A. Ortíz-Conde

5.1k total citations · 1 hit paper
153 papers, 4.0k citations indexed

About

A. Ortíz-Conde is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, A. Ortíz-Conde has authored 153 papers receiving a total of 4.0k indexed citations (citations by other indexed papers that have themselves been cited), including 148 papers in Electrical and Electronic Engineering, 22 papers in Atomic and Molecular Physics, and Optics and 21 papers in Biomedical Engineering. Recurrent topics in A. Ortíz-Conde's work include Advancements in Semiconductor Devices and Circuit Design (114 papers), Semiconductor materials and devices (83 papers) and Silicon Carbide Semiconductor Technologies (62 papers). A. Ortíz-Conde is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (114 papers), Semiconductor materials and devices (83 papers) and Silicon Carbide Semiconductor Technologies (62 papers). A. Ortíz-Conde collaborates with scholars based in Venezuela, United States and Mexico. A. Ortíz-Conde's co-authors include Francisco J. García-Sánchez, Juan Muci, J.J. Liou, A. Cerdeira, M. Estrada, Y. Yue, J.G. Fossum, Juin J. Liou, H. Shichijo and S. Banerjee and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Journal of Solid-State Circuits.

In The Last Decade

A. Ortíz-Conde

146 papers receiving 3.8k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

A review of recent MOSFET threshold voltage extraction methods

2002 733 citations A. Ortíz-Conde, Francisco J. García-Sánchez et al. profile →

Peers

Countries citing papers authored by A. Ortíz-Conde

Since Specialization

Citations

This map shows the geographic impact of A. Ortíz-Conde's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Ortíz-Conde with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Ortíz-Conde more than expected).

Fields of papers citing papers by A. Ortíz-Conde

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Ortíz-Conde. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Ortíz-Conde. The network helps show where A. Ortíz-Conde may publish in the future.

Co-authorship network of co-authors of A. Ortíz-Conde

This figure shows the co-authorship network connecting the top 25 collaborators of A. Ortíz-Conde. A scholar is included among the top collaborators of A. Ortíz-Conde based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Ortíz-Conde. A. Ortíz-Conde is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Some considerations about Lambert W function-based nanoscale MOSFET charge control modeling 2025 ·Solid-State Electronics ·A. Ortíz-Conde, (unknown), Paula Ghedini Der Agopian, João Antônio Martino, Francisco J. García-Sánchez	0
2	Parameter extraction using the transfer characteristics of vertically stacked Si nanosheet MOSFETs 2024 ·Journal of Integrated Circuits and Systems ·A. Ortíz-Conde, (unknown), A. Veloso, Paula Ghedini Der Agopian, (unknown), João Antônio Martino, Francisco J. García-Sánchez	1
3	Analytic solution of carrier concentration as an explicit function of gate voltage in AlGaN/GaN HEMTs using the Lambert W‐function 2023 ·International Journal of Numerical Modelling Electronic Networks Devices and Fields ·(unknown), (unknown), (unknown), Z. Ouennoughi, A. Ortíz-Conde	1
4	Deep UV Sensors Enabling Solar-Blind Flame Detectors for Large-Area Applications 2021 ·IEEE Sensors Journal ·(unknown), Maria Isabel Pintor‐Monroy, A. Ortíz-Conde, J. A. Caraveo-Frescas, Manuel Quevedo-López	28
5	Extraction of Mobility Degradation and Source-and-Drain Resistance in MOSFETs 2020 ·Journal of Integrated Circuits and Systems ·Juan Muci, (unknown), Francisco J. García-Sánchez, (unknown), A. Ortíz-Conde, Chia-Tung Ho, Juin J. Liou, Marcelo Antonio Pavanello, Rodrigo T. Doria	1
6	Impact of Schottky contacts on p-type back enhanced SOI MOSFETs 2020 ·Solid-State Electronics ·(unknown), (unknown), K. R. A. Sasaki, A. Ortíz-Conde, João Antônio Martino	3
7	Systematic Characterization of Tunnel FETs Using a Universal Compact Model 2015 ·IEEE Transactions on Electron Devices ·Francisco J. García-Sánchez, A. Ortíz-Conde, Juan Muci, (unknown)	2
8	Lumped Parameter Modeling of Organic Solar Cells’ S-Shaped I–V Characteristics 2012 ·IEEE Journal of Photovoltaics ·Francisco J. García-Sánchez, (unknown), Juan Muci, A. Ortíz-Conde	37
9	A formula for the central potential’s maximum magnitude in arbitrarily doped symmetric double-gate MOSFETs 2012 ·Solid-State Electronics ·Francisco J. García-Sánchez, A. Ortíz-Conde	3
10	A General Analytical solution to the One-Dimensional Undoped Oxide-Silicon-Oxide System 2006 ·A. Ortíz-Conde, Francisco J. García-Sánchez, Juan Muci, Slavica Malobabic	10
11	Analytic Solution of the Channel Potential in Undoped Symmetric Dual-Gate MOSFETs 2005 ·IEEE Transactions on Electron Devices ·A. Ortíz-Conde, Francisco J. García-Sánchez, Slavica Malobabic	72
12	On the physical mechanism contributing to the difference between drain and source resistances in short-channel MOSFETs 2002 ·A. Ortíz-Conde, Juin J. Liou, (unknown), Francisco J. García-Sánchez	1
13	A method to extract mobility degradation and total series resistance of fully-depleted SOI MOSFETs 2002 ·IEEE Transactions on Electron Devices ·Francisco J. García-Sánchez, A. Ortíz-Conde, A. Cerdeira, M. Estrada, Denis Flandre, Juin J. Liou	21
14	A simple procedure to extract the threshold voltage of amorphous thin film MOSFETs in the saturation region 2001 ·Solid-State Electronics ·A. Ortíz-Conde, A. Cerdeira, M. Estrada, Francisco J. García-Sánchez, (unknown)	26
15	Modeling real junctions by a series combination of two ideal diodes with parallel resistance and its parameter extraction 2001 ·Solid-State Electronics ·A. Ortíz-Conde, M. Estrada, A. Cerdeira, Francisco J. García-Sánchez, (unknown)	11
16	On the extraction of threshold voltage, effective channel length and series resistance of MOSFETs 2000 ·Journal of Telecommunications and Information Technology ·A. Ortíz-Conde, (unknown), Juin J. Liou	6
17	An overview on parameter extraction in field effect transistors 2000 ·A. Ortíz-Conde, Francisco J. García-Sánchez, Juin J. Liou	10
18	Drain and source resistances of short-channel LDD MOSFETs 1997 ·Solid-State Electronics ·(unknown), J.J. Liou, A. Ortíz-Conde, Francisco J. García-Sánchez, (unknown)	4
19	Determination of physical mechanisms contributing to the difference between drain and source resistances in short-channel MOSFETs 1996 ·Solid-State Electronics ·A. Ortíz-Conde, J.J. Liou, (unknown), Francisco J. García-Sánchez	15
20	The foundation of a charge-sheet model for the thin-film MOSFET 1988 ·Solid-State Electronics ·A. Ortíz-Conde, Francisco J. García-Sánchez, Pierre Schmidt, (unknown)	19

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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