W. Lerch

985 total citations
74 papers, 783 citations indexed

About

W. Lerch is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, W. Lerch has authored 74 papers receiving a total of 783 indexed citations (citations by other indexed papers that have themselves been cited), including 70 papers in Electrical and Electronic Engineering, 32 papers in Atomic and Molecular Physics, and Optics and 12 papers in Materials Chemistry. Recurrent topics in W. Lerch's work include Silicon and Solar Cell Technologies (54 papers), Integrated Circuits and Semiconductor Failure Analysis (39 papers) and Semiconductor materials and interfaces (31 papers). W. Lerch is often cited by papers focused on Silicon and Solar Cell Technologies (54 papers), Integrated Circuits and Semiconductor Failure Analysis (39 papers) and Semiconductor materials and interfaces (31 papers). W. Lerch collaborates with scholars based in Germany, France and United Kingdom. W. Lerch's co-authors include S. Paul, F. Cristiano, X. Hebras, Andreas Heinz, Richard Heimrath, N. A. Stolwijk, A. Claverie, D. Bolze, N. Cherkashin and H. Bracht and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

W. Lerch

70 papers receiving 751 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
W. Lerch Germany	15	643	303	178	135	76	74	783
P. Engelhart Germany	14	914 1.4×	283 0.9×	229 1.3×	60 0.4×	68 0.9×	32	976
W. Rzodkiewicz Poland	11	229 0.4×	92 0.3×	162 0.9×	28 0.2×	65 0.9×	50	393
Hemi H. Gandhi United States	8	299 0.5×	174 0.6×	185 1.0×	310 2.3×	214 2.8×	14	649
Yoshiji Miyamura Japan	15	497 0.8×	122 0.4×	268 1.5×	42 0.3×	110 1.4×	65	581
S. Saadaoui Saudi Arabia	13	231 0.4×	161 0.5×	122 0.7×	42 0.3×	97 1.3×	50	432
S. Janz Germany	21	1.2k 1.8×	297 1.0×	753 4.2×	47 0.3×	304 4.0×	130	1.3k
Francesca Ferrazza Italy	8	843 1.3×	221 0.7×	380 2.1×	36 0.3×	245 3.2×	24	984
G. Kissinger Germany	13	591 0.9×	204 0.7×	240 1.3×	52 0.4×	108 1.4×	105	677
Fiacre Rougieux Australia	23	1.4k 2.2×	613 2.0×	351 2.0×	39 0.3×	64 0.8×	100	1.5k

Countries citing papers authored by W. Lerch

Since Specialization

Citations

This map shows the geographic impact of W. Lerch's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Lerch with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Lerch more than expected).

Fields of papers citing papers by W. Lerch

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Lerch. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Lerch. The network helps show where W. Lerch may publish in the future.

Co-authorship network of co-authors of W. Lerch

This figure shows the co-authorship network connecting the top 25 collaborators of W. Lerch. A scholar is included among the top collaborators of W. Lerch based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Lerch. W. Lerch is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Ladas, S., et al.. (2011). An X-ray photoelectron spectroscopy study of ultra-thin oxynitride films. Thin Solid Films. 520(2). 871–875. 16 indexed citations

Bennett, Nick S., N. E. B. Cowern, S. Paul, et al.. (2008). Vacancy engineering for highly activated ‘diffusionless’ boron doping in bulk silicon. View. 59. 290–293.

Paul, S., W. Lerch, John D. Chan, et al.. (2008). Optimum activation and diffusion with a combination of spike and flash annealing. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 26(1). 293–297. 2 indexed citations

Bracht, H., J. Lundsgaard Hansen, A. Nylandsted Larsen, et al.. (2008). Simultaneous diffusion of Si and Ge in isotopically controlled heterostructures. Materials Science in Semiconductor Processing. 11(5-6). 378–383. 19 indexed citations

Lerch, W., S. Paul, S. McCoy, et al.. (2008). Advanced activation trends for boron and arsenic by combinations of single, multiple flash anneals and spike rapid thermal annealing. Materials Science and Engineering B. 154-155. 3–13. 12 indexed citations

Cristiano, F., et al.. (2008). Evidence of the carrier mobility degradation in highly B-doped ultra-shallow junctions by Hall effect measurements. Materials Science and Engineering B. 154-155. 225–228. 4 indexed citations

Lerch, W., S. Paul, S. McCoy, et al.. (2007). Advanced Activation and Deactivation of Arsenic-Implanted Ultra-Shallow Junctions using Flash and Spike + Flash Annealing. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 191–196. 6 indexed citations

Cristiano, F., Simona Boninelli, N. Cherkashin, et al.. (2006). Defects evolution and dopant activation anomalies in ion implanted silicon. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 253(1-2). 68–79. 11 indexed citations

Borland, John, W. Krull, D. C. Jacobson, et al.. (2006). 45nm Node p+ USJ Formation With High Dopant Activation And Low Damage. 4–9. 7 indexed citations

10.

Lerch, W., et al.. (2005). Deactivation of Solid Phase Epitaxy-Activated Boron Ultrashallow Junctions. Journal of The Electrochemical Society. 152(10). G787–G787. 10 indexed citations

11.

Cowern, N. E. B., B. Colombeau, J. D. Benson, et al.. (2005). Mechanisms of B deactivation control by F co-implantation. Applied Physics Letters. 86(10). 55 indexed citations

12.

Timans, P. J., et al.. (2004). Challenges for ultra-shallow junction formation technologies beyond the 90 nm node. 17–33. 15 indexed citations

13.

Paul, S., et al.. (2004). Mainstream rapid thermal processing for source–drain engineering from first applications to latest results. Materials Science and Engineering B. 114-115. 141–150. 5 indexed citations

14.

Colombeau, B., A. J. Smith, N. E. B. Cowern, et al.. (2004). Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions: interstitial transport and F co-implant control. 73. 971–974. 6 indexed citations

15.

Cowern, N. E. B., B. Colombeau, F. Roozeboom, et al.. (2002). Diffusion Suppression in Silicon by Substitutional C Doping. 203–206. 3 indexed citations

16.

Glück, Michael, et al.. (1999). Challenges and current status in 300 mm rapid thermal processing. Microelectronic Engineering. 45(2-3). 237–246. 4 indexed citations

17.

Lerch, W., et al.. (1998). Temperature measurement of wafers with varying multilayer structures during rapid thermal annealing. IEEE Transactions on Semiconductor Manufacturing. 11(4). 598–606. 3 indexed citations

18.

Lerch, W.. (1996). Ion Implantation and Rapid Thermal Annealing in Synergy for Shallow Junction Formation. physica status solidi (a). 158(1). 117–136. 8 indexed citations

19.

Lerch, W., et al.. (1991). Combined application of spreading-resistance and electron-microprobe depth profiling on GaAs:Zn and Si:P. Applied Surface Science. 50(1-4). 470–474. 11 indexed citations

20.

Lerch, W., et al.. (1967). Design and Performance of Low-Oil Content Circuit Breakers. IEEE Transactions on Power Apparatus and Systems. PAS-86(10). 1242–1249. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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