Junji Cheng

456 total citations
62 papers, 329 citations indexed

About

Junji Cheng is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Junji Cheng has authored 62 papers receiving a total of 329 indexed citations (citations by other indexed papers that have themselves been cited), including 59 papers in Electrical and Electronic Engineering, 9 papers in Condensed Matter Physics and 7 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Junji Cheng's work include Silicon Carbide Semiconductor Technologies (51 papers), Semiconductor materials and devices (36 papers) and Advancements in Semiconductor Devices and Circuit Design (32 papers). Junji Cheng is often cited by papers focused on Silicon Carbide Semiconductor Technologies (51 papers), Semiconductor materials and devices (36 papers) and Advancements in Semiconductor Devices and Circuit Design (32 papers). Junji Cheng collaborates with scholars based in China, Canada and United States. Junji Cheng's co-authors include Xingbi Chen, Bo Yi, Haimeng Huang, Weizhen Chen, Ping Li, Wai Tung Ng, Yong Xiang, Kejun Wu, Kaikai Xu and Yanxu Chen and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Power Electronics.

In The Last Decade

Junji Cheng

56 papers receiving 314 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Junji Cheng China 12 304 31 28 26 22 62 329
Bo Yi China 11 320 1.1× 26 0.8× 21 0.8× 27 1.0× 17 0.8× 74 337
Meng-Tian Bao China 11 320 1.1× 25 0.8× 19 0.7× 38 1.5× 18 0.8× 33 343
Siddharth Potbhare United States 10 602 2.0× 39 1.3× 63 2.3× 16 0.6× 21 1.0× 36 616
Anup Bhalla United States 11 410 1.3× 18 0.6× 38 1.4× 52 2.0× 15 0.7× 48 448
Mateusz Słowikowski Poland 10 192 0.6× 12 0.4× 68 2.4× 15 0.6× 16 0.7× 40 252
Arash Salemi Sweden 13 428 1.4× 59 1.9× 50 1.8× 31 1.2× 28 1.3× 43 435
Filip Schleicher Belgium 7 124 0.4× 35 1.1× 44 1.6× 20 0.8× 54 2.5× 23 170
Hossein Elahipanah Sweden 12 367 1.2× 44 1.4× 49 1.8× 43 1.7× 45 2.0× 39 382
Liu Xinyu China 8 146 0.5× 36 1.2× 54 1.9× 88 3.4× 20 0.9× 50 183
Dimitris P. Ioannou United States 11 308 1.0× 11 0.4× 29 1.0× 6 0.2× 34 1.5× 33 312

Countries citing papers authored by Junji Cheng

Since Specialization
Citations

This map shows the geographic impact of Junji Cheng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Junji Cheng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Junji Cheng more than expected).

Fields of papers citing papers by Junji Cheng

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Junji Cheng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Junji Cheng. The network helps show where Junji Cheng may publish in the future.

Co-authorship network of co-authors of Junji Cheng

This figure shows the co-authorship network connecting the top 25 collaborators of Junji Cheng. A scholar is included among the top collaborators of Junji Cheng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Junji Cheng. Junji Cheng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Yi, Bo, Huan Li, Yi Xu, et al.. (2024). Fabricating and TCAD Optimization for a SiC Trench MOSFET With Tilted P-Shielding Implantation and Integrated TJBS. IEEE Transactions on Electron Devices. 71(3). 1618–1625. 3 indexed citations
3.
Huang, Haimeng, et al.. (2024). Optimization of specific on-resistance of a two-zone variational vertical doping superjunction with insulating layers. Semiconductor Science and Technology. 40(2). 25003–25003.
4.
Yi, Bo, et al.. (2024). Simulation of a 3.5 kV 4H-SiC/Ga2O3 E-mode MISFET With Integrated Reverse-Conducting Heterojunction and Hetero-Channel Diode. IEEE Electron Device Letters. 45(12). 2303–2306. 2 indexed citations
5.
Cheng, Junji, et al.. (2024). Study on a p-GaN HEMT with composite passivation and composite barrier layers. Semiconductor Science and Technology. 39(8). 85004–85004. 3 indexed citations
6.
Yi, Bo, et al.. (2023). Investigation of a Novel Enhancement-Mode Al0.25Ga0.75N/AlN/Al X Ga(1-X)N/GaN MIS-HEMT for High Vth and Low R on,sp. IEEE Transactions on Electron Devices. 70(7). 3704–3710. 1 indexed citations
7.
Yi, Bo, et al.. (2023). Analytical model and simulation study of a novel enhancement-mode Ga2O3 MISFET realized by p-GaN gate. Semiconductor Science and Technology. 38(9). 95003–95003. 1 indexed citations
8.
Cheng, Junji, et al.. (2022). A High-k LDMOS Improved by Floating Field Plates for Enhanced Cost Performance and Robustness. IEEE Transactions on Electron Devices. 69(12). 7199–7202. 3 indexed citations
9.
Huang, Haimeng, Haoyue Zhang, Junji Cheng, et al.. (2022). Optimization and Comparison of Specific ON-Resistance for Superjunction MOSFETs Considering Three-Dimensional and Insulator-Pillar Concepts. IEEE Transactions on Electron Devices. 69(3). 1162–1168. 6 indexed citations
10.
Yi, Bo, et al.. (2021). Simulation Study of a p-GaN HEMT With an Integrated Schottky Barrier Diode. IEEE Transactions on Electron Devices. 68(12). 6039–6045. 8 indexed citations
11.
Yi, Bo, et al.. (2021). A low loss single-channel SiC trench MOSFET with integrated trench MOS barrier Schottky diode. Semiconductor Science and Technology. 36(7). 75006–75006. 10 indexed citations
12.
Huang, Haimeng, et al.. (2020). Optimization and Comparison of Drift Region Specific ON-Resistance for Vertical Power Hk MOSFETs and SJ MOSFETs With Identical Aspect Ratio. IEEE Transactions on Electron Devices. 67(6). 2463–2470. 10 indexed citations
13.
Huang, Haimeng, et al.. (2020). A unified model for vertical doped and polarized superjunction GaN devices. Applied Physics Letters. 116(10). 8 indexed citations
14.
Cheng, Junji, et al.. (2020). Lateral Power Fin MOSFET With a High-k Passivation for Ultra-Low On-Resistance. IEEE Access. 8. 48991–48999. 2 indexed citations
15.
Yi, Bo, et al.. (2019). A 600-V Super-Junction pLDMOS Utilizing Electron Current to Enhance Current Capability. IEEE Transactions on Electron Devices. 66(5). 2314–2320. 3 indexed citations
16.
Chen, Weizhen, et al.. (2019). The Oppositely Doped Islands IGBT Achieving Ultralow Turn Off Loss. IEEE Transactions on Electron Devices. 66(8). 3690–3693. 15 indexed citations
17.
Cheng, Junji, et al.. (2019). A Trench LDMOS Improved by Quasi Vertical Super Junction and Resistive Field Plate. IEEE Journal of the Electron Devices Society. 7. 682–689. 7 indexed citations
18.
Huang, Haimeng, et al.. (2019). Analytical Models of Breakdown Voltage and Specific On-Resistance for Vertical GaN Unipolar Devices. IEEE Access. 7. 140383–140390. 6 indexed citations
19.
Cheng, Junji, Haimeng Huang, Bo Yi, Weijia Zhang, & Wai Tung Ng. (2019). A TCAD Study on Lateral Power MOSFET With Dual Conduction Paths and High-$k$ Passivation. IEEE Electron Device Letters. 41(2). 260–263. 15 indexed citations
20.
Cheng, Junji, Weizhen Chen, Ping Li, et al.. (2019). Potential of Utilizing High-$k$ Film to Improve the Cost Performance of Trench LDMOS. IEEE Transactions on Electron Devices. 66(7). 3049–3054. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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