Yi Pei

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Ultra-wide bandgap semiconductor Ga2O3 power diodes

Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation

Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth