Scott Schmucker

1.3k total citations
40 papers, 979 citations indexed

About

Scott Schmucker is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Scott Schmucker has authored 40 papers receiving a total of 979 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 20 papers in Atomic and Molecular Physics, and Optics and 20 papers in Materials Chemistry. Recurrent topics in Scott Schmucker's work include Semiconductor materials and devices (16 papers), Graphene research and applications (14 papers) and Advancements in Semiconductor Devices and Circuit Design (9 papers). Scott Schmucker is often cited by papers focused on Semiconductor materials and devices (16 papers), Graphene research and applications (14 papers) and Advancements in Semiconductor Devices and Circuit Design (9 papers). Scott Schmucker collaborates with scholars based in United States, China and Russia. Scott Schmucker's co-authors include Joseph W. Lyding, Joshua D. Wood, Eric Pop, Austin S. Lyons, Cory D. Cress, Jeremy T. Robinson, Adam L. Friedman, James C. Culbertson, Xiqiao Wang and Justin Koepke and has published in prestigious journals such as Nature Communications, Nano Letters and ACS Nano.

In The Last Decade

Scott Schmucker

37 papers receiving 956 citations

Peers

Scott Schmucker
Yui Ogawa Japan
Ole Bethge Austria
L. Nilsson Switzerland
Isaac Childres United States
Sabina Caneva United Kingdom
Oliver Groening Switzerland
Md. Kawsar Alam Bangladesh
You Lin United States
Yui Ogawa Japan
Scott Schmucker
Citations per year, relative to Scott Schmucker Scott Schmucker (= 1×) peers Yui Ogawa

Countries citing papers authored by Scott Schmucker

Since Specialization
Citations

This map shows the geographic impact of Scott Schmucker's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Scott Schmucker with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Scott Schmucker more than expected).

Fields of papers citing papers by Scott Schmucker

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Scott Schmucker. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Scott Schmucker. The network helps show where Scott Schmucker may publish in the future.

Co-authorship network of co-authors of Scott Schmucker

This figure shows the co-authorship network connecting the top 25 collaborators of Scott Schmucker. A scholar is included among the top collaborators of Scott Schmucker based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Scott Schmucker. Scott Schmucker is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Leenheer, Andrew, Scott Schmucker, Xujiao Gao, et al.. (2025). Direct integration of atomic precision advanced manufacturing into middle-of-line silicon fabrication. Applied Physics Reviews. 12(4). 1 indexed citations
2.
Wyrick, Jonathan, Gheorghe Stan, Xiqiao Wang, et al.. (2024). Multi-scale alignment to buried atom-scale devices using Kelvin probe force microscopy. Nanotechnology Reviews. 13(1).
3.
Lu, Tzu‐Ming, Xujiao Gao, Scott Schmucker, et al.. (2021). Path Towards a Vertical TFET Enabled by Atomic Precision Advanced Manufacturing. 1 indexed citations
4.
Owen, James H. G., Andrew Baczewski, Scott Schmucker, et al.. (2021). Al-alkyls as acceptor dopant precursors for atomic-scale devices. Journal of Physics Condensed Matter. 33(46). 464001–464001. 5 indexed citations
5.
Gao, Xujiao, Tzu‐Ming Lu, Scott Schmucker, et al.. (2021). Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 102–106. 1 indexed citations
6.
Katzenmeyer, Aaron M., Andrew Baczewski, Ezra Bussmann, et al.. (2021). Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques. Journal of Micro/Nanopatterning Materials and Metrology. 20(1). 6 indexed citations
7.
Wang, Xiqiao, Jonathan Wyrick, Ranjit V. Kashid, et al.. (2020). Atomic-scale control of tunneling in donor-based devices. Communications Physics. 3(1). 24 indexed citations
8.
Mamaluy, Denis, et al.. (2020). Quantum Transport in Si:P δ-Layer Wires. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 181–184. 4 indexed citations
9.
Maurer, Leon, Andrew Baczewski, Tzu‐Ming Lu, et al.. (2020). Low thermal budget high-k/metal surface gate for buried donor-based devices. Journal of Physics Materials. 3(3). 35002–35002. 8 indexed citations
10.
Schmucker, Scott, Ranjit V. Kashid, Xiqiao Wang, et al.. (2019). Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide. Physical Review Applied. 11(3). 11 indexed citations
11.
Wyrick, Jonathan, Xiqiao Wang, Ranjit V. Kashid, et al.. (2019). Atom‐by‐Atom Fabrication of Single and Few Dopant Quantum Devices. Advanced Functional Materials. 29(52). 40 indexed citations
12.
Rossi, Jamie E., Erin R. Cleveland, Scott Schmucker, et al.. (2017). Removal of sodium dodecyl sulfate surfactant from aqueous dispersions of single-wall carbon nanotubes. Journal of Colloid and Interface Science. 495. 140–148. 29 indexed citations
13.
Friedman, Adam L., Cory D. Cress, Scott Schmucker, Jeremy T. Robinson, & O.M.J. van ‘t Erve. (2016). Electronic transport and localization in nitrogen-doped graphene devices using hyperthermal ion implantation. Physical review. B.. 93(16). 24 indexed citations
14.
Koepke, Justin, Joshua D. Wood, Yaofeng Chen, et al.. (2016). Role of Pressure in the Growth of Hexagonal Boron Nitride Thin Films from Ammonia-Borane. Chemistry of Materials. 28(12). 4169–4179. 78 indexed citations
15.
Schmucker, Scott, Cory D. Cress, James C. Culbertson, et al.. (2015). Raman signature of defected twisted bilayer graphene. Carbon. 93. 250–257. 23 indexed citations
16.
Schmucker, Scott, Navneet Kumar, John R. Abelson, et al.. (2012). Field-directed sputter sharpening for tailored probe materials and atomic-scale lithography. Nature Communications. 3(1). 935–935. 38 indexed citations
17.
Ohta, Taisuke, Jeremy T. Robinson, Scott Schmucker, et al.. (2012). Electronic hybridization of stacked graphene films.. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 1 indexed citations
18.
Xu, Yang, Kevin He, Scott Schmucker, et al.. (2011). Inducing Electronic Changes in Graphene through Silicon (100) Substrate Modification. Nano Letters. 11(7). 2735–2742. 52 indexed citations
19.
Wood, Joshua D., Scott Schmucker, Austin S. Lyons, Eric Pop, & Joseph W. Lyding. (2011). Effects of Polycrystalline Cu Substrate on Graphene Growth by Chemical Vapor Deposition. Nano Letters. 11(11). 4547–4554. 401 indexed citations
20.
Randall, John N., Joshua B. Ballard, Joseph W. Lyding, et al.. (2009). Atomic precision patterning on Si: An opportunity for a digitized process. Microelectronic Engineering. 87(5-8). 955–958. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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