S.R. Hofstein

1.1k total citations
18 papers, 840 citations indexed

About

S.R. Hofstein is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, S.R. Hofstein has authored 18 papers receiving a total of 840 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 2 papers in Biomedical Engineering. Recurrent topics in S.R. Hofstein's work include Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Silicon and Solar Cell Technologies (7 papers). S.R. Hofstein is often cited by papers focused on Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Silicon and Solar Cell Technologies (7 papers). S.R. Hofstein collaborates with scholars based in United States. S.R. Hofstein's co-authors include G. Warfield, F.P. Heiman and K.H. Zaininger and has published in prestigious journals such as Applied Physics Letters, Proceedings of the IEEE and IEEE Transactions on Electron Devices.

In The Last Decade

S.R. Hofstein

16 papers receiving 725 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S.R. Hofstein United States	12	792	248	163	62	58	18	840
D. R. Kerr United States	13	565 0.7×	141 0.6×	231 1.4×	98 1.6×	46 0.8×	22	639
F.P. Heiman United States	10	892 1.1×	324 1.3×	147 0.9×	80 1.3×	6 0.1×	17	929
Osamu Nakada Japan	13	230 0.3×	209 0.8×	103 0.6×	77 1.2×	20 0.3×	28	459
T. Findakly United States	11	595 0.8×	480 1.9×	64 0.4×	66 1.1×	16 0.3×	35	703
J. C. C. Tsai United States	11	647 0.8×	293 1.2×	168 1.0×	43 0.7×	221 3.8×	16	739
Heihachi Sato Japan	11	308 0.4×	229 0.9×	62 0.4×	78 1.3×	15 0.3×	63	411
Yuzuru Ohji Japan	19	1.0k 1.3×	121 0.5×	251 1.5×	57 0.9×	45 0.8×	117	1.1k
F.E. Prins Germany	15	485 0.6×	432 1.7×	131 0.8×	231 3.7×	13 0.2×	51	673
Chung Len Lee Taiwan	13	522 0.7×	98 0.4×	163 1.0×	38 0.6×	15 0.3×	75	557
Makoto Ishii Japan	12	263 0.3×	150 0.6×	58 0.4×	35 0.6×	17 0.3×	32	325

Countries citing papers authored by S.R. Hofstein

Since Specialization

Citations

This map shows the geographic impact of S.R. Hofstein's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.R. Hofstein with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.R. Hofstein more than expected).

Fields of papers citing papers by S.R. Hofstein

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.R. Hofstein. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.R. Hofstein. The network helps show where S.R. Hofstein may publish in the future.

Co-authorship network of co-authors of S.R. Hofstein

This figure shows the co-authorship network connecting the top 25 collaborators of S.R. Hofstein. A scholar is included among the top collaborators of S.R. Hofstein based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S.R. Hofstein. S.R. Hofstein is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

18 of 18 papers shown

Hofstein, S.R.. (1968). A silicon vidicon target with electronically variable light sensitivity and spectral response. IEEE Transactions on Electron Devices. 15(12). 1018–1023.

Hofstein, S.R.. (1967). SPACE-CHARGE-LIMITED IONIC CURRENTS IN SILICON DIOXIDE FILMS. Applied Physics Letters. 10(10). 291–293. 38 indexed citations

Hofstein, S.R.. (1967). Proton and sodium transport in SiO₂films. IEEE Transactions on Electron Devices. 14(11). 749–759. 99 indexed citations

Hofstein, S.R.. (1967). Stabilization of MOS devices. Solid-State Electronics. 10(7). 657–670. 101 indexed citations

Hofstein, S.R.. (1967). TRITIUM-LABELED FIELD-INDUCED PROTON TRANSPORT IN SiO2 FILMS. Applied Physics Letters. 11(3). 95–96. 9 indexed citations

Hofstein, S.R.. (1967). Minority carrier lifetime determination from inversion layer transient response. IEEE Transactions on Electron Devices. 14(11). 785–786. 46 indexed citations

Hofstein, S.R.. (1966). An investigation of instability and charge motion in metal-silicon oxide-silicon structures. IEEE Transactions on Electron Devices. ED-13(2). 222–237. 105 indexed citations

Hofstein, S.R.. (1966). An analysis of deep depletion thin-film MOS transistors. IEEE Transactions on Electron Devices. ED-13(12). 846–855. 22 indexed citations

Hofstein, S.R. & G. Warfield. (1965). Carrier mobility and current saturation in the MOS transistor. IEEE Transactions on Electron Devices. 12(3). 129–138. 61 indexed citations

10.

Hofstein, S.R. & G. Warfield. (1965). The insulated gate tunnel junction triode. IEEE Transactions on Electron Devices. 12(2). 66–76. 22 indexed citations

11.

Hofstein, S.R. & G. Warfield. (1965). Physical limitations on the frequency response of a semiconductor surface inversion layer. Solid-State Electronics. 8(3). 321–341. 127 indexed citations

12.

Hofstein, S.R.. (1965). A model for the charge motion and instability in the metal-silicon oxide-silicon structure. IEEE Transactions on Electron Devices. 12(9). 504–504. 1 indexed citations

13.

Hofstein, S.R.. (1964). Physical Limitations Associated with Some Surface Effect Devices.. PhDT. 4 indexed citations

14.

Hofstein, S.R., et al.. (1964). Pinch off in insulated-gate field-effect transistors. Proceedings of the IEEE. 52(4). 414–415. 7 indexed citations

15.

Hofstein, S.R., K.H. Zaininger, & G. Warfield. (1964). Frequency response of the surface inversion layer in silicon. Proceedings of the IEEE. 52(8). 971–972. 21 indexed citations

16.

Hofstein, S.R. & F.P. Heiman. (1963). The silicon insulated-gate field-effect transistor. Proceedings of the IEEE. 51(9). 1190–1202. 161 indexed citations

17.

Heiman, F.P. & S.R. Hofstein. (1963). The insulated-gate field-effect transistor. IEEE Transactions on Electron Devices. 10(2). 104–104. 3 indexed citations

18.

Heiman, F.P. & S.R. Hofstein. (1962). The insulated-gate field-effect transistor. 58–58. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact