Standout Papers

The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs 2001 2026 2009 2017 1.0k
  1. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs (2001)
    R. Vetury, S. Keller et al. IEEE Transactions on Electron Devices

Immediate Impact

5 by Nobel laureates 6 from Science/Nature 61 standout
Sub-graph 1 of 22

Citing Papers

Electrochemical exfoliation of 2D materials beyond graphene
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2 intermediate papers

Works of R. Vetury being referenced

The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
2001 Standout
Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
1999

Author Peers

Author Last Decade Papers Cites
R. Vetury 1928 1281 887 17 2.0k
T. Prunty 1633 1334 729 18 1.7k
C. Poblenz 1906 1195 902 49 2.1k
S.T. Sheppard 1795 1627 674 33 2.2k
Tomás Palacios 1149 1004 612 26 1.5k
I. P. Smorchkova 2061 1070 1094 37 2.6k
Likun Shen 1331 958 621 17 1.5k
C. R. Elsass 1704 673 887 23 1.8k
A. Link 1408 456 812 29 1.5k
S. S. Lau 1655 1298 741 49 2.1k
J. Hilsenbeck 2068 1127 1114 21 2.3k

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