Standout Papers

Radiation Effects in MOS Oxides 2003 2026 2010 2018 540
  1. Radiation Effects in MOS Oxides (2008)
    James R. Schwank, M.R. Shaneyfelt et al. IEEE Transactions on Nuclear Science
  2. Basic mechanisms and modeling of single-event upset in digital microelectronics (2003)
    P.E. Dodd, L. W. Massengill IEEE Transactions on Nuclear Science

Immediate Impact

2 from Science/Nature 54 standout
Sub-graph 1 of 25

Citing Papers

An Adaptive Solid‐State Synapse with Bi‐Directional Relaxation for Multimodal Recognition and Spatio‐Temporal Learning
2025 Standout
A Network Intrusion Detection System with Broadband WO3–x/WO3–x‐Ag/WO3–x Optoelectronic Memristor
2024 Standout
1 intermediate paper

Works of P.E. Dodd being referenced

A Comparison of the Radiation Response of ${\rm TaO}_{\rm x}$ and ${\rm TiO}_2$ Memristors
2013

Author Peers

Author Last Decade Papers Cites
P.E. Dodd 5580 1353 200 340 132 5.8k
M.R. Shaneyfelt 7445 829 356 368 186 7.7k
L. W. Massengill 6636 2953 65 263 243 6.8k
Philippe Paillet 4309 452 431 477 203 4.8k
S. Büchner 3582 804 242 205 188 3.8k
J.R. Schwank 7002 685 421 269 140 7.5k
P.S. Winokur 5963 263 511 145 106 6.2k
K.F. Galloway 3662 189 232 80 196 4.0k
B. L. Bhuva 4201 2128 49 60 219 4.3k
F. B. McLean 3558 135 438 100 57 3.8k
R.L. Pease 3306 211 84 146 106 3.4k

All Works

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Rankless by CCL
2026