Weijie Du

836 total citations
38 papers, 739 citations indexed

About

Weijie Du is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Weijie Du has authored 38 papers receiving a total of 739 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 30 papers in Atomic and Molecular Physics, and Optics and 6 papers in Materials Chemistry. Recurrent topics in Weijie Du's work include Semiconductor materials and interfaces (29 papers), Silicon and Solar Cell Technologies (16 papers) and Semiconductor materials and devices (14 papers). Weijie Du is often cited by papers focused on Semiconductor materials and interfaces (29 papers), Silicon and Solar Cell Technologies (16 papers) and Semiconductor materials and devices (14 papers). Weijie Du collaborates with scholars based in Japan, China and United States. Weijie Du's co-authors include Takashi Suemasu, Kaoru Toko, Noritaka Usami, Masakazu Baba, Ryota Takabe, Kosuke O. Hara, M. Ajmal Khan, Kotaro Nakamura, Hiroki Takeuchi and Masako Baba and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Alloys and Compounds.

In The Last Decade

Weijie Du

34 papers receiving 736 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Weijie Du Japan 16 633 621 294 90 28 38 739
S. Brehme Germany 13 514 0.8× 212 0.3× 376 1.3× 61 0.7× 41 1.5× 36 589
М. І. Ілащук Ukraine 14 414 0.7× 181 0.3× 279 0.9× 43 0.5× 37 1.3× 50 489
Aneesh Nainani United States 20 1.1k 1.8× 532 0.9× 271 0.9× 288 3.2× 13 0.5× 56 1.2k
C. Demeurisse Belgium 13 472 0.7× 346 0.6× 139 0.5× 72 0.8× 7 0.3× 37 527
Caspar Leendertz Germany 15 883 1.4× 379 0.6× 471 1.6× 122 1.4× 32 1.1× 36 971
V. V. Kirienko Russia 14 337 0.5× 291 0.5× 321 1.1× 159 1.8× 12 0.4× 62 543
Y. Y. Proskuryakov United Kingdom 12 541 0.9× 352 0.6× 488 1.7× 220 2.4× 15 0.5× 17 708
E. García-Hemme Spain 14 695 1.1× 250 0.4× 482 1.6× 109 1.2× 19 0.7× 49 751
М. В. Катков South Africa 10 171 0.3× 228 0.4× 173 0.6× 127 1.4× 12 0.4× 19 390
Baoxue Bo China 10 361 0.6× 215 0.3× 156 0.5× 47 0.5× 14 0.5× 80 422

Countries citing papers authored by Weijie Du

Since Specialization
Citations

This map shows the geographic impact of Weijie Du's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Weijie Du with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Weijie Du more than expected).

Fields of papers citing papers by Weijie Du

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Weijie Du. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Weijie Du. The network helps show where Weijie Du may publish in the future.

Co-authorship network of co-authors of Weijie Du

This figure shows the co-authorship network connecting the top 25 collaborators of Weijie Du. A scholar is included among the top collaborators of Weijie Du based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Weijie Du. Weijie Du is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chang, Quanhong, Meng Yu, Fangzhou Xing, et al.. (2025). Endogenic ion–electron coupling effect in rGO–Fe2O3 heterostructure for optoelectronic neuromorphic memcapacitor. Applied Physics Letters. 127(7).
2.
3.
Chang, Quanhong, et al.. (2024). MXene-TiO2 heterostructured iontronic neural devices based on ion-dynamic capacitance enabling optoelectronic modulation. Applied Physics Reviews. 11(4). 4 indexed citations
4.
5.
Qu, Wei, Liping Zhang, Min Sun, et al.. (2020). Self-powered ultraviolet–visible–near infrared perovskite/silicon hybrid photodetectors based on a novel Si/SnO2/MAPbI3/MoO3 heterostructure. Applied Physics Express. 13(12). 121001–121001. 23 indexed citations
6.
Ma, Guoliang, Rui Du, Yiheng Zhang, et al.. (2019). Improved power conversion efficiency of silicon nanowire solar cells based on transition metal oxides. Solar Energy Materials and Solar Cells. 193. 163–168. 35 indexed citations
7.
Du, Rui, et al.. (2019). Formation of poly-crystalline BaSi2 thin films by pulsed laser deposition for solar cell applications. Materials Letters. 260. 126936–126936. 9 indexed citations
8.
Li, Yanan, Jianing Cheng, Wei Qu, et al.. (2019). Fabrication of Cu(In,Ga)S x Se 2− x films by one-step sputtering with elevated substrate temperature and their characterization. Japanese Journal of Applied Physics. 59(2). 25501–25501. 1 indexed citations
9.
Baba, Masakazu, Kentaro Watanabe, Takashi Kimura, et al.. (2015). Cross-sectional potential profile across a BaSi2pn junction by Kelvin probe force microscopy. Japanese Journal of Applied Physics. 54(3). 30306–30306. 4 indexed citations
10.
Takeuchi, Hiroki, Weijie Du, Masakazu Baba, et al.. (2015). Characterization of defect levels in undoped n-BaSi2epitaxial films on Si(111) by deep-level transient spectroscopy. Japanese Journal of Applied Physics. 54(7S2). 07JE01–07JE01. 12 indexed citations
11.
Baba, Masakazu, Kentaro Watanabe, Kosuke O. Hara, et al.. (2015). Cross-sectional electric field distributions in BaSi2 homo and BaSi2/Si hetero pn junctions. 1–3.
12.
Koike, Shintaro, Masakazu Baba, Ryota Takabe, et al.. (2014). Photoresponse properties of undoped BaSi2epitaxial layers on n+-BaSi2/p+-Si(001) by molecular beam epitaxy. Japanese Journal of Applied Physics. 53(5). 58007–58007. 14 indexed citations
13.
Baba, Masakazu, Sadahiro Tsurekawa, Kentaro Watanabe, et al.. (2013). Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy. Applied Physics Letters. 103(14). 26 indexed citations
14.
Khan, M. Ajmal, Kosuke O. Hara, Kotaro Nakamura, et al.. (2013). Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells. Journal of Crystal Growth. 378. 201–204. 16 indexed citations
15.
Baba, Masako, Kotaro Nakamura, Weijie Du, et al.. (2013). Fabrication and characterizations of phosphorus‐doped n‐type BaSi2 epitaxial films grown by molecular beam epitaxy. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 10(12). 1753–1755. 15 indexed citations
16.
Nakamura, Kotaro, Masako Baba, M. Ajmal Khan, et al.. (2013). Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111). Journal of Applied Physics. 113(5). 21 indexed citations
17.
Nakamura, Kotaro, Katsuaki Toh, Masako Baba, et al.. (2013). Lattice and grain-boundary diffusions of impurity atoms in BaSi2 epitaxial layers grown by molecular beam epitaxy. Journal of Crystal Growth. 378. 189–192. 8 indexed citations
18.
Du, Weijie, Mitsushi Suzuno, M. Ajmal Khan, et al.. (2012). Improved photoresponsivity of semiconducting BaSi2 epitaxial films grown on a tunnel junction for thin-film solar cells. Applied Physics Letters. 100(15). 152114–152114. 46 indexed citations
19.
Du, Weijie, Takanobu Saito, M. Ajmal Khan, et al.. (2012). Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n+-BaSi2/p+-Si Tunnel Junction to Undoped BaSi2Overlayers. Japanese Journal of Applied Physics. 51(4S). 04DP01–04DP01. 1 indexed citations
20.
Baba, Masakazu, Kotaro Nakamura, Weijie Du, et al.. (2012). Molecular Beam Epitaxy of BaSi2 Films with Grain Size over 4 µm on Si(111). Japanese Journal of Applied Physics. 51(9R). 98003–98003. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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