A. M. Moy

483 total citations
28 papers, 368 citations indexed

About

A. M. Moy is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Biomedical Engineering. According to data from OpenAlex, A. M. Moy has authored 28 papers receiving a total of 368 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Atomic and Molecular Physics, and Optics, 20 papers in Electrical and Electronic Engineering and 12 papers in Biomedical Engineering. Recurrent topics in A. M. Moy's work include Semiconductor Quantum Structures and Devices (21 papers), Semiconductor Lasers and Optical Devices (10 papers) and Nanowire Synthesis and Applications (6 papers). A. M. Moy is often cited by papers focused on Semiconductor Quantum Structures and Devices (21 papers), Semiconductor Lasers and Optical Devices (10 papers) and Nanowire Synthesis and Applications (6 papers). A. M. Moy collaborates with scholars based in United States and China. A. M. Moy's co-authors include P. J. Pearah, K. Y. Cheng, K. C. Hsieh, K. Y. Cheng, K. C. Hsieh, Wentao Lu, Marcy Stutzman, Wei Liu, C. Y. Prescott and Shannon P. Harvey and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Journal of Quantum Electronics.

In The Last Decade

A. M. Moy

28 papers receiving 352 citations

Peers

A. M. Moy

AMPO

EEE

CMP

F. Williamson United States

T.J. Zamerowski United States

L. P. Erickson United States

Xiuguang Jin Japan

J. Vaitkus Lithuania

Mengjia Gaowei United States

R. R. Saxena United States

John Wright United States

S. L. Guo China

Ф. Фаллер Germany

F. Williamson United States

A. M. Moy

171 ×0.6

AMPO

189 ×0.9

EEE

65 ×0.5

39 ×0.5

26 ×0.4

CMP

Citations per year, relative to A. M. Moy A. M. Moy (= 1×) peers F. Williamson

Countries citing papers authored by A. M. Moy

Since Specialization

Citations

This map shows the geographic impact of A. M. Moy's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. M. Moy with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. M. Moy more than expected).

Fields of papers citing papers by A. M. Moy

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. M. Moy. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. M. Moy. The network helps show where A. M. Moy may publish in the future.

Co-authorship network of co-authors of A. M. Moy

This figure shows the co-authorship network connecting the top 25 collaborators of A. M. Moy. A scholar is included among the top collaborators of A. M. Moy based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. M. Moy. A. M. Moy is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Liu, Wei, et al.. (2018). Evaluation of GaAsSb/AlGaAs strained superlattice photocathodes. AIP Advances. 8(7). 2 indexed citations

Liu, Wei, et al.. (2016). Record-level quantum efficiency from a high polarization strained GaAs/GaAsP superlattice photocathode with distributed Bragg reflector. Applied Physics Letters. 109(25). 50 indexed citations

Moy, A. M., et al.. (2014). AlGaAsSb as a top cell material for InP-based triple-junction solar cells. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9226. 92260L–92260L. 1 indexed citations

Moy, A. M., et al.. (2013). A highly strained InAs/GaSb type II superlattice for LWIR detection. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8876. 887610–887610. 7 indexed citations

Moy, A. M., et al.. (2009). Improvement of R0A product of type-II InAs/GaSb superlattice MWIR/LWIR photodiodes. Infrared Physics & Technology. 52(6). 340–343. 5 indexed citations

Maruyama, Takashi, Dah-An Luh, A. Brachmann, et al.. (2005). POLARIZED ELECTRON EMISSION FROM STRAINED GaAs/GaAsP SUPERLATTICE PHOTOCATHODES. 917–921. 1 indexed citations

Hsieh, K. C., et al.. (1998). Improving the Al-bearing native-oxide/GaAs interface formed by wet oxidation with a thin GaP barrier layer. Applied Physics Letters. 72(21). 2722–2724. 6 indexed citations

Rich, Daniel H., et al.. (1998). An optical method for studying carrier diffusion in strained (InP)2/(GaP)2 quantum wires. Applied Physics Letters. 72(1). 55–57. 9 indexed citations

Moy, A. M., et al.. (1998). Temperature stabilized 1.55 μm photoluminescence in strained GaxIn1−xAs quantum wire heterostructures. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(3). 1352–1355. 7 indexed citations

10.

Moy, A. M., et al.. (1997). Growth of GaInAsP quantum wire heterostructures using the strain-induced lateral-layer ordering process. Journal of Crystal Growth. 175-176. 819–824. 7 indexed citations

11.

Rich, Daniel H., et al.. (1997). Spatial variations in luminescence and carrier relaxation in molecular beam epitaxial grown (InP)2/(GaP)2 quantum wires. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 15(4). 1034–1039. 5 indexed citations

12.

Moy, A. M., et al.. (1996). Visible wavelength (6470 Å) GaxIn1−xP/GaAs0.66P0.34 quantum wire heterostructures. Journal of Applied Physics. 80(12). 7124–7129. 5 indexed citations

13.

Higman, T. K., et al.. (1995). Ultrathin nitride layers grown by molecular-beam epitaxy and their effects on interface states in silicon metal–insulator–semiconductor field-effect transistors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(2). 786–788. 2 indexed citations

14.

Moy, A. M., et al.. (1995). Yellow (5735 Å) emission GaInP multiple quantum well lasers grown by gas source molecular-beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(2). 762–764. 3 indexed citations

15.

Moy, A. M., et al.. (1995). Effect of substrate misorientation on the growth of GaxIn1−x P lateral quantum wells. Applied Physics Letters. 66(20). 2694–2696. 27 indexed citations

16.

Moy, A. M., et al.. (1994). Yellow emission (573.5 nm) Ga _0.65 In _0.35 Plasers grown on GaAs _0.6 P _0.4 substrates by gas source molecular beam epitaxy. Electronics Letters. 30(24). 2049–2050. 3 indexed citations

17.

Pearah, P. J., et al.. (1993). Strained GaxIn1−xP multiple quantum wire light-emitting diodes: A luminescence polarization study. Applied Physics Letters. 62(7). 729–731. 24 indexed citations

18.

Pearah, P. J., et al.. (1993). Strained AlGaInP Multiple Quantum Wire Lasers Grown By Gas Source Molecular Beam Epitaxy. V29–V30. 1 indexed citations

19.

Moy, A. M., et al.. (1993). GaxIn1−xP multiple-quantum-wire heterostructures prepared by the strain induced lateral layer ordering process. Applied Physics Letters. 62(12). 1359–1361. 31 indexed citations

20.

Moy, A. M., et al.. (1993). Optimization of interfaces in arsenide–phosphide compounds grown by gas source molecular-beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 11(3). 826–829. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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