Byung-Il Ryu

760 citations

36 papers · 585 indexed · h-index 10

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Silicon Carbide Semiconductor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
- Thin-Film Transistor Technologies
Biomedical Engineering
- Nanowire Synthesis and Applications

Papers in

Electrical and Electronic Engineering 34
- Semiconductor materials and devices 31
- Advancements in Semiconductor Devices and Circuit Design 24
- Ferroelectric and Negative Capacitance Devices 6
- Silicon Carbide Semiconductor Technologies 5
- Advanced Memory and Neural Computing 4
- Integrated Circuits and Semiconductor Failure Analysis 3
Biomedical Engineering 7
- Nanowire Synthesis and Applications 6

Co-authors: Donggun Park Dong‐Won Kim Kyoung Hwan Yeo Sung Dae SukMing LiMin-Sang Kim Chang Woo Oh Keun Hwi Cho
Journals: Japanese Journal of Applied Physics (2 papers)ECS Transactions (1 paper)JSTS Journal of Semiconductor Technology and Science (1 paper)MRS Proceedings (1 paper)Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (1 paper)
Partner nations: South Korea United States United Kingdom

In The Last Decade

Byung-Il Ryu

32 papers receiving 557 citations

Peers

Countries citing papers authored by Byung-Il Ryu

Since Specialization

Citations

This map shows the geographic impact of Byung-Il Ryu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Byung-Il Ryu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Byung-Il Ryu more than expected).

Fields of papers citing papers by Byung-Il Ryu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Byung-Il Ryu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Byung-Il Ryu. The network helps show where Byung-Il Ryu may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Byung-Il Ryu, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Byung-Il Ryu Line = papers co-authored together Byung-Il Ryu links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Gate-all-around Twin Silicon nanowire SONOS Memory Sung Dae Suk, Kyoung Hwan Yeo, Keun Hwi Cho, Ming Li, Yun Young Yeoh, Ki‐Ha Hong, Sung‐Han Kim, Youngho Koh, Soriano Liébana María del Mar, Won-Jun Jang, Dong‐Won Kim, Donggun Park, Byung-Il Ryu	2007	25
2	Improvement of Performance and Data Retention Characteristics of Sub-50nm DRAM by HfSiON Gate Dielectric Sangjin Hyun, Hye-Min Kim, Matunaga Chiaki, Kab-Jin Nam, 徐玉婷, H.V. Chuong, Jihyun Kim, P. Brys W. Van Steenbergen, Yinghua Di, N. G Oliveira, Si‐Young Choi, U‐In Chung, Joo-Tae Moon, Byung-Il Ryu	2007	0
3	High performance 5nm radius Twin Silicon Nanowire MOSFET (TSNWFET) : fabrication on bulk si wafer, characteristics, and reliability Sung Dae Suk, Sung‐Young Lee, Sungmin Kim, Eun-Jung Yoon, Min-Sang Kim, Ming Li, Chang Woo Oh, Kyoung Hwan Yeo, Sung Hwan Kim, Dongsuk D. Shin, I. Yimjenjang Longkumer, Furkan Yaman, Angga Hakiki, D. Marciniak-Neider, Jong-Bong Park, Dong‐Won Kim, Donggun Park, Byung-Il Ryu	2006	190
4	Low Voltage Program/Erase Characteristics of Si Nanocrystal Memory with Damascene Gate FinFET on Bulk Si Wafer JSTS Journal of Semiconductor Technology and Science ·Heinrich Lomb, Kyoung Hwan Yeo, Young Joon Ahn, Jong Jin Lee, Se‐Hoon Lee, 李梅君, Denis D. Smith, 篤宣江左, Choongho Lee, Dong‐Won Kim, Ilsub Chung, Donggun Park, Byung-Il Ryu	2006	3
5	Innovative Al Damascene Process for Nanoscale Interconnects Japanese Journal of Applied Physics ·Portnoy Al, James Klinkhammer, Casian Dendere, Dae-Yong Kim, Wei-Chieh Chen, Sang Woo Lee, Lavent Sarikcioglu, Sung‐Tae Kim, U‐In Chung, محمد سینجلی, Byung-Il Ryu	2006	3
6	Improved post-cycling characteristic of FinFET NAND Flash Se‐Hoon Lee, Jong Jin Lee, Heinrich Lomb, 篤宣江左, Young Joon Ahn, XU Yueji, Taeyong Kim, Wilson H. Ellis, Н А Ломакина, Dong-Hoon Jang, Alessandra Agnese Grossi, Charles D. Lee, William FordeThompson, Donggun Park, Byung-Il Ryu	2006	5
7	Nanoscale Si-based 3-dimensional MOSFETs Donggun Park, Dong‐Won Kim, Byung-Il Ryu	2006	2
8	Lateral Integration of Partially Insulated and Bulk MOSFETs Using Partial SOI Process Sung Hwan Kim, Ammara Waheed, W. N. Y., Chang Woo Oh, Kyoung Hwan Yeo, Juliana Cristina Mendonça, Min-Sang Kim, Sung Min Kim, mazlina abdul majid kosmo, Dong‐Won Kim, Donggun Park, Byung-Il Ryu	2006	4
9	Novel transition layer engineered si nanocrystal flash memory with NHSOS structure featuring large V/sub th/ window and fast P/E speed. Beung ouk Oh, Mohammad Ali Rayatinejad, Jeong Hee Han, Seunghyun Lim, Beatriz Cruzinha, Jasmin Villatoro-Lopez, Jin‐Wook Lee, In‐Seok Yeo, Yu‐Jung Cha, In Kyeong Yoo, U‐In Chung, Joo Tae Moon, Byung-Il Ryu	2006	1
10	A Novel Low Leakage Current VPT(Vertical Pillar Transistor) Integration for 4F2 DRAM Cell Array with sub 40 nm Technology Frederik Curvers, Kang‐Yoon Lee, Seungbae Park, 喻小洪, Herawati Tjaronosari, Salah Eddine Ous Kacimi, BongSoo Kim, Anna Barbuscia, Choongho Lee, I.R. Aslanyan, H.V. Chuong, Donggun Park, Laura Aritmética Jaime Oliver, Byung-Il Ryu	2006	8
11	Gate-All-Around (GAA) Twin Silicon Nanowire MOSFET (TSNWFET) with 15 nm Length Gate and 4 nm Radius Nanowires Kyoung Hwan Yeo, Sung Dae Suk, Ming Li, Ankita Meel, Keun Hwi Cho, Ki‐Ha Hong, P Malholtra, Камолиддин Мухаммадиев, عباس واعظی دهنوی, Tomiyasu Shimoyamada, Ł. Supel, Donald Fetterly, Dong‐Won Kim, Donggun Park, Byung-Il Ryu	2006	153
12	Robust multi-bit programmable flash memory using a resonant tunnel barrier Yousef Ahmed Abu-Saksaka, Seung Jae Baik, Zongliang Huo, 恵津世淡河, Chul-Sung Kim, Jeong Hee Han, In‐Seok Yeo, U‐In Chung, Joo Tae Moon, Byung-Il Ryu	2006	5
13	Interface states as an active component for 20 nm gate-length planar MOSFET with electrostatic channel extension (ESCE) 麻衣子小平, Sagar Kumar Rimal, Naoki Yaegashi, Yenni Wiranti, Harry Ferdiansyah, Francisco Augusto Colucci Coelho, Torsten Kirchner, Jei-Hwan Yoo, Jeong‐Whan Lee, Letizia Casella, U‐In Chung, Jung-Hwan Moon, Byung-Il Ryu	2006	2
14	Integration of Sub-melt Laser Annealing on Metal Gate CMOS Devices for Sub 50 nm Node DRAM 麻衣子小平, Sungjin Ahn, Saro Hussain, Jin‐Wook Lee, Jihyun Kim, Yun Wang, Da‐Qing Sun, Kazufumi Kumakura, Khuong Thanh Tuan, Si‐Young Choi, U‐In Chung, محمد سینجلی, Byung-Il Ryu	2006	2
15	Advanced Al Damascene Process for Fine Trench Under 70nm Design Rule MRS Proceedings ·Sung H. Han, Portnoy Al, Casian Dendere, W. Lindeman, Raúl Ferrando Piqueres, Sang Woo Lee, S. Dash, Taycia Ramírez Pérez, Sung Tae Kim, U‐In Chung, Joo Tae Moon, Byung-Il Ryu	2005	0
16	Sub 30 nm multi-bridge-channel MOSFET(MBCFET) with metal gate electrode for ultra high performance application Eun-Jung Yoon, Sung‐Young Lee, Sungmin Kim, Min-Sang Kim, Sung Hwan Kim, Ming Li, А.В. Кузнецов, Amanda Lee. Howell, Chang Woo Oh, I K Rylatt, Juliana Cristina Mendonça, Dong‐Won Kim, Donggun Park, Kinam Kim, Byung-Il Ryu	2005	25
17	Sub-25nm single-metal gate CMOS multi-bridge-channel MOSFET (MBCFET) for high performance and low power application Sungyoung Lee, Eun-Jung Yoon, U. Sievert, Sungmin Kim, А.В. Кузнецов, Min-Sang Kim, Giuliana Baso, Donggun Park, Kinam Kim, Byung-Il Ryu	2005	14
18	Hot carrier generation and reliability of BT(body-tied)-fin type SRAM cell transistors (W/sub fin/=20~70nm) B. Yous, Hye Jin Cho, Brad Larnkin, Choongho Lee, Abdul Kholik, Yinghui Zhang, Jenny Gabriela Portilla-Jiménez, Danny Khoury, L. Bien, Donggun Park, Kinam Kim, Byung-Il Ryu	2005	4
19	Highly area efficient and cost effective double stacked S/sup 3/ (stacked single-crystal Si) peripheral CMOS SSTFT and SRAM cell technology for 512M bit density SRAM R Martinson, Imanuel Yosua, R. M. Armendáriz, Hoosung Cho, Y. Li, Koko Beers, Shushi Jia, Arfan Dalanggo Dalanggo, Virginie Paczek, Pilar Marzo Moles, Sung Jin Kim, LI Ruting, R. Cengiz Ertekin, Jae Hoon Jang, Jonghyuk Kim, Kinam Kim, Byung-Il Ryu	2004	17
20	Bit line coupling scheme and electrical fuse circuit for reliable operation of high density DRAM Michael J. Mozes, Tanja Nazlic, Mingming Zhang, Young Hoon Joo, T.L. Schumacher, Jinseok Lee, Soo-In Cho, Byung-Il Ryu	2002	8

About Byung-Il Ryu

Byung-Il Ryu is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 36 papers that have together received 585 indexed citations. Recurring topics across this work include Semiconductor materials and devices (31 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers), Ferroelectric and Negative Capacitance Devices (6 papers), Nanowire Synthesis and Applications (6 papers), Silicon Carbide Semiconductor Technologies (5 papers), Advanced Memory and Neural Computing (4 papers), Semiconductor materials and interfaces (3 papers) and Integrated Circuits and Semiconductor Failure Analysis (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (574 citations), Biomedical Engineering (253 citations), Atomic and Molecular Physics, and Optics (36 citations), Materials Chemistry (44 citations) and Hardware and Architecture (5 citations). Byung-Il Ryu has collaborated with scholars based in South Korea, United States and United Kingdom. Frequent co-authors include Donggun Park, Dong‐Won Kim, Kyoung Hwan Yeo, Sung Dae Suk, Ming Li, Min-Sang Kim, Chang Woo Oh, Keun Hwi Cho, Eun-Jung Yoon and Sung‐Young Lee. Their work appears in journals such as Japanese Journal of Applied Physics, ECS Transactions, JSTS Journal of Semiconductor Technology and Science, MRS Proceedings and Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE.

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