J.P. Xu

578 total citations
58 papers, 475 citations indexed

About

J.P. Xu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J.P. Xu has authored 58 papers receiving a total of 475 indexed citations (citations by other indexed papers that have themselves been cited), including 50 papers in Electrical and Electronic Engineering, 14 papers in Materials Chemistry and 11 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J.P. Xu's work include Semiconductor materials and devices (42 papers), Ferroelectric and Negative Capacitance Devices (25 papers) and Advanced Memory and Neural Computing (16 papers). J.P. Xu is often cited by papers focused on Semiconductor materials and devices (42 papers), Ferroelectric and Negative Capacitance Devices (25 papers) and Advanced Memory and Neural Computing (16 papers). J.P. Xu collaborates with scholars based in China, Hong Kong and Malaysia. J.P. Xu's co-authors include P. T. Lai, Wing Man Tang, C.L. Chan, Lu Liu, Xuecheng Zou, Ming Wen, Chi Hong Leung, Yong Huang, Lu Liu and H. W. Choi and has published in prestigious journals such as Applied Physics Letters, Scientific Reports and Construction and Building Materials.

In The Last Decade

J.P. Xu

53 papers receiving 448 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J.P. Xu China 14 420 129 128 29 27 58 475
C. Guasch France 11 330 0.8× 90 0.7× 290 2.3× 26 0.9× 29 1.1× 22 404
C.L. Chan Hong Kong 12 343 0.8× 84 0.7× 90 0.7× 44 1.5× 20 0.7× 26 347
Hyeon-Seag Kim United States 4 420 1.0× 97 0.8× 211 1.6× 52 1.8× 17 0.6× 6 460
Taeko Ikarashi Japan 13 319 0.8× 99 0.8× 172 1.3× 25 0.9× 39 1.4× 24 373
Simona Lorenti Italy 10 297 0.7× 71 0.6× 186 1.5× 39 1.3× 79 2.9× 30 336
Asuha Japan 13 453 1.1× 109 0.8× 263 2.1× 17 0.6× 56 2.1× 16 473
G. Pant United States 14 417 1.0× 43 0.3× 135 1.1× 32 1.1× 39 1.4× 17 428
T. Asar Türkiye 12 311 0.7× 233 1.8× 205 1.6× 22 0.8× 52 1.9× 28 382
Ruiyun He China 12 196 0.5× 196 1.5× 101 0.8× 21 0.7× 81 3.0× 23 326
V. Dhandapani United States 6 555 1.3× 114 0.9× 128 1.0× 43 1.5× 20 0.7× 10 575

Countries citing papers authored by J.P. Xu

Since Specialization
Citations

This map shows the geographic impact of J.P. Xu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.P. Xu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.P. Xu more than expected).

Fields of papers citing papers by J.P. Xu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.P. Xu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.P. Xu. The network helps show where J.P. Xu may publish in the future.

Co-authorship network of co-authors of J.P. Xu

This figure shows the co-authorship network connecting the top 25 collaborators of J.P. Xu. A scholar is included among the top collaborators of J.P. Xu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.P. Xu. J.P. Xu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lu, Jiahao, et al.. (2025). Development of HEK293T cell reference materials for β-thalassemia genetic testing using prime editing. Turkish Journal of Biochemistry. 50(2). 213–222.
2.
3.
Xu, J.P., et al.. (2025). Internal and external synergistic CO2 capture of cement-based materials using modified biochar. Construction and Building Materials. 489. 140696–140696. 3 indexed citations
4.
Fan, Fulin, et al.. (2025). Coordination and planning of offshore wind hydrogen production systems: A case study in South Wales. International Journal of Hydrogen Energy. 111. 52–62. 2 indexed citations
5.
6.
Li, Nan, Xucheng Dong, J.P. Xu, et al.. (2025). Influence of Polyvinylpyrrolidone and Cassava Starch on the Formation Kinetics of CO2 Hydrate. Energy & Fuels. 39(16). 7766–7780. 1 indexed citations
7.
Xu, J.P., Chunxu Mao, & Xiu Yin Zhang. (2024). Multifunctional Radio Frequency Device With Integrated Dual-Polarized Antenna, Filters, and Power Combiners for Base-Station Applications. IEEE Antennas and Wireless Propagation Letters. 24(3). 681–685.
8.
9.
Xu, J.P., et al.. (2018). Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor with LaTaON Gate Dielectric by Optimizing Ta Content. Chinese Physics Letters. 35(7). 77302–77302. 1 indexed citations
10.
Huang, Yong, J.P. Xu, Lu Liu, et al.. (2017). Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor by Using TaYON Interfacial Passivation Layer and Fluorine Incorporation. IEEE Transactions on Electron Devices. 64(9). 3528–3533. 6 indexed citations
11.
Choi, H. W., et al.. (2017). GaAs Metal–Oxide–Semiconductor Capacitor With Nd-Based High-k Oxynitrides as Gate Dielectric and Passivation Layer. IEEE Transactions on Electron Devices. 65(1). 72–78. 9 indexed citations
12.
Xu, J.P., et al.. (2017). Improved Interfacial and Electrical Properties of GaAs Metal–Oxide–Semiconductor Capacitor by Using Fluorine-Plasma-Treated Interfacial Passivation Layer. IEEE Transactions on Device and Materials Reliability. 17(2). 458–462. 4 indexed citations
13.
Xu, J.P., et al.. (2017). Electrical and Interfacial Properties of GaAs MOS Capacitors With La-Doped ZrON as Interfacial Passivation Layer. IEEE Transactions on Electron Devices. 64(5). 2179–2184. 8 indexed citations
14.
Cheng, Zhixiang, Lu Liu, J.P. Xu, et al.. (2016). Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate. IEEE Transactions on Electron Devices. 63(12). 4888–4892. 7 indexed citations
15.
Cheng, Zhixiang, et al.. (2016). Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer. Applied Physics Letters. 109(2). 5 indexed citations
16.
17.
Leung, Chi Hong, et al.. (2010). Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric. Solid-State Electronics. 54(7). 675–679. 21 indexed citations
18.
Xu, J.P., et al.. (2006). A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer. Microelectronics Reliability. 47(2-3). 391–394. 8 indexed citations
19.
Xu, J.P., et al.. (2004). Fetal origin of single nucleated erythroblasts and free DNA in the peripheral blood of pregnant women. International Journal of Gynecology & Obstetrics. 85(1). 1–5. 7 indexed citations
20.
Xu, J.P., et al.. (2001). Termination of early pregnancy in the scarred uterus with mifepristone and misoprostol. International Journal of Gynecology & Obstetrics. 72(3). 245–251. 20 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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