Tomislav Brodar

508 citations

15 papers · 251 indexed · h-index 10

Impact in

Nuclear Energy and Engineering
Electrical and Electronic Engineering
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Thin-Film Transistor Technologies
- Radiation Effects in Electronics
- Silicon and Solar Cell Technologies

Papers in

Electrical and Electronic Engineering 15
- Silicon Carbide Semiconductor Technologies 13
- Semiconductor materials and devices 9
- Thin-Film Transistor Technologies 3
- Integrated Circuits and Semiconductor Failure Analysis 2
- Radiation Effects in Electronics 2
- Silicon and Solar Cell Technologies 2
Materials Chemistry 6
- Diamond and Carbon-based Materials Research 2

Co-authors: Ivana Capan Takeshi Ohshima Željko Pastuović Takahiro Makino Vladimir Radulović Luka Snoj J. Coutinho Rainer Siegele
Journals: Journal of Applied Physics (2 papers)Journal of Physics Condensed Matter (1 paper)Materials (1 paper)Physical review. B. (1 paper)Applied Physics Express (1 paper)
Partner nations: Croatia Japan Australia

In The Last Decade

Tomislav Brodar

15 papers receiving 240 citations

Peers

Countries citing papers authored by Tomislav Brodar

Since Specialization

Citations

This map shows the geographic impact of Tomislav Brodar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tomislav Brodar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tomislav Brodar more than expected).

Fields of papers citing papers by Tomislav Brodar

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tomislav Brodar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tomislav Brodar. The network helps show where Tomislav Brodar may publish in the future.

Co-authorship network

The 15 scholars most cited alongside Tomislav Brodar, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Tomislav Brodar Line = papers co-authored together Tomislav Brodar links everyone, so they are left out of the graph.

All Works

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15 of 15 papers shown

#	Work
1	Distinguishing the EH₁ and S₁ defects in n-type 4H-SiC by Laplace DLTS Applied Physics Express ·陈兴东, Tomislav Brodar, Vladimir Radulović, Luka Snoj, Takahiro Makino, Ivana Capan	2022	5
2	Majority and Minority Charge Carrier Traps in n-Type 4H-SiC Studied by Junction Spectroscopy Techniques SHILAP Revista de lepidopterología ·Ivana Capan, Tomislav Brodar	2022	10
3	M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies Journal of Applied Physics ·Ivana Capan, Tomislav Brodar, 버틀러 조오지, Željko Pastuović, Takahiro Makino, Takeshi Ohshima, José D. Gouveia, J. Coutinho	2021	15
4	M center in 4H-SiC is a carbon self-interstitial Physical review. B. ·J. Coutinho, José D. Gouveia, Takahiro Makino, Takeshi Ohshima, Željko Pastuović, César Augusto Alvarez Falcón, Tomislav Brodar, Ivana Capan	2021	13
5	Structural and Electrical Characterization of Pure and Al-Doped ZnO Nanorods Materials ·沢井宏文, Ivana Capan, Tomislav Brodar, Mariko Nimura, Vilko Mandić	2021	6
6	M-Center in Neutron-Irradiated 4H-SiC Crystals ·Ivana Capan, Tomislav Brodar, Takahiro Makino, Vladimir Radulović, Luka Snoj	2021	9
7	Response of 4H-SiC Detectors to Ionizing Particles Crystals ·버틀러 조오지, Ivana Capan, César Augusto Alvarez Falcón, Tomislav Brodar, Takahiro Makino, Takeshi Ohshima, Željko Pastuović, A. Sarbutt	2020	25
8	Silicon carbide diodes for neutron detection Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·J. Coutinho, V. J. B. Torres, Ivana Capan, Tomislav Brodar, 久佳湯沢, 버틀러 조오지, Vladimir Radulović, Klemen Ambrožič, Luka Snoj, Željko Pastuović, A. Sarbutt, Takeshi Ohshima, Lywouty Reymond de Sousa Nascimento, Takahiro Makino	2020	43
9	Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation Crystals ·Tomislav Brodar, César Augusto Alvarez Falcón, Ivana Capan, Takeshi Ohshima, Luka Snoj, Vladimir Radulović, Željko Pastuović	2020	13
10	E-SiCure Collaboration Project: Silicon Carbide Material Studies and Detector Prototype Testing at the JSI TRIGA Reactor SHILAP Revista de lepidopterología ·Vladimir Radulović, Klemen Ambrožič, Luka Snoj, Ivana Capan, Tomislav Brodar, 久佳湯沢, Željko Pastuović, A. Sarbutt, Takeshi Ohshima, Lywouty Reymond de Sousa Nascimento, J. Coutinho	2020	3
11	Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Ivana Capan, Tomislav Brodar, Lywouty Reymond de Sousa Nascimento, Sydney N. Chapman, Takeshi Ohshima, Hara Tomoaki, Yasuto Hijikata, Saumil Sood, Vladimir Radulović	2020	28
12	Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes Crystals ·Ivana Capan, Lywouty Reymond de Sousa Nascimento, Sydney N. Chapman, Tomislav Brodar, Takahiro Makino, Takeshi Ohshima	2019	11
13	Deep Level Defects in 4H-SiC Epitaxial Layers Materials science forum ·Ivana Capan, Tomislav Brodar, Takeshi Ohshima, Shin Sato, Takahiro Makino, Željko Pastuović, Rainer Siegele, Luka Snoj, Vladimir Radulović, J. Coutinho, V. J. B. Torres, А.Б. Антопольский	2018	1
14	Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study Journal of Applied Physics ·Ivana Capan, Tomislav Brodar, Željko Pastuović, Rainer Siegele, Takeshi Ohshima, Shin Sato, Takahiro Makino, Luka Snoj, Vladimir Radulović, J. Coutinho, V. J. B. Torres, А.Б. Антопольский	2018	41
15	Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime Journal of Physics Condensed Matter ·Željko Pastuović, Rainer Siegele, Ivana Capan, Tomislav Brodar, Shin Sato, Takeshi Ohshima	2017	28

About Tomislav Brodar

Tomislav Brodar is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Nuclear and High Energy Physics and Infectious Diseases, having authored 15 papers that have together received 251 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (13 papers), Semiconductor materials and devices (9 papers), Semiconductor materials and interfaces (4 papers), Thin-Film Transistor Technologies (3 papers), Integrated Circuits and Semiconductor Failure Analysis (2 papers), Diamond and Carbon-based Materials Research (2 papers), Radiation Effects in Electronics (2 papers) and Silicon and Solar Cell Technologies (2 papers). The work is most often cited by research in Nuclear Energy and Engineering (2 citations), Electrical and Electronic Engineering (223 citations), Radiation (18 citations), Atomic and Molecular Physics, and Optics (60 citations) and Electronic, Optical and Magnetic Materials (24 citations). Tomislav Brodar has collaborated with scholars based in Croatia, Japan and Australia. Frequent co-authors include Ivana Capan, Takeshi Ohshima, Željko Pastuović, Takahiro Makino, Vladimir Radulović, Luka Snoj, J. Coutinho, Rainer Siegele, Shin Sato and V. J. B. Torres. Their work appears in journals such as Journal of Applied Physics, Journal of Physics Condensed Matter, Materials, Physical review. B. and Applied Physics Express.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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