frequent co-authors include J.P. Donnelly, W.T. Lindley, Alan L. McWhorter, C. M. Wolfe, T. C. Harman, G. E. Stillman, F. J. Leonberger, I. Melngailis, C.T. Elliott and R.C. Williamson. Their work appears in journals such as Physical Review Letters, Applied Physics Letters and Proceedings of the IEEE.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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