Xiaoye Qin

2.6k total citations · 1 hit paper
34 papers, 2.2k citations indexed

About

Xiaoye Qin is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Xiaoye Qin has authored 34 papers receiving a total of 2.2k indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 21 papers in Materials Chemistry and 9 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Xiaoye Qin's work include Semiconductor materials and devices (22 papers), 2D Materials and Applications (9 papers) and Ga2O3 and related materials (7 papers). Xiaoye Qin is often cited by papers focused on Semiconductor materials and devices (22 papers), 2D Materials and Applications (9 papers) and Ga2O3 and related materials (7 papers). Xiaoye Qin collaborates with scholars based in United States, China and South Korea. Xiaoye Qin's co-authors include Robert M. Wallace, Jiyoung Kim, Angelica Azcatl, Kyeongjae Cho, Lanxia Cheng, Rafik Addou, Stephen McDonnell, Moon J. Kim, Ning Lü and Hong Dong and has published in prestigious journals such as Nature Materials, Nano Letters and ACS Nano.

In The Last Decade

Xiaoye Qin

34 papers receiving 2.2k citations

Hit Papers

Two-dimensional gallium nitride realized via graphene enc... 2016 2026 2019 2022 2016 200 400 600

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Xiaoye Qin United States 18 1.8k 1.2k 428 379 256 34 2.2k
Shou‐Yi Kuo Taiwan 21 1.3k 0.7× 1.1k 0.9× 394 0.9× 270 0.7× 227 0.9× 104 1.6k
G. Benndorf Germany 20 1.2k 0.7× 776 0.7× 549 1.3× 151 0.4× 169 0.7× 43 1.5k
Hamad Rahman Jappor Iraq 43 3.1k 1.7× 1.5k 1.3× 479 1.1× 149 0.4× 146 0.6× 74 3.4k
E. Bekaroglu Türkiye 5 2.5k 1.3× 691 0.6× 332 0.8× 278 0.7× 145 0.6× 6 2.6k
X. H. Zhang Singapore 18 1.7k 0.9× 1.3k 1.1× 790 1.8× 159 0.4× 193 0.8× 31 2.0k
D.M. Hoat Vietnam 28 2.2k 1.2× 946 0.8× 654 1.5× 139 0.4× 81 0.3× 182 2.4k
Emre Gür Türkiye 22 914 0.5× 753 0.6× 406 0.9× 317 0.8× 201 0.8× 95 1.4k
Simon Hurand France 16 1.3k 0.7× 620 0.5× 535 1.3× 246 0.6× 207 0.8× 36 1.5k
Ilan Shalish Israel 18 1.2k 0.6× 896 0.8× 708 1.7× 429 1.1× 327 1.3× 46 1.6k
Dorj Odkhuu South Korea 23 1.4k 0.7× 719 0.6× 1.1k 2.5× 158 0.4× 129 0.5× 94 2.0k

Countries citing papers authored by Xiaoye Qin

Since Specialization
Citations

This map shows the geographic impact of Xiaoye Qin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Xiaoye Qin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Xiaoye Qin more than expected).

Fields of papers citing papers by Xiaoye Qin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Xiaoye Qin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Xiaoye Qin. The network helps show where Xiaoye Qin may publish in the future.

Co-authorship network of co-authors of Xiaoye Qin

This figure shows the co-authorship network connecting the top 25 collaborators of Xiaoye Qin. A scholar is included among the top collaborators of Xiaoye Qin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Xiaoye Qin. Xiaoye Qin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zhang, Jiong, et al.. (2023). Critical three-dimensional metrologies for emerging nanoelectronics. Journal of Micro/Nanopatterning Materials and Metrology. 22(3). 1 indexed citations
2.
Feng, Ze, Xiaoye Qin, Xiaohong Chen, et al.. (2022). In situ isotope study of indium diffusion in InP/Al2O3 stacks. Applied Physics Letters. 120(3). 3 indexed citations
3.
Barton, Adam T., Lee A. Walsh, Christopher M. Smyth, et al.. (2019). Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator Bi2Se3. ACS Applied Materials & Interfaces. 11(35). 32144–32150. 10 indexed citations
4.
Qin, Xiaoye, et al.. (2017). A crystalline oxide passivation on In0.53Ga0.47As (100). Journal of Applied Physics. 121(12). 9 indexed citations
5.
Dong, Hong, Cheng Gong, Rafik Addou, et al.. (2017). Schottky Barrier Height of Pd/MoS2 Contact by Large Area Photoemission Spectroscopy. ACS Applied Materials & Interfaces. 9(44). 38977–38983. 39 indexed citations
6.
Balushi, Zakaria Y. Al, Ke Wang, R. Ghosh, et al.. (2016). Two-dimensional gallium nitride realized via graphene encapsulation. Nature Materials. 15(11). 1166–1171. 641 indexed citations breakdown →
7.
Zhu, Hui, Xiaoye Qin, Lanxia Cheng, et al.. (2016). Remote Plasma Oxidation and Atomic Layer Etching of MoS2. ACS Applied Materials & Interfaces. 8(29). 19119–19126. 160 indexed citations
8.
Zhu, Hui, Xiaoye Qin, Angelica Azcatl, et al.. (2015). Surface and interfacial study of half cycle atomic layer deposited Al2O3 on black phosphorus. Microelectronic Engineering. 147. 1–4. 14 indexed citations
9.
Zhu, Hui, Stephen McDonnell, Xiaoye Qin, et al.. (2015). Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study. ACS Applied Materials & Interfaces. 7(23). 13038–13043. 81 indexed citations
10.
Azcatl, Angelica, Santosh KC, Xin Peng, et al.. (2015). HfO 2 on UV–O 3 exposed transition metal dichalcogenides: interfacial reactions study. 2D Materials. 2(1). 14004–14004. 103 indexed citations
11.
Qin, Xiaoye, Antonio T. Lucero, Angelica Azcatl, Jiyoung Kim, & Robert M. Wallace. (2014). In situ x-ray photoelectron spectroscopy and capacitance voltage characterization of plasma treatments for Al2O3/AlGaN/GaN stacks. Applied Physics Letters. 105(1). 21 indexed citations
12.
Dong, Hong, Xiaoye Qin, Barry Brennan, et al.. (2014). Silicon Interfacial Passivation Layer Chemistry for High-k/InP Interfaces. ACS Applied Materials & Interfaces. 6(10). 7340–7345. 12 indexed citations
13.
Cheng, Lanxia, Xiaoye Qin, Antonio T. Lucero, et al.. (2014). Atomic Layer Deposition of a High-k Dielectric on MoS2 Using Trimethylaluminum and Ozone. ACS Applied Materials & Interfaces. 6(15). 11834–11838. 118 indexed citations
14.
Dong, Hong, Santosh KC, Angelica Azcatl, et al.. (2013). In situ study of e-beam Al and Hf metal deposition on native oxide InP (100). Journal of Applied Physics. 114(20). 6 indexed citations
15.
Qin, Xiaoye, et al.. (2013). Impact of N2 and forming gas plasma exposure on the growth and interfacial characteristics of Al2O3 on AlGaN. Applied Physics Letters. 103(22). 27 indexed citations
16.
Dong, Hong, Rohit Galatage, Santosh KC, et al.. (2013). Indium diffusion through high-k dielectrics in high-k/InP stacks. Applied Physics Letters. 103(6). 31 indexed citations
17.
Gong, Cheng, Stephen McDonnell, Xiaoye Qin, et al.. (2013). Realistic Metal–Graphene Contact Structures. ACS Nano. 8(1). 642–649. 84 indexed citations
18.
Brennan, Barry, Xiaoye Qin, Hong Dong, Jiyoung Kim, & Robert M. Wallace. (2012). In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN. Applied Physics Letters. 101(21). 211604–211604. 37 indexed citations
19.
Zhang, Qingfeng, Shenglin Jiang, Yike Zeng, et al.. (2011). Dielectric and pyroelectric properties of Ba-modified lead lanthanum zirconate stannate titanate ceramics. Materials Science and Engineering B. 176(10). 816–820. 9 indexed citations
20.
Zeng, Yike, Xiaoye Qin, Shenglin Jiang, Guangzu Zhang, & Ling Zhang. (2010). Effect of BaF 2 Addition on Crystallization Kinetics and Dielectric Properties of B 2 O 3 –Nb 2 O 5 –SrO–BaO Glass–Ceramics. Journal of the American Ceramic Society. 94(2). 469–473. 33 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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