D. Hill

500 citations

35 papers · 317 indexed · h-index 9

Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials 14
Electrical and Electronic Engineering
- Radio Frequency Integrated Circuit Design 24
- Semiconductor materials and devices 14
- Advancements in Semiconductor Devices and Circuit Design 10
- 3D IC and TSV technologies 8
- Semiconductor Lasers and Optical Devices 4
- Advanced Power Amplifier Design 4
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 13
Electronic, Optical and Magnetic Materials
Materials Chemistry

Co-authors: W. Liu A. Khatibzadeh H.Q. Tserng J. S. Harris Hin-Fai Chau Tae‐il Kim Daniel Benevides da Costa T. Henderson
Cited by: Condensed Matter Physics Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics
Journals: Electronics Letters (3 papers)IEEE Electron Device Letters (2 papers)IEEE Transactions on Electron Devices (2 papers)
Partner nations: United States United Kingdom

In The Last Decade

D. Hill

29 papers receiving 289 citations

Peers

Countries citing papers authored by D. Hill

Since Specialization

Citations

This map shows the geographic impact of D. Hill's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Hill with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Hill more than expected).

Fields of papers citing papers by D. Hill

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Hill. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Hill. The network helps show where D. Hill may publish in the future.

Co-authorship network

The 25 scholars most cited alongside D. Hill, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Hill Line = papers co-authored together D. Hill links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	High Performance $0.25\mu\mathrm{m}$ GaN Technology with Low Memory Effects Κωνσταντινιά Φιλίππου,Zhihong Liao,明富高野,Yuchen Wei,D. Hill,Philippe Renaud,Jing Wan,Antonio M Rebollo García,M.J. Escobar,luis carlos tapajós rodrigues,Ricardo Serpe Machoski,正人鈴木,Chenqi Zhu,Humayun Kabir,禎新後閑,Harold D. Stewart,D. Ferguson,健一稲村,Peter Hu	2023	1
2	High Performance 150 mm RF GaN Technology with Low Memory Effects Karen Moore,Zhihong Liao,亦般,Antonio M Rebollo García,Philippe Renaud,M.J. Escobar,D. Hill,Chenqi Zhu,Jing Wan,J. Finder,野口悟,明富高野,禎新後閑,Sherman Tan Jun Hao,Keeton Ross,J. M. Larsen,S.S. Anusree	2020	6
3	GaN RF device technology and applications, present and future Gengyuan Liang,Karen Moore,D. Hill,Z. S. Ishmatov,Deane Madsen	2013	13
4	Characterization and thermal analysis of a 48 V GaN HFET device technology for wireless infrastructure applications Dana L. Cloud,Alien R. Nissenson,Cuihua Yin,Diana F. Gao,Karen Moore,Z. S. Ishmatov,张连关,Mohammed H. Al Zahrani,Ying-Jung Wu,D. Hill,朱安祥,C.E. Weitzel	2008	3
5	The impact of emitter fingers layout and geometry on InGaP HBT thermal resistance М. Sadykova,D. Hill,Timothy Idstein,Ying-Jung Wu	2004	0
6	Reliability implication of InGaP HBT emitter ledge dimension Welke Zum,D. Hill,C.E. Weitzel,Saura Fornero,C. Cook	2003	2
7	Thermal impact of InGaAs on InP based HBTs Arzu Gurbanova,D. Hill,Ying-Jung Wu,Kenneth L. Johnson,I Klaucke	2002	4
8	Development of Motorola's InGaP HBT Process Roland Krasser,D. Hill,Diana F. Gao,Alien R. Nissenson,Antonio M Rebollo García,Jon Abrokwah,Yaroslavna Puhach	2002	2
9	Bias stress tests of extremely high doped base HBTs T. Henderson,D. Hill	2002	1
10	Laterally etched undercut (LEU) technique to reduce base-collector capacitances in heterojunction bipolar transistors W. Liu,D. Hill,Hin-Fai Chau,Christoph A Thaiss,G. González Zapico,Образцова Оксана Андреевна	2002	7
11	1 Watt, 65% PAE K-band AlGaAs/GaAs heterojunction bipolar transistors using emitter air-bridge technology Hin-Fai Chau,D. Hill,SE Donnelly,Tae‐il Kim	2002	4
12	28 V low thermal impedance HBT with 20 W CW output power D. Hill,Tae‐il Kim	2002	4
13	Three-dimensional MMIC architecture using low thermal impedance technology D. Hill,M. Tutt,SE Donnelly,T.P. Budka,Tae‐il Kim	2002	1
14	28-V low thermal-impedance HBT with 20-W CW output power IEEE Transactions on Microwave Theory and Techniques ·D. Hill,C. Sierra	1997	15
15	Reply to "Comparison of thermal-shunt and flip-chip HBT thermal impedances: comment on novel HBT with reduced thermal impedance" IEEE Microwave and Guided Wave Letters ·D. Hill,A. Khatibzadeh,W. Liu,E. D. Hansing,J.M.Y. Or	1996	1
16	AlGaAs/GaAs Pnp HBT with 54 GHz f/sub max/ and application to high-performance complementary technology IEEE Transactions on Electron Devices ·D. Hill,C. Sierra,H.Q. Tserng	1993	4
17	High-performance microwave AlGaAs-InGaAs Pnp HBT with high-DC current gain IEEE Microwave and Guided Wave Letters ·W. Liu,D. Hill,Daniel Benevides da Costa,J. S. Harris	1992	8
18	High frequency Pnp AlGaAs/InGaAs heterojunction bipolar transistor with an ultrathin strained base Electronics Letters ·José Andrés Márquez Frías,D. Hill,Daniel Benevides da Costa,J. S. Harris	1990	6
19	Uniform, high-gain AlGaAs/In/sub 0.05/Ga/sub 0.95/As/GaAs P-n-p heterojunction bipolar transistors by dual selective etch process IEEE Electron Device Letters ·D. Hill,British Journal of Nursing,Ting Ma,J. S. Harris	1990	6
20	AlGaAs/GaInAs strained-base pnp heterojunction bipolar transistors Electronics Letters ·D. Hill,British Journal of Nursing,Ting Ma,J. S. Harris	1989	7

About D. Hill

D. Hill is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering and Infectious Diseases, having authored 35 papers that have together received 317 indexed citations. Recurring topics across this work include Radio Frequency Integrated Circuit Design (24 papers), GaN-based semiconductor devices and materials (14 papers), Semiconductor materials and devices (14 papers), Semiconductor Quantum Structures and Devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers), 3D IC and TSV technologies (8 papers), Semiconductor Lasers and Optical Devices (4 papers) and Advanced Power Amplifier Design (4 papers). The work is most often cited by research in Condensed Matter Physics (84 citations), Electrical and Electronic Engineering (302 citations), Atomic and Molecular Physics, and Optics (121 citations), Electronic, Optical and Magnetic Materials (10 citations) and Materials Chemistry (21 citations). D. Hill has collaborated with scholars based in United States and United Kingdom. Frequent co-authors include W. Liu, A. Khatibzadeh, H.Q. Tserng, J. S. Harris, Hin-Fai Chau, Tae‐il Kim, Daniel Benevides da Costa, T. Henderson, K.L. Lear and Ting Ma. Their work appears in journals such as Electronics Letters, IEEE Electron Device Letters, IEEE Transactions on Electron Devices, IEEE Transactions on Microwave Theory and Techniques and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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