C.L. Chan

420 total citations
26 papers, 347 citations indexed

About

C.L. Chan is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, C.L. Chan has authored 26 papers receiving a total of 347 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 6 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in C.L. Chan's work include Semiconductor materials and devices (23 papers), Silicon Carbide Semiconductor Technologies (11 papers) and Ferroelectric and Negative Capacitance Devices (9 papers). C.L. Chan is often cited by papers focused on Semiconductor materials and devices (23 papers), Silicon Carbide Semiconductor Technologies (11 papers) and Ferroelectric and Negative Capacitance Devices (9 papers). C.L. Chan collaborates with scholars based in Hong Kong, China and Canada. C.L. Chan's co-authors include P. T. Lai, Jing-Ping Xu, Yuhua Cheng, J.P. Xu, Supratic Chakraborty, I. Shih, Jing Xu, Xuecheng Zou, Bin Li and J.K.O. Sin and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

C.L. Chan

26 papers receiving 337 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C.L. Chan Hong Kong 12 343 90 84 44 23 26 347
Taeko Ikarashi Japan 13 319 0.9× 172 1.9× 99 1.2× 25 0.6× 10 0.4× 24 373
Mats O. Andersson Sweden 12 340 1.0× 79 0.9× 97 1.2× 30 0.7× 7 0.3× 20 358
G. Pant United States 14 417 1.2× 135 1.5× 43 0.5× 32 0.7× 6 0.3× 17 428
D. T. Krick United States 7 473 1.4× 303 3.4× 75 0.9× 47 1.1× 17 0.7× 11 491
D. W. Ormond United States 6 271 0.8× 110 1.2× 36 0.4× 41 0.9× 19 0.8× 9 301
E. Rije Germany 9 312 0.9× 165 1.8× 127 1.5× 39 0.9× 4 0.2× 12 370
Cornelius Menezes Mexico 9 337 1.0× 264 2.9× 78 0.9× 13 0.3× 18 0.8× 14 388
Y. Ma United States 9 307 0.9× 147 1.6× 37 0.4× 37 0.8× 11 0.5× 17 320
Woon-Il Choi South Korea 6 321 0.9× 193 2.1× 24 0.3× 39 0.9× 4 0.2× 14 382
T.S. Jeon United States 11 517 1.5× 223 2.5× 50 0.6× 53 1.2× 20 0.9× 15 538

Countries citing papers authored by C.L. Chan

Since Specialization
Citations

This map shows the geographic impact of C.L. Chan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C.L. Chan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C.L. Chan more than expected).

Fields of papers citing papers by C.L. Chan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C.L. Chan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C.L. Chan. The network helps show where C.L. Chan may publish in the future.

Co-authorship network of co-authors of C.L. Chan

This figure shows the co-authorship network connecting the top 25 collaborators of C.L. Chan. A scholar is included among the top collaborators of C.L. Chan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C.L. Chan. C.L. Chan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Xu, Jing-Ping, et al.. (2009). Optimization of N content for Higk-k LaTiON gate dielectric of Ge MOS capacitor. The HKU Scholars Hub (University of Hong Kong). 225–228. 1 indexed citations
3.
Xu, J.P., et al.. (2009). Comparative Study of HfTa-based gate-dielectric Ge metal–oxide–semiconductor capacitors with and without AlON interlayer. Applied Physics A. 99(1). 177–180. 16 indexed citations
4.
5.
Zou, Xiao Ping, et al.. (2008). Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric. Microelectronics Reliability. 48(4). 526–530. 19 indexed citations
6.
Xu, Jing, et al.. (2008). Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet–NO Ge-surface pretreatment. Applied Physics A. 94(2). 419–422. 3 indexed citations
8.
Yang, B. L., et al.. (2005). Kinetics of Thermal Oxidation of 6H Silicon Carbide in Oxygen Plus Trichloroethylene. Journal of The Electrochemical Society. 152(6). G441–G441. 4 indexed citations
9.
Lai, P. T., Jing-Ping Xu, Haochen Wu, & C.L. Chan. (2004). Interfacial properties and reliability of SiO 2 grown on 6H-SiC in dry O 2 plus trichloroethylene. Microelectronics Reliability. 44(4). 577–580. 11 indexed citations
10.
Lai, P. T., et al.. (2004). Improved interfacial properties of SiO2 grown on 6H-SiC in diluted NO. Applied Physics A. 81(1). 159–161. 3 indexed citations
11.
Xu, Jing-Ping, P. T. Lai, Haochen Wu, & C.L. Chan. (2004). Effects of chlorine on interfacial properties and reliability of SiO2 grown on 6H-SiC. Applied Physics A. 81(1). 173–176. 8 indexed citations
12.
Xu, Jinjin, et al.. (2003). Improved hydrogen-sensitive properties of MISiC Schottky sensor with thin NO-grown oxynitride as gate insulator. IEEE Electron Device Letters. 24(1). 13–15. 18 indexed citations
13.
Xu, Jing-Ping, P. T. Lai, & C.L. Chan. (2003). Steam-induced interface improvement of N2O-nitrided SiO2 grown on 6H–SiC. Solid-State Electronics. 47(8). 1397–1400. 8 indexed citations
14.
Chakraborty, Supratic, P. T. Lai, C.L. Chan, & Yuan‐Chung Cheng. (2002). Interface properties of N/sub 2/O-annealed SiO/sub 2//SiC system. 108–111. 1 indexed citations
15.
Xu, Jing-Ping, et al.. (2000). Improved performance and reliability of N2O-grown oxynitride on 6H-SiC. IEEE Electron Device Letters. 21(6). 298–300. 35 indexed citations
16.
Lai, P. T., Supratic Chakraborty, C.L. Chan, & Yuhua Cheng. (2000). Effects of nitridation and annealing on interface properties of thermally oxidized SiO2/SiC metal–oxide–semiconductor system. Applied Physics Letters. 76(25). 3744–3746. 52 indexed citations
17.
Lai, P. T., Bin Li, C.L. Chan, & J.K.O. Sin. (1999). Spreading-resistance temperature sensor on silicon-on-insulator. IEEE Electron Device Letters. 20(11). 589–591. 19 indexed citations
18.
Lai, P. T., et al.. (1998). Spreading-Resistance Temperature Sensor on SOI. The HKU Scholars Hub (University of Hong Kong). 58. 148–151. 2 indexed citations
19.
Chan, C.L. & I. Shih. (1990). Al/p-CuInSe2 metal-semiconductor contacts. Journal of Applied Physics. 68(1). 156–160. 19 indexed citations
20.
Chan, C.L. & I. Shih. (1990). Extended Goodman model for series resistance masking on bulky semiconductor junction capacitance. Journal of Applied Physics. 67(10). 6544–6547. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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