B. Keppens

556 total citations
24 papers, 429 citations indexed

About

B. Keppens is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Infectious Diseases. According to data from OpenAlex, B. Keppens has authored 24 papers receiving a total of 429 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 1 paper in Biomedical Engineering and 0 papers in Infectious Diseases. Recurrent topics in B. Keppens's work include Electrostatic Discharge in Electronics (22 papers), Integrated Circuits and Semiconductor Failure Analysis (19 papers) and Semiconductor materials and devices (10 papers). B. Keppens is often cited by papers focused on Electrostatic Discharge in Electronics (22 papers), Integrated Circuits and Semiconductor Failure Analysis (19 papers) and Semiconductor materials and devices (10 papers). B. Keppens collaborates with scholars based in Belgium, Germany and United States. B. Keppens's co-authors include K. Verhaege, M. Mergens, J. Armer, P. Jozwiak, C. Russ, Benjamin Van Camp, V. De Heyn, G. Groeseneken, Christian Russ and M. Natarajan and has published in prestigious journals such as Microelectronics Reliability, IEEE Transactions on Device and Materials Reliability and Electrical Overstress/Electrostatic Discharge Symposium.

In The Last Decade

B. Keppens

23 papers receiving 393 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Keppens Belgium 11 429 9 4 1 1 24 429
J. Armer Germany 9 352 0.8× 9 1.0× 12 355
P. Jozwiak Germany 9 355 0.8× 8 0.9× 1 0.3× 1 1.0× 13 356
R.N. Rountree United States 8 310 0.7× 24 2.7× 2 0.5× 2 2.0× 12 313
K. Verhaege Belgium 15 827 1.9× 26 2.9× 7 1.8× 3 3.0× 1 1.0× 39 828
A.Z.H. Wang United States 7 376 0.9× 19 2.1× 5 1.3× 6 6.0× 7 380
Michael Stockinger United States 11 347 0.8× 23 2.6× 11 2.8× 2 2.0× 3 3.0× 32 351
K. Komeyli United States 6 72 0.2× 13 1.4× 5 1.3× 3 3.0× 6 72
X. Montagner France 5 85 0.2× 2 0.2× 5 1.3× 7 86
C. W. Chang Taiwan 5 56 0.1× 6 0.7× 6 1.5× 2 2.0× 6 64
C. Parker United States 4 105 0.2× 11 1.2× 4 4.0× 8 107

Countries citing papers authored by B. Keppens

Since Specialization
Citations

This map shows the geographic impact of B. Keppens's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Keppens with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Keppens more than expected).

Fields of papers citing papers by B. Keppens

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Keppens. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Keppens. The network helps show where B. Keppens may publish in the future.

Co-authorship network of co-authors of B. Keppens

This figure shows the co-authorship network connecting the top 25 collaborators of B. Keppens. A scholar is included among the top collaborators of B. Keppens based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Keppens. B. Keppens is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Camp, Benjamin Van, et al.. (2017). Low capacitive dual bipolar ESD protection. 1–7. 1 indexed citations
3.
Keppens, B., et al.. (2010). On-chip ESD protection with improved high holding current SCR (HHISCR) achieving IEC 8kV contact system level. Electrical Overstress/Electrostatic Discharge Symposium. 1–10. 5 indexed citations
4.
Suzuki, T., et al.. (2008). CDM analysis on 65nm CMOS: Pitfalls when correlating results between IO test chips and product level. Electrical Overstress/Electrostatic Discharge Symposium. 325. 325–331. 4 indexed citations
5.
Camp, Benjamin Van, et al.. (2007). SCR-based ESD protection in nanometer SOI technologies. Microelectronics Reliability. 47(7). 1060–1068. 11 indexed citations
6.
Keppens, B., et al.. (2006). Concept for body coupling in SOI MOS transistors to improve multi-finger triggering. Electrical Overstress/Electrostatic Discharge Symposium. 172–178. 8 indexed citations
7.
Camp, Benjamin Van, et al.. (2005). Current detection trigger scheme for SCR based ESD protection of output drivers in CMOS technologies avoiding competitive triggering. Electrical Overstress/Electrostatic Discharge Symposium. 1–7. 4 indexed citations
8.
Mergens, M., Benjamin Van Camp, B. Keppens, et al.. (2005). ESD protection circuit design for ultra-sensitive IO applications in advanced sub-90nm CMOS technologies. 1194–1197. 14 indexed citations
9.
Mergens, M., C. Russ, K. Verhaege, et al.. (2005). Speed optimized diode-triggered SCR (DTSCR) for RF ESD protection of ultra-sensitive IC nodes in advanced technologies. IEEE Transactions on Device and Materials Reliability. 5(3). 532–542. 82 indexed citations
10.
Keppens, B., et al.. (2004). ESD protection solutions for high voltage technologies. 1–10. 59 indexed citations
11.
Mergens, M., C. Russ, K. Verhaege, et al.. (2004). Diode-triggered SCR (DTSCR) for RF-ESD protection of BiCMOS SiGe HBTs and CMOS ultra-thin gate oxides. 21.3.1–21.3.4. 84 indexed citations
12.
Keppens, B., M. Mergens, J. Armer, et al.. (2003). Active-area-segmentation (AAS) technique for compact, ESD robust, fully silicided NMOS design. Electrical Overstress/Electrostatic Discharge Symposium. 1–9. 17 indexed citations
13.
Mergens, M., K. Verhaege, C. Russ, et al.. (2003). Multi-finger turn-on circuits and design techniques for enhanced ESD performance and width scaling. Microelectronics Reliability. 43(9-11). 1537–1543. 10 indexed citations
14.
Bock, Karlheinz, et al.. (2003). Influence of gate length on ESD-performance for deep sub micron CMOS technology. 95–104. 19 indexed citations
15.
Radhakrishnan, M., V. Vassilev, B. Keppens, et al.. (2002). ESD reliability issues in RF CMOS circuits. 551–556. 7 indexed citations
16.
Keppens, B., et al.. (2002). Significance of the failure criterion on transmission line pulse testing. Microelectronics Reliability. 42(6). 901–907. 5 indexed citations
17.
Keppens, B., et al.. (2001). Contributions to standardization of Transmission Line Pulse testing methodology. Electrical Overstress/Electrostatic Discharge Symposium. 456–462. 14 indexed citations
18.
Houdt, Jan Van, et al.. (2001). A 180nm secondary electron injection flash device. 62–63. 2 indexed citations
19.
Houdt, Jan Van, D. Wellekens, L. Haspeslagh, et al.. (2000). Study of Secondary Electron Injection Phenomena in Deep Sub-micron MOSFETs and Flash Cells. 144–147. 4 indexed citations
20.
Bock, Karlheinz, et al.. (1999). Influence of device geometry on ESD performance for deep submicron CMOS technology. 83–93. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026