Standout Papers

C.M.O.S. devices fabricated on buried SiO <sup>2</sup> layers formed by oxygen implantation ... 1978 2026 1994 2010 392
  1. C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into silicon (1978)
    K. Izumi, M. Doken et al. Electronics Letters

Immediate Impact

3 from Science/Nature 19 standout
Sub-graph 1 of 10

Citing Papers

2022 Roadmap on integrated quantum photonics
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Parity–time-symmetric whispering-gallery microcavities
2014 Standout
2 intermediate papers

Works of M. Doken being referenced

C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into silicon
1978 Standout

Author Peers

Author Last Decade Papers Cites
M. Doken 416 57 5 100 70 9 435
K.P. MacWilliams 452 60 29 86 28 18 491
R.B. Iverson 442 38 11 294 82 13 494
Chih Hang Tung 389 40 38 131 18 13 429
A. Chou 398 46 19 88 21 14 418
K.S. Krisch 483 16 37 159 48 17 501
Hisashi Ariyoshi 445 61 5 116 72 11 471
G.J. Hu 427 19 8 77 15 9 434
T.C. Holloway 395 48 20 100 43 20 481
L. M. Ephrath 341 51 36 110 74 13 383
P. Packan 394 41 27 154 35 9 444

All Works

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2026