Tsutomu Tezuka

1.9k citations

79 papers · 1.5k indexed · h-index 19

Co-authors: Naoharu Sugiyama Shinichi Takagi Yoshihiko Moriyama Shu Nakaharai Koji Usuda Tomohisa Mizuno Yuuichi Kamimuta Toshinori Numata
Topics: Semiconductor materials and devices (66 papers)Advancements in Semiconductor Devices and Circuit Design (53 papers)Nanowire Synthesis and Applications (29 papers)
Cited by: Electrical and Electronic Engineering Biomedical Engineering Structural Biology
Journals: Applied Physics Letters Journal of Applied Physics Journal of The Electrochemical Society
Partner nations: Japan United States South Korea

In The Last Decade

Tsutomu Tezuka

78 papers receiving 1.5k citations

Peers

Countries citing papers authored by Tsutomu Tezuka

Since Specialization

Citations

This map shows the geographic impact of Tsutomu Tezuka's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tsutomu Tezuka with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tsutomu Tezuka more than expected).

Fields of papers citing papers by Tsutomu Tezuka

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tsutomu Tezuka. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tsutomu Tezuka. The network helps show where Tsutomu Tezuka may publish in the future.

Co-authorship network of co-authors of Tsutomu Tezuka

This figure shows the co-authorship network connecting the top 25 collaborators of Tsutomu Tezuka. A scholar is included among the top collaborators of Tsutomu Tezuka based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tsutomu Tezuka. Tsutomu Tezuka is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	High mobility (>30 cm ² V ⁻¹ s ⁻¹ ) and low source/drain parasitic resistance In–Zn–O BEOL transistor with ultralow <10−20 A μ m ⁻¹ off-state leakage current 2019 ·Japanese Journal of Applied Physics ·Nobuyoshi Saito,(unknown),(unknown),Tomomasa Ueda,Tsutomu Tezuka,Keiji Ikeda	12
2	Tungsten/In–Sn–O stacked source/drain electrode structure of In–Ga–Zn–O thin-film transistor for low-contact resistance and suppressing channel shortening effect 2019 ·Japanese Journal of Applied Physics ·(unknown),Nobuyoshi Saito,Tomomasa Ueda,Tsutomu Tezuka,(unknown),Keiji Ikeda	8
3	High-mobility and H<inf>2</inf>-anneal tolerant InGaSiO/InGaZnO/InGaSiO double hetero channel thin film transistor for Si-LSI compatible process 2017 ·Nobuyoshi Saito,(unknown),Tomomasa Ueda,Tsutomu Tezuka,Keiji Ikeda	0
4	Superior cut-off characteristics of L g =40nm W fin =7nm poly Ge junctionless Tri-gate FET for stacked 3D circuits integration 2013 ·Symposium on VLSI Technology ·Yoshiki Kamata,Yuuichi Kamimuta,Keiji Ikeda,(unknown),Mizuki Ono,(unknown),Yoshihiko Moriyama,Koji Usuda,M. Koike,Toshifumi Irisawa,(unknown),Tsutomu Tezuka	10
5	(Invited) GOI Substrates: Fabrication and Characterization 2013 ·ECS Transactions ·Akira Sakai,(unknown),Jun Kikkawa,Shotaro Takeuchi,Yoshiaki Nakamura,Yoshihiko Moriyama,Tsutomu Tezuka,Koji Izunome	1
6	Formation and characterization of locally strained Ge1−Sn /Ge microstructures 2013 ·Thin Solid Films ·(unknown),Yoshihiko Moriyama,Masashi Kurosawa,Noriyuki Taoka,Osamu Nakatsuka,Yasuhiko Imai,Shigeru Kimura,Tsutomu Tezuka,Shigeaki Zaima	4
7	GOI substrates -Fabrication and Characterization- 2012 ·ECS Meeting Abstracts ·Akira Sakai,(unknown),Jun Kikkawa,Yoshiaki Nakamura,Yoshihiko Moriyama,Tsutomu Tezuka,Shotaro Takeuchi,Koji Izunome	3
8	High-mobility and low-parasitic resistance characteristics in strained Ge nanowire pMOSFETs with metal source/drain structure formed by doping-free processes 2012 ·Keiji Ikeda,Mizuki Ono,Daisuke Kosemura,Koji Usuda,(unknown),Yuuichi Kamimuta,Toshifumi Irisawa,Yoshihiko Moriyama,Atsushi Ogura,Tsutomu Tezuka	12
9	Modulation of NiGe/Ge Contact Resistance by S and P Co-introduction 2011 ·Applied Physics Express ·M. Koike,Yuuichi Kamimuta,Tsutomu Tezuka	14
10	Introduction of local tensile strain on Ge substrates by SiGe stressors selectively grown on wet chemically recessed regions for strained Ge-nMOSFETs 2011 ·Solid-State Electronics ·Yoshihiko Moriyama,Yuuichi Kamimuta,Keiji Ikeda,Tsutomu Tezuka	6
11	Generation of uniaxial tensile strain of over 1% on a Ge substrate for short-channel strained Ge n-type Metal–Insulator–Semiconductor Field-Effect Transistors with SiGe stressors 2011 ·Thin Solid Films ·Yoshihiko Moriyama,Yuuichi Kamimuta,Keiji Ikeda,Tsutomu Tezuka	7
12	High-k/Ge p- & n-MISFETs with strontium germanide interlayer for EOT scalable CMIS application 2010 ·Yoshiki Kamata,Keiji Ikeda,Yuuichi Kamimuta,Tsutomu Tezuka	20
13	Electron Mobility and Short-Channel Device Characteristics of SOI FinFETs With Uniaxially Strained (110) Channels 2009 ·IEEE Transactions on Electron Devices ·Toshifumi Irisawa,(unknown),(unknown),Hiroshi Itokawa,Ichiro Mizushima,Koji Usuda,Tsutomu Tezuka,Naoharu Sugiyama,Shinichi Takagi	18
14	Structural analyses of strained SiGe wires formed by hydrogen thermal etching and Ge-condensation processes 2009 ·Applied Physics Letters ·Tsutomu Tezuka,Eiji Toyoda,Toshifumi Irisawa,Norio Hirashita,Yoshihiko Moriyama,Naoharu Sugiyama,Koji Usuda,Shinichi Takagi	10
15	Planar defect formation mechanism in Ge-rich SiGe-on-insulator substrates during Ge condensation process 2008 ·Thin Solid Films ·Norio Hirashita,Shu Nakaharai,Yoshihiko Moriyama,Koji Usuda,Tsutomu Tezuka,Naoharu Sugiyama,Shinichi Takagi	11
16	Physical Understanding of Strain-Induced Modulation of Gate Oxide Reliability in MOSFETs 2008 ·IEEE Transactions on Electron Devices ·Toshifumi Irisawa,Toshinori Numata,Eiji Toyoda,Norio Hirashita,Tsutomu Tezuka,Naoharu Sugiyama,Shinichi Takagi	24
17	Carrier-transport-enhanced CMOS using new channel materials and structures 2007 ·Shinichi Takagi,Toshifumi Irisawa,Tsutomu Tezuka,Shu Nakaharai,Koji Usuda,Norio Hirashita,Mitsuru Takenaka,Naoharu Sugiyama	3
18	New approach to form EOT-scalable gate stack with strontium germanide interlayer for high-k/Ge MISFETs 2006 ·Symposium on VLSI Technology ·Yoshiki Kamata,Akira Takashima,Yuuichi Kamimuta,Tsutomu Tezuka	2
19	Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique 2003 ·Applied Physics Letters ·Shu Nakaharai,Tsutomu Tezuka,Naoharu Sugiyama,Yoshihiko Moriyama,Shinichi Takagi	207
20	Strained-Si-on-Insulator (Strained-SOI) MOSFETs-Concept, Structures and Device Characteristics 2001 ·IEICE Transactions on Electronics ·Shinichi Takagi,Tomohisa Mizuno,Naoharu Sugiyama,Tsutomu Tezuka,A. Kurobe	13

About Tsutomu Tezuka

Tsutomu Tezuka is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics, having authored 79 papers that have together received 1.5k indexed citations. Recurring topics across this work include Semiconductor materials and devices (66 papers), Advancements in Semiconductor Devices and Circuit Design (53 papers) and Nanowire Synthesis and Applications (29 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.4k citations), Biomedical Engineering (509 citations) and Structural Biology (16 citations). Tsutomu Tezuka has collaborated with scholars based in Japan, United States and South Korea. Frequent co-authors include Naoharu Sugiyama, Shinichi Takagi, Yoshihiko Moriyama, Shu Nakaharai, Koji Usuda, Tomohisa Mizuno, Yuuichi Kamimuta, Toshinori Numata, Keiji Ikeda and Norio Hirashita. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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