J.P. Xu

577 citations

55 papers · 479 · h-index 14

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Integrated Circuits and Semiconductor Failure Analysis
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 48
- Semiconductor materials and devices 42
- Ferroelectric and Negative Capacitance Devices 25
- Advanced Memory and Neural Computing 16
- Advancements in Semiconductor Devices and Circuit Design 15
Materials Chemistry 15
- Electronic and Structural Properties of Oxides 6
- Ferroelectric and Piezoelectric Materials 5
- 2D Materials and Applications 4

Co-authors: P. T. Lai (41 shared papers)Wing Man Tang (20 shared papers)C.L. Chan (5 shared papers)Lu Liu (11 shared papers)Ming Wen (3 shared papers)Xuecheng Zou (2 shared papers)Chi Hong Leung (5 shared papers)Yong Huang (8 shared papers)
Journals: IEEE Transactions on Electron Devices (11 papers)Applied Physics Letters (7 papers)Microelectronics Reliability (5 papers)Thin Solid Films (3 papers)IEEE Electron Device Letters (3 papers)
Partner nations: China Hong Kong

In The Last Decade

J.P. Xu

52 papers receiving 463 citations

Peers

Countries citing papers authored by J.P. Xu

Since Specialization

Citations

This map shows the geographic impact of J.P. Xu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.P. Xu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.P. Xu more than expected).

Fields of papers citing papers by J.P. Xu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.P. Xu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.P. Xu. The network helps show where J.P. Xu may publish in the future.

Co-authors

The 25 scholars most cited alongside J.P. Xu, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.P. Xu Line = papers co-authored together J.P. Xu links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 55 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Improved electrical properties of Germanium MOS capacitors with gate dielectric grown in wet-NO ambient IEEE Electron Device Letters ·J.P. Xu, P. T. Lai, C.X. Li, Xuecheng Zou, C.L. Chan	2006	42
2	Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high-k HfO2 gate dielectric by using La2O3 interlayer sputtered with/without N2 ambient Applied Physics Letters ·H.X. Xu, J.P. Xu, C. X. Li, P. T. Lai	2010	28
3	Electrical Properties of HfTiON Gate-Dielectric GaAs Metal-Oxide-Semiconductor Capacitor With AlON as Interlayer IEEE Transactions on Electron Devices ·Lisheng Wang, Lu Liu, J.P. Xu, Shuyan Zhu, (unknown), P. T. Lai	2014	25
4	Improved Electrical Performance of Multilayer MoS₂ Transistor With NH₃-Annealed ALD HfTiO Gate Dielectric IEEE Transactions on Electron Devices ·Ming Wen, J.P. Xu, Lu Liu, P. T. Lai, Wing Man Tang	2017	23
5	Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric Solid-State Electronics ·C.X. Li, Chi Hong Leung, P. T. Lai, J.P. Xu	2010	21
6	Termination of early pregnancy in the scarred uterus with mifepristone and misoprostol International Journal of Gynecology & Obstetrics ·J.P. Xu, Hui Chen, Tingbin Ma, Xiaodi Wu	2001	20
7	Improved Interfacial Properties of Ge MOS Capacitor With High-k Dielectric by Using TaON/GeON Dual Interlayer IEEE Electron Device Letters ·F. Ji, J.P. Xu, P. T. Lai, C. X. Li, J. G. Liu	2010	20
8	Electrical properties of Ge metal-oxide-semiconductor capacitors with La2O3 gate dielectric annealed in different ambient Thin Solid Films ·H.X. Xu, J.P. Xu, C.X. Li, P. T. Lai	2010	20
9	Improved Electrical Properties of Ge p-MOSFET With $ \hbox{HfO}_{2}$ Gate Dielectric by Using $\hbox{TaO}_{x} \hbox{N}_{y}$ Interlayer IEEE Electron Device Letters ·J.P. Xu, Xue‐Feng Zhang, C.X. Li, P. T. Lai, C.L. Chan	2008	20
10	Effects of annealing on electrical performance of multilayer MoS₂ transistors with atomic layer deposited HfO₂ gate dielectric Applied Physics Express ·Ming Wen, J.P. Xu, Lu Liu, Pui-To Lai, Wing Man Tang	2016	18
11	Comparative Study of HfTa-based gate-dielectric Ge metal–oxide–semiconductor capacitors with and without AlON interlayer Applied Physics A ·J.P. Xu, Xiaoxue Zhang, C. X. Li, C.L. Chan, P. T. Lai	2009	16
12	Passivation of oxide traps and interface states in GaAs metal-oxide-semiconductor capacitor by LaTaON passivation layer and fluorine incorporation Applied Physics Letters ·L. N. Liu, H. W. Choi, J.P. Xu, P. T. Lai	2015	15
13	Impacts of Ti on electrical properties of Ge metal–oxide–semiconductor capacitors with ultrathin high-k LaTiON gate dielectric Applied Physics A ·H.X. Xu, J.P. Xu, C. X. Li, C.L. Chan, P. T. Lai	2010	15
14	A micro channel integrated gas flow sensor for high sensitivity Bolin Yu, Zhiyin Gan, Shu Cao, J.P. Xu, Sheng Liu	2008	14
15	Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH3-plasma treated yittrium-oxynitride as interfacial passivation layer Microelectronics Reliability ·H.H. Lu, J.P. Xu, L. Liu, Lishi Wang, P. T. Lai, Wing Man Tang	2015	13
16	Plasma-Nitrided Ga₂O₃(Gd₂O₃) as Interfacial Passivation Layer for InGaAs Metal–Oxide– Semiconductor Capacitor With HfTiON Gate Dielectric IEEE Transactions on Electron Devices ·Li-Sheng Wang, J.P. Xu, Lu Liu, Han‐Han Lu, P. T. Lai, Wing Man Tang	2015	12
17	Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y2O3 films Applied Physics Letters ·Xiaodong Huang, L. Liu, J.P. Xu, P. T. Lai	2011	11
18	Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer IEEE Transactions on Electron Devices ·Han‐Han Lu, Lu Liu, J.P. Xu, P. T. Lai, Wing Man Tang	2017	11
19	GaAs Metal–Oxide–Semiconductor Capacitor With Nd-Based High-k Oxynitrides as Gate Dielectric and Passivation Layer IEEE Transactions on Electron Devices ·L. N. Liu, H. W. Choi, J.P. Xu, Wing Man Tang, P. T. Lai	2017	9
20	Impact of Nitrogen Incorporation on the Interface Between Ge and La₂O₃ or Y₂O₃ Gate Dielectric: A Study on the Formation of Germanate IEEE Transactions on Electron Devices ·Zhixiang Cheng, Lu Liu, J.P. Xu, Yong Huang, P. T. Lai, Wing Man Tang	2016	8

About J.P. Xu

J.P. Xu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Biomedical Engineering and Pediatrics, Perinatology and Child Health, having authored 55 papers that have together received 479 indexed citations. Recurring topics across this work include Semiconductor materials and devices (42 papers), Ferroelectric and Negative Capacitance Devices (25 papers), Advanced Memory and Neural Computing (16 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers), Semiconductor materials and interfaces (11 papers), Electronic and Structural Properties of Oxides (6 papers), Ferroelectric and Piezoelectric Materials (5 papers) and 2D Materials and Applications (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (423 citations), Atomic and Molecular Physics, and Optics (129 citations), Materials Chemistry (132 citations), Bioengineering (13 citations) and Electronic, Optical and Magnetic Materials (29 citations). J.P. Xu has collaborated with scholars based in China and Hong Kong. Frequent co-authors include P. T. Lai, Wing Man Tang, C.L. Chan, Lu Liu, Ming Wen, Xuecheng Zou, Chi Hong Leung, Yong Huang, Lu Liu and H. W. Choi. Their work appears in journals such as IEEE Transactions on Electron Devices, Applied Physics Letters, Microelectronics Reliability, Thin Solid Films and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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