B. de Mauduit

850 total citations
34 papers, 689 citations indexed

About

B. de Mauduit is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, B. de Mauduit has authored 34 papers receiving a total of 689 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 15 papers in Materials Chemistry and 13 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in B. de Mauduit's work include Silicon and Solar Cell Technologies (24 papers), Thin-Film Transistor Technologies (14 papers) and Semiconductor materials and interfaces (13 papers). B. de Mauduit is often cited by papers focused on Silicon and Solar Cell Technologies (24 papers), Thin-Film Transistor Technologies (14 papers) and Semiconductor materials and interfaces (13 papers). B. de Mauduit collaborates with scholars based in France, United Kingdom and Switzerland. B. de Mauduit's co-authors include A. Claverie, F. Cristiano, Gérard Assayag, M. Omri, B. Colombeau, Caroline Bonafos, X. Hebras, D. Mathiot, J. Grisolia and E. Scheid and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Materials Science and Engineering A.

In The Last Decade

B. de Mauduit

33 papers receiving 678 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. de Mauduit France 13 637 309 198 172 57 34 689
S. B. Herner United States 14 526 0.8× 153 0.5× 159 0.8× 93 0.5× 73 1.3× 34 574
M. Omri France 10 375 0.6× 259 0.8× 87 0.4× 109 0.6× 27 0.5× 27 444
M. Italia Italy 12 430 0.7× 124 0.4× 133 0.7× 118 0.7× 135 2.4× 36 499
B. G. Svensson Sweden 13 465 0.7× 148 0.5× 173 0.9× 186 1.1× 17 0.3× 35 520
D. Venables United States 12 492 0.8× 171 0.6× 115 0.6× 99 0.6× 41 0.7× 44 549
A. E. Widmer Germany 12 480 0.8× 132 0.4× 273 1.4× 84 0.5× 64 1.1× 20 551
S. Yu. Shiryaev Denmark 13 475 0.7× 429 1.4× 219 1.1× 108 0.6× 115 2.0× 41 633
R. T. Fulks United States 12 378 0.6× 205 0.7× 154 0.8× 52 0.3× 46 0.8× 27 447
J. M. Fairfield United States 12 588 0.9× 374 1.2× 206 1.0× 87 0.5× 55 1.0× 15 660
A.M. Papon France 11 468 0.7× 102 0.3× 122 0.6× 61 0.4× 119 2.1× 25 522

Countries citing papers authored by B. de Mauduit

Since Specialization
Citations

This map shows the geographic impact of B. de Mauduit's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. de Mauduit with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. de Mauduit more than expected).

Fields of papers citing papers by B. de Mauduit

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. de Mauduit. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. de Mauduit. The network helps show where B. de Mauduit may publish in the future.

Co-authorship network of co-authors of B. de Mauduit

This figure shows the co-authorship network connecting the top 25 collaborators of B. de Mauduit. A scholar is included among the top collaborators of B. de Mauduit based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. de Mauduit. B. de Mauduit is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Claverie, A., B. Colombeau, B. de Mauduit, et al.. (2003). Extended defects in shallow implants. Applied Physics A. 76(7). 1025–1033. 106 indexed citations
2.
Cristiano, F., N. Cherkashin, X. Hebras, et al.. (2003). Ion beam induced defects in crystalline silicon. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 216. 46–56. 36 indexed citations
3.
4.
Claverie, A., F. Cristiano, B. Colombeau, E. Scheid, & B. de Mauduit. (2002). Thermal evolution of interstitial defects in implanted silicon. 538–543. 3 indexed citations
5.
Paillard, Vincent, Pascal Puech, P. Temple‐Boyer, et al.. (1999). Improved characterization of polycrystalline silicon film, by resonant Raman scattering. Thin Solid Films. 337(1-2). 93–97. 3 indexed citations
6.
Omri, M., B. de Mauduit, & A. Claverie. (1999). Relative Stability of Perfect and Faulted Dislocation Loops in Silicon. MRS Proceedings. 568. 5 indexed citations
7.
Claverie, A., et al.. (1999). Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 147(1-4). 1–12. 66 indexed citations
8.
Temple‐Boyer, P., B. de Mauduit, Brigitte Caussat, & J.P. Couderc. (1999). Correlations between stress and microstructure into LPCVD silicon films. Journal de Physique IV (Proceedings). 9(PR8). Pr8–1107. 3 indexed citations
9.
Grisolia, J., et al.. (1999). TEM studies of the defects introduced by ion implantation in SiC. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 147(1-4). 62–67. 15 indexed citations
10.
Omri, M., B. de Mauduit, A. Claverie, et al.. (1999). Coarsening of End-of-Range defects in ion-implanted silicon annealed in neutral and oxidizing ambients. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 148(1-4). 273–278. 6 indexed citations
11.
Bonafos, Caroline, M. Omri, B. de Mauduit, et al.. (1997). Transient enhanced diffusion of boron in presence of end-of-range defects. Journal of Applied Physics. 82(6). 2855–2861. 41 indexed citations
12.
Claverie, A., Caroline Bonafos, M. Omri, et al.. (1996). Transient Enhanced Diffusion of Dopants in Preamorphised Si Layers. MRS Proceedings. 438. 9 indexed citations
13.
Cristiano, F., A. Nejim, B. de Mauduit, A. Claverie, & P.L.F. Hemment. (1996). Characterization of extended defects in SiGe alloys formed by high dose Ge+ implantation into Si. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 120(1-4). 156–160. 9 indexed citations
14.
Mauduit, B. de, et al.. (1994). Identification of EOR defects due to the regrowth of amorphous layers created by ion bombardment. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 84(2). 190–194. 48 indexed citations
15.
Mauduit, B. de, et al.. (1993). Crystallization of amorphous thin low pressure chemical vapour deposition silicon films: in situ TEM measurement of grain growth rates. Journal of Materials Science Letters. 12(12). 910–912. 7 indexed citations
16.
Pieraggi, B., et al.. (1993). Kinetic Study Of Crystallisation In Amorphous Thin Lpcvd Si Films. MRS Proceedings. 321. 1 indexed citations
18.
Scheid, E., et al.. (1990). Super Large Grain Polycrystalline Silicon Obtained from Pyrolysis of Si2H6 and Annealing. Japanese Journal of Applied Physics. 29(11A). L2105–L2105. 18 indexed citations
19.
20.
Pieraggi, B., et al.. (1987). Microstructure of boron-doped silicon layers prepared by low pressure chemical vapour deposition. Thin Solid Films. 150(1). 69–82. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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