G.Y. Yeom

3.5k total citations
223 papers, 3.0k citations indexed

About

G.Y. Yeom is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Mechanics of Materials. According to data from OpenAlex, G.Y. Yeom has authored 223 papers receiving a total of 3.0k indexed citations (citations by other indexed papers that have themselves been cited), including 184 papers in Electrical and Electronic Engineering, 84 papers in Materials Chemistry and 54 papers in Mechanics of Materials. Recurrent topics in G.Y. Yeom's work include Plasma Diagnostics and Applications (81 papers), Semiconductor materials and devices (77 papers) and Metal and Thin Film Mechanics (51 papers). G.Y. Yeom is often cited by papers focused on Plasma Diagnostics and Applications (81 papers), Semiconductor materials and devices (77 papers) and Metal and Thin Film Mechanics (51 papers). G.Y. Yeom collaborates with scholars based in South Korea, United States and United Kingdom. G.Y. Yeom's co-authors include Youngje Sung, Hyoyoung Lee, Yonghyuk Lee, Jong Tae Lim, J. W. Bae, Jong Woon Bae, John A. Thornton, Mark J. Kushner, Chaiho Jeong and Myung S. Jhon and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

G.Y. Yeom

217 papers receiving 2.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G.Y. Yeom South Korea 29 2.2k 1.4k 549 519 500 223 3.0k
Geun Young Yeom South Korea 27 2.1k 1.0× 1.6k 1.1× 564 1.0× 116 0.2× 583 1.2× 235 3.0k
Scott G. Walton United States 30 1.8k 0.8× 1.4k 1.0× 733 1.3× 97 0.2× 451 0.9× 131 2.9k
Harm C. M. Knoops Netherlands 33 2.9k 1.3× 2.1k 1.5× 324 0.6× 141 0.3× 231 0.5× 78 3.3k
P. Hinze Germany 32 2.3k 1.1× 1.5k 1.1× 229 0.4× 641 1.2× 930 1.9× 91 3.7k
D. V. Tsu United States 22 2.0k 0.9× 1.5k 1.1× 217 0.4× 89 0.2× 263 0.5× 63 2.2k
Masayoshi Umeno Japan 35 2.5k 1.1× 2.6k 1.8× 648 1.2× 888 1.7× 1.1k 2.2× 303 4.7k
Patrice Gergaud France 23 1.0k 0.5× 819 0.6× 348 0.6× 135 0.3× 401 0.8× 194 1.9k
Katsuyoshi Endo Japan 25 787 0.4× 669 0.5× 224 0.4× 145 0.3× 822 1.6× 124 1.9k
Hideki Matsumura Japan 33 3.7k 1.6× 2.7k 1.9× 209 0.4× 94 0.2× 469 0.9× 259 4.3k
Kazuaki Kurihara Japan 22 1.1k 0.5× 1.1k 0.8× 388 0.7× 82 0.2× 390 0.8× 135 1.8k

Countries citing papers authored by G.Y. Yeom

Since Specialization
Citations

This map shows the geographic impact of G.Y. Yeom's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G.Y. Yeom with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G.Y. Yeom more than expected).

Fields of papers citing papers by G.Y. Yeom

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G.Y. Yeom. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G.Y. Yeom. The network helps show where G.Y. Yeom may publish in the future.

Co-authorship network of co-authors of G.Y. Yeom

This figure shows the co-authorship network connecting the top 25 collaborators of G.Y. Yeom. A scholar is included among the top collaborators of G.Y. Yeom based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G.Y. Yeom. G.Y. Yeom is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kim, Chan Ho, Ja Yeon Kim, Jong S. Park, et al.. (2025). Effect of atomic layer etching on the surface damage removal of GaN-based light emitting diodes. Applied Surface Science. 714. 164429–164429. 1 indexed citations
2.
Lee, Youngseok, et al.. (2025). Plasma Dielectric Etching with C4H2F6 Isomers of Low Global-Warming Potential. Journal of Manufacturing and Materials Processing. 9(2). 42–42.
3.
Kim, Dong Woo, et al.. (2025). Effect of showerhead electrode materials on high aspect ratio etching of SiO2. Journal of Industrial and Engineering Chemistry. 153. 729–741.
4.
Kim, Dong Woo, et al.. (2024). Fabrication of TiN metal hard masks via very-high-frequency-direct-current superimposed sputtering. Materials Science in Semiconductor Processing. 184. 108852–108852. 1 indexed citations
5.
Kim, Heeju, et al.. (2024). Clean SiO2 atomic layer etching based on physisorption of high boiling point perfluorocarbon. Nanoscale. 16(30). 14433–14440. 1 indexed citations
6.
Yeom, G.Y., et al.. (2024). Plasma atomic layer etching of SiO2 with a low global warming potential fluorocarbon precursor (C6F6). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 42(3). 1 indexed citations
7.
Moon, Jaehyun, Hyunjung Lee, Dongwook Kim, et al.. (2024). Specific molecular design of tetradentate Platinum(II) complexes for enhancing the electroluminescent performances of blue-phosphorescent organic light-emitting diodes. Chemical Engineering Journal. 505. 159169–159169. 5 indexed citations
8.
Lee, Heesoo, Ki‐Hyun Kim, Kwangsik Jeong, et al.. (2023). Three-Dimensional Surface Treatment of MoS2 Using BCl3 Plasma-Derived Radicals. ACS Applied Materials & Interfaces. 15(39). 46513–46519. 3 indexed citations
9.
Kim, Dongwoo, et al.. (2020). Etch characteristics of Si and TiO 2 nanostructures using pulse biased inductively coupled plasmas. Nanotechnology. 31(26). 265302–265302. 6 indexed citations
10.
Kim, Dong‐Hyun, et al.. (2013). Nanometer-Scale Fabrication of Hydrogen Silsesquioxane (HSQ) Films with Post Exposure Baking. Journal of Nanoscience and Nanotechnology. 13(3). 1918–1922. 2 indexed citations
11.
Lim, Jae‐Young, et al.. (2013). Study of the Electronic Structure of the Interfaces Between 2-TNATA and MoO<SUB><I>x</I></SUB>. Journal of Nanoscience and Nanotechnology. 13(12). 8025–8031. 1 indexed citations
12.
Jhon, Myung S., et al.. (2011). Etch Damage of Ge. Japanese Journal of Applied Physics. 50(8). 2 indexed citations
13.
Yeom, G.Y., et al.. (2006). Investigation of the magnetic properties of an RF-driven inductively coupled argon plasma. Journal of the Korean Physical Society. 49(4). 1460–1464. 1 indexed citations
14.
Yeom, G.Y., et al.. (2005). Structural and Electrical Analysis of Silicon Thin Films Deposited by Transformer-Coupled-Plasma Chemical-Vapor Deposition. Journal of the Korean Physical Society. 47(2). 277–282. 4 indexed citations
15.
Yeom, G.Y., et al.. (2005). Atomic layer etching of Cl-adsorbed silicon by using a low-angle forward reflected Ar neutral beam. Journal of the Korean Physical Society. 47(2). 469–473. 6 indexed citations
16.
Lee, Yonghyuk, et al.. (2005). Characteristics of Carbon Nanotubes Deposited by Using Low-Temperature Atmospheric-Pressure Plasma-Enhanced Chemical Vapor Deposition. 2 indexed citations
17.
Yeom, G.Y., et al.. (2005). Growth and Field-Emission Properties of Multiwalled Carbon Nanotubes Synthesized by a Pin-to-Plate-Type Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition. 1 indexed citations
18.
Yeom, G.Y., et al.. (2004). Removal of Aspect-Ratio-Dependent Etching by Low-Angle Forward Reflected Neutral-Beam Etching. Open Access System for Information Sharing (Pohang University of Science and Technology). 1 indexed citations
19.
Yeom, G.Y., et al.. (2002). Damage during SiO_2 Etching by Low-Angle Forward Reflected Neutral Beam : Instrumentation, Measurement, and Fabrication Technology. Japanese Journal of Applied Physics. 41(12). 1 indexed citations
20.
Yeom, G.Y., et al.. (1999). A Study of Dry Etch Mechanism of the GaN using Plasma Mass Spectrometry. Journal of the Korean institute of surface engineering. 32(3). 416–422. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026