C.F. Tsang

682 total citations
31 papers, 608 citations indexed

About

C.F. Tsang is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, C.F. Tsang has authored 31 papers receiving a total of 608 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 15 papers in Electronic, Optical and Magnetic Materials and 9 papers in Materials Chemistry. Recurrent topics in C.F. Tsang's work include Copper Interconnects and Reliability (13 papers), Semiconductor materials and devices (13 papers) and Advancements in Battery Materials (5 papers). C.F. Tsang is often cited by papers focused on Copper Interconnects and Reliability (13 papers), Semiconductor materials and devices (13 papers) and Advancements in Battery Materials (5 papers). C.F. Tsang collaborates with scholars based in Singapore, United States and Japan. C.F. Tsang's co-authors include Arumugam Manthiram, J. Kim, Hui Kim Hui, Yi Su, Jaekook Kim, Vladimir Bliznetsov, D. J. Wolford, Jens Martinsen, G. D. Gilliland and J. A. Bradley and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Journal of Materials Chemistry.

In The Last Decade

C.F. Tsang

31 papers receiving 582 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C.F. Tsang Singapore 12 398 234 231 211 67 31 608
Isabelle Martin‐Litas France 8 446 1.1× 136 0.6× 59 0.3× 198 0.9× 75 1.1× 10 627
Yu. М. Solonin Ukraine 13 217 0.5× 142 0.6× 110 0.5× 498 2.4× 95 1.4× 63 658
Ying Pang China 13 709 1.8× 79 0.3× 178 0.8× 288 1.4× 69 1.0× 14 952
Hyung‐Sang Park South Korea 17 586 1.5× 146 0.6× 421 1.8× 395 1.9× 36 0.5× 38 886
W. H. Smyrl United States 10 401 1.0× 302 1.3× 170 0.7× 177 0.8× 26 0.4× 16 593
J. Pfeifer Hungary 14 434 1.1× 290 1.2× 42 0.2× 236 1.1× 60 0.9× 30 609
Weiqiang Ji China 8 463 1.2× 126 0.5× 241 1.0× 325 1.5× 51 0.8× 8 726
Lidia Adamczyk Poland 12 133 0.3× 180 0.8× 64 0.3× 252 1.2× 39 0.6× 32 420
James S. Daubert United States 7 363 0.9× 81 0.3× 109 0.5× 175 0.8× 35 0.5× 8 494
Barbara Laïk France 17 771 1.9× 123 0.5× 321 1.4× 290 1.4× 68 1.0× 31 921

Countries citing papers authored by C.F. Tsang

Since Specialization
Citations

This map shows the geographic impact of C.F. Tsang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C.F. Tsang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C.F. Tsang more than expected).

Fields of papers citing papers by C.F. Tsang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C.F. Tsang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C.F. Tsang. The network helps show where C.F. Tsang may publish in the future.

Co-authorship network of co-authors of C.F. Tsang

This figure shows the co-authorship network connecting the top 25 collaborators of C.F. Tsang. A scholar is included among the top collaborators of C.F. Tsang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C.F. Tsang. C.F. Tsang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Teh, W. H., C.F. Tsang, Rakesh Kumar, et al.. (2006). Adhesion Studies of Ta∕Low-k (Black Diamond) Interface using Thermocompressive Wafer Bonding and Four-Point Bend. Journal of The Electrochemical Society. 153(9). G795–G795. 7 indexed citations
2.
Leong, Wai Yie, et al.. (2005). Effects of plasma treatments on structural and electrical properties of methyl-doped silicon oxide low dielectric constant film. Thin Solid Films. 496(2). 402–411. 4 indexed citations
3.
Tsang, C.F., et al.. (2004). A study of post-etch wet clean on electrical and reliability performance of Cu/low k interconnections. Microelectronics Reliability. 45(3-4). 517–525. 9 indexed citations
4.
Tsang, C.F., C.Y. Li, Ahila Krishnamoorthy, et al.. (2004). Impact of barrier deposition process on electrical and reliability performance of Cu/CVD low k SiOCH metallization. Microelectronics Journal. 35(9). 693–700. 1 indexed citations
7.
Tsang, C.F., Yi Su, & Vladimir Bliznetsov. (2004). Comparative studies of physical and chemical properties of plasma-treated CVD low k SiOCH dielectrics. Thin Solid Films. 462-463. 269–274. 7 indexed citations
8.
Tsang, C.F., et al.. (2004). Improved dense via yields of Cu/CVD low k Coral™ dual damascene metallization at post Cu cap etch wet clean. Microelectronic Engineering. 75(4). 433–442. 1 indexed citations
9.
Balakumar, S., et al.. (2004). Enhancement of adhesion strength of Cu layer on single and multi-layer dielectric film stack in Cu/low k multi-level interconnects. Microelectronic Engineering. 75(2). 183–193. 4 indexed citations
10.
Li, H.Y., C.Y. Li, Yi Su, & C.F. Tsang. (2004). Impact of barrier metal on electrical performance of Cu/low K (Black Diamond™) in 0.13μm dual damascene interconnection. Thin Solid Films. 462-463. 245–249. 2 indexed citations
11.
Tsang, C.F. & Hui Kim Hui. (2001). An alternative method to the curing study of polymeric die attach adhesives using dynamic mechanical analysis. Thermochimica Acta. 367-368. 169–175. 6 indexed citations
12.
Tsang, C.F., et al.. (2001). Chemical and morphological studies of plasma-treated integrated circuit bond pads. Journal of Electronic Materials. 30(3). 275–282. 1 indexed citations
13.
Tsang, C.F. & Hui Kim Hui. (2000). Evaluation of copper thin film on SiO2/Si substrates by dynamic ultramicroindentation, SEM and AFM. Surface and Interface Analysis. 29(11). 735–742. 5 indexed citations
14.
Gopalakrishnan, R., et al.. (2000). An investigation on the plasma treatment of integrated circuit bond pads. Microelectronics Reliability. 40(7). 1199–1206. 18 indexed citations
15.
Tsang, C.F., J. Kim, & Arumugam Manthiram. (1998). Synthesis of Manganese Oxides by Reduction of KMnO4with KBH4in Aqueous Solutions. Journal of Solid State Chemistry. 137(1). 28–32. 55 indexed citations
16.
Tsang, C.F. & Arumugam Manthiram. (1997). Synthesis of Nanocrystalline  VO 2 and Its Electrochemical Behavior in Lithium Batteries. Journal of The Electrochemical Society. 144(2). 520–524. 180 indexed citations
17.
Tsang, C.F. & Arumugam Manthiram. (1997). Synthesis of lower-valent molybdenum oxides in aqueous solutions by reducing Na2MoO4 with NaBH4. Journal of Materials Chemistry. 7(6). 1003–1006. 28 indexed citations
18.
Tsang, C.F., et al.. (1997). Reduction of Aqueous Na2WO4 by NaBH4 at Ambient Temperatures To Obtain Lower Valent Tungsten Oxides. Inorganic Chemistry. 36(10). 2206–2210. 44 indexed citations
20.
Wolford, D. J., G. D. Gilliland, T. F. Kuech, et al.. (1994). Comparison of transport, recombination, and interfacial quality in molecular beam epitaxy and organometallic vapor-phase epitaxy GaAs/AlxGa1−xAs structures. Applied Physics Letters. 64(11). 1416–1418. 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026