F.P. Heiman

1.2k total citations
17 papers, 929 citations indexed

About

F.P. Heiman is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, F.P. Heiman has authored 17 papers receiving a total of 929 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 5 papers in Biomedical Engineering and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in F.P. Heiman's work include Advancements in Semiconductor Devices and Circuit Design (12 papers), Semiconductor materials and devices (12 papers) and Silicon and Solar Cell Technologies (5 papers). F.P. Heiman is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (12 papers), Semiconductor materials and devices (12 papers) and Silicon and Solar Cell Technologies (5 papers). F.P. Heiman collaborates with scholars based in United States and Czechia. F.P. Heiman's co-authors include G. Warfield, S.R. Hofstein, P. H. Robinson, Joseph R. Burns, D.J. Dumin, C.W. Mueller and K.H. Zaininger and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Proceedings of the IEEE.

In The Last Decade

F.P. Heiman

16 papers receiving 832 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
F.P. Heiman United States	10	892	324	147	80	31	17	929
S.R. Hofstein United States	12	792 0.9×	248 0.8×	163 1.1×	62 0.8×	4 0.1×	18	840
L.D. Yau United States	13	711 0.8×	145 0.4×	77 0.5×	59 0.7×	7 0.2×	33	755
M. Frei United States	13	688 0.8×	249 0.8×	153 1.0×	97 1.2×	62 2.0×	66	728
P. Ranade United States	17	1.3k 1.4×	220 0.7×	148 1.0×	147 1.8×	24 0.8×	36	1.3k
C.H. Ling Singapore	14	585 0.7×	95 0.3×	124 0.8×	27 0.3×	23 0.7×	77	614
R. Castagné France	8	561 0.6×	392 1.2×	140 1.0×	34 0.4×	31 1.0×	22	602
B. Guillaumot France	17	1.1k 1.2×	114 0.4×	220 1.5×	131 1.6×	20 0.6×	65	1.1k
Amlan Majumdar United States	15	830 0.9×	231 0.7×	141 1.0×	266 3.3×	44 1.4×	45	938
Gianni Taraschi United States	18	1.1k 1.3×	487 1.5×	271 1.8×	263 3.3×	24 0.8×	26	1.2k
L. Van Uitert Japan	7	217 0.2×	201 0.6×	223 1.5×	49 0.6×	36 1.2×	11	458

Countries citing papers authored by F.P. Heiman

Since Specialization

Citations

This map shows the geographic impact of F.P. Heiman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F.P. Heiman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F.P. Heiman more than expected).

Fields of papers citing papers by F.P. Heiman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F.P. Heiman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F.P. Heiman. The network helps show where F.P. Heiman may publish in the future.

Co-authorship network of co-authors of F.P. Heiman

This figure shows the co-authorship network connecting the top 25 collaborators of F.P. Heiman. A scholar is included among the top collaborators of F.P. Heiman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F.P. Heiman. F.P. Heiman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

17 of 17 papers shown

Robinson, P. H. & F.P. Heiman. (1971). Use of HCl Gettering in Silicon Device Processing. Journal of The Electrochemical Society. 118(1). 141–141. 42 indexed citations

Dumin, D.J., et al.. (1969). Thin-film silicon: Preparation, properties, and device applications. Proceedings of the IEEE. 57(9). 1490–1498. 22 indexed citations

Heiman, F.P. & P. H. Robinson. (1968). Silicon-on-sapphire epitaxial bipolar transistors. Solid-State Electronics. 11(4). 411–412. 4 indexed citations

Burns, Joseph R., et al.. (1967). Silicon on sapphire complementary MOS memory systems. 76–77. 3 indexed citations

Heiman, F.P.. (1967). DONOR SURFACE STATES AND BULK ACCEPTOR TRAPS IN SILICON-ON-SAPPHIRE FILMS. Applied Physics Letters. 11(4). 132–134. 21 indexed citations

Heiman, F.P.. (1967). On the determination of minority carrier lifetime from the transient response of an MOS capacitor. IEEE Transactions on Electron Devices. 14(11). 781–784. 167 indexed citations

Heiman, F.P., et al.. (1967). Silicon-on-Sapphire Complementary MOS Memory Cells. IEEE Journal of Solid-State Circuits. 2(4). 208–212. 11 indexed citations

Heiman, F.P.. (1966). Deep depletion thin-film silicon-on-sapphire MOS transistors. IEEE Transactions on Electron Devices. ED-13(8/9). 672–672. 1 indexed citations

Heiman, F.P.. (1966). Thin-film silicon-on-sapphire deep depletion MOS transistors. IEEE Transactions on Electron Devices. ED-13(12). 855–862. 52 indexed citations

10.

Heiman, F.P., et al.. (1965). Temperature dependence of n-type MOS transistors. IEEE Transactions on Electron Devices. 12(3). 142–148. 31 indexed citations

11.

Heiman, F.P. & G. Warfield. (1965). Space-Charge Capacitance of an Intrinsic Semiconductor Film. Journal of Applied Physics. 36(10). 3206–3211. 7 indexed citations

12.

Heiman, F.P. & G. Warfield. (1965). The effects of oxide traps on the MOS capacitance. IEEE Transactions on Electron Devices. 12(4). 167–178. 379 indexed citations

13.

Hofstein, S.R., et al.. (1964). Pinch off in insulated-gate field-effect transistors. Proceedings of the IEEE. 52(4). 414–415. 7 indexed citations

14.

Heiman, F.P., K.H. Zaininger, & G. Warfield. (1964). Determination of conductivity type from MOS-capacitance measurements. Proceedings of the IEEE. 52(7). 863–864. 5 indexed citations

15.

Hofstein, S.R. & F.P. Heiman. (1963). The silicon insulated-gate field-effect transistor. Proceedings of the IEEE. 51(9). 1190–1202. 161 indexed citations

16.

Heiman, F.P. & S.R. Hofstein. (1963). The insulated-gate field-effect transistor. IEEE Transactions on Electron Devices. 10(2). 104–104. 3 indexed citations

17.

Heiman, F.P. & S.R. Hofstein. (1962). The insulated-gate field-effect transistor. 58–58. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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