David Kapolnek

4.5k citations

32 papers · 4.0k · 2 hit papers · h-index 22

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 1%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 31
- GaN-based semiconductor devices and materials 29
Electronic, Optical and Magnetic Materials 14
- Ga2O3 and related materials 14

Co-authors: Bernd P. Keller (26 shared papers)Steven P. DenBaars (25 shared papers)Stacia Keller (22 shared papers)Umesh Kumar Mishra (21 shared papers)James S. Speck (8 shared papers)Ben Heying (5 shared papers)Yifeng Wu (9 shared papers)X. H. Wu (5 shared papers)
Journals: Applied Physics Letters (9 papers)Journal of Crystal Growth (3 papers)Solid-State Electronics (3 papers)IEEE Electron Device Letters (2 papers)Electronics Letters (1 paper)
Partner nations: United States Japan Sweden

In The Last Decade

David Kapolnek

32 papers receiving 3.8k citations

David Kapolnek's Hit Papers

align trajectories log scale

Very-high power density AlGaN/GaN HEMTs 2001 · 490 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2001 IEEE Transactions on Electron Devices
1996 Applied Physics Letters

Peers

Countries citing papers authored by David Kapolnek

Since Specialization

Citations

This map shows the geographic impact of David Kapolnek's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by David Kapolnek with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites David Kapolnek more than expected).

Fields of papers citing papers by David Kapolnek

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by David Kapolnek. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by David Kapolnek. The network helps show where David Kapolnek may publish in the future.

Co-authors

The 25 scholars most cited alongside David Kapolnek, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with David Kapolnek Line = papers co-authored together David Kapolnek links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 32 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films Applied Physics Letters ·Ben Heying, Xuemei Wu, Stacia Keller, Y. Li, David Kapolnek, Bernd P. Keller, Steven P. DenBaars, James S. Speck Hit paper breakdown →	1996	759
2	Very-high power density AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·Yifeng Wu, David Kapolnek, James P. Ibbetson, Primit Parikh, Bernd P. Keller, Umesh Kumar Mishra Hit paper breakdown →	2001	490
3	Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3 Journal of Applied Physics ·X. H. Wu, L. Michael Brown, David Kapolnek, Stacia Keller, Bernd P. Keller, Steven P. DenBaars, James S. Speck	1996	392
4	Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors Applied Physics Letters ·Yuan Wu, Bernd P. Keller, Salka Keller, David Kapolnek, P. Kozodoy, Steven P. DenBaars, Umesh Kumar Mishra	1996	303
5	Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire Applied Physics Letters ·David Kapolnek, X. H. Wu, Ben Heying, Stacia Keller, Bernd P. Keller, Umesh Kumar Mishra, Steven P. DenBaars, James S. Speck	1995	292
6	Anisotropic epitaxial lateral growth in GaN selective area epitaxy Applied Physics Letters ·David Kapolnek, Stacia Keller, Rama Vetury, Robert D. Underwood, P. Kozodoy, S. P. Den Baars, Umesh Kumar Mishra	1997	270
7	Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition Applied Physics Letters ·Stacia Keller, Bernd P. Keller, Yifeng Wu, Ben Heying, David Kapolnek, James S. Speck, Umesh Kumar Mishra, Steven P. DenBaars	1996	242
8	Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN Applied Physics Letters ·X. H. Wu, David Kapolnek, E. J. Tarsa, Ben Heying, Stacia Keller, Bernd P. Keller, Umesh Kumar Mishra, Steven P. DenBaars	1996	200
9	Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V IEEE Electron Device Letters ·Yifeng Wu, Stacia Keller, P. Kozodoy, Bernd P. Keller, Primit Parikh, David Kapolnek, Steven P. DenBaars, Umesh Kumar Mishra	1997	160
10	Growth and characterization of bulk InGaN films and quantum wells Applied Physics Letters ·Salka Keller, Bernd P. Keller, David Kapolnek, Amber C. Abare, Hisashi Masui, L. A. Coldren, U. K. Mishra, S. P. Den Baars	1996	147
11	Measured microwave power performance of AlGaN/GaN MODFET IEEE Electron Device Letters ·Yifeng Wu, Bernd P. Keller, Stacia Keller, David Kapolnek, Steven P. DenBaars, Umesh Kumar Mishra	1996	122
12	Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN Journal of Electronic Materials ·Bernd P. Keller, Stacia Keller, David Kapolnek, Wei Jiang, Yuan Wu, Hisashi Masui, X. H. Wu, Ben Heying	1995	92
13	High power AlGaN/GaN HEMTs for microwave applications Solid-State Electronics ·Yifeng Wu, Bernd P. Keller, Stacia Keller, David Kapolnek, P. Kozodoy, Steven P. DenBaars, Umesh Kumar Mishra	1997	66
14	Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition Journal of Crystal Growth ·Stacia Keller, Bernd P. Keller, David Kapolnek, Umesh Kumar Mishra, Steven P. DenBaars, I. K. Shmagin, Robert M. Kolbas, Subash Krishnankutty	1997	65
15	Selective-area regrowth of GaN field emission tips Solid-State Electronics ·Robert D. Underwood, David Kapolnek, Bernd P. Keller, Stacia Keller, Steven P. DenBaars, Umesh Kumar Mishra	1997	47
16	Particulate composites from coated powders Journal of the European Ceramic Society ·David Kapolnek, Lutgard C. De Jonghe	1991	46
17	Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire Japanese Journal of Applied Physics ·Stacia Keller, David Kapolnek, Bernd P. Keller, Yifeng Wu, Benjamin Heying, James S. Speck, U.K. Mishra, Steven P. DenBaars	1996	42
18	Selective area epitaxy of GaN for electron field emission devices Journal of Crystal Growth ·David Kapolnek, Robert D. Underwood, Bernd P. Keller, Stacia Keller, Steven P. DenBaars, Umesh Kumar Mishra	1997	40
19	Low resistance ohmic contact to n-GaN with a separate layer method Solid-State Electronics ·Yifeng Wu, Wei Jiang, Bernd P. Keller, Stacia Keller, David Kapolnek, Steven P. DenBaars, Umesh Kumar Mishra, B.L.H. Wilson	1997	40
20	GaN field emitter array diode with integrated anode Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Robert D. Underwood, Salka Keller, U. K. Mishra, David Kapolnek, Bernd P. Keller, Steven P. DenBaars	1998	32

About David Kapolnek

David Kapolnek is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Mechanics of Materials and Atomic and Molecular Physics, and Optics, having authored 32 papers that have together received 4.0k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (29 papers), Ga2O3 and related materials (14 papers), Semiconductor materials and devices (12 papers), Metal and Thin Film Mechanics (8 papers), Radio Frequency Integrated Circuit Design (6 papers), Silicon Carbide Semiconductor Technologies (5 papers), ZnO doping and properties (5 papers) and Semiconductor Quantum Structures and Devices (3 papers). The work is most often cited by research in Condensed Matter Physics (3.7k citations), Electronic, Optical and Magnetic Materials (1.7k citations), Mechanics of Materials (946 citations), Materials Chemistry (1.7k citations) and Atomic and Molecular Physics, and Optics (1.0k citations). David Kapolnek has collaborated with scholars based in United States, Japan and Sweden. Frequent co-authors include Bernd P. Keller, Steven P. DenBaars, Stacia Keller, Umesh Kumar Mishra, James S. Speck, Ben Heying, Yifeng Wu, X. H. Wu, P. Kozodoy and Primit Parikh. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Solid-State Electronics, IEEE Electron Device Letters and Electronics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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David Kapolnek

David Kapolnek's Hit Papers

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About David Kapolnek

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