Wenxian Yang

568 total citations
46 papers, 450 citations indexed

About

Wenxian Yang is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Wenxian Yang has authored 46 papers receiving a total of 450 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Condensed Matter Physics, 22 papers in Electronic, Optical and Magnetic Materials and 20 papers in Electrical and Electronic Engineering. Recurrent topics in Wenxian Yang's work include GaN-based semiconductor devices and materials (26 papers), Ga2O3 and related materials (21 papers) and ZnO doping and properties (17 papers). Wenxian Yang is often cited by papers focused on GaN-based semiconductor devices and materials (26 papers), Ga2O3 and related materials (21 papers) and ZnO doping and properties (17 papers). Wenxian Yang collaborates with scholars based in China, Japan and Germany. Wenxian Yang's co-authors include Shulong Lu, Yukun Zhao, Lifeng Bian, Jianya Zhang, Yuanyuan Wu, Min Jiang, Min Zhou, Zhiwei Xing, Dongmin Wu and Hua Qin and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Nano Energy.

In The Last Decade

Wenxian Yang

44 papers receiving 444 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Wenxian Yang China	14	259	206	193	157	136	46	450
Dongyang Luo China	8	215 0.8×	144 0.7×	109 0.6×	74 0.5×	80 0.6×	16	356
Sheng Luo China	11	357 1.4×	256 1.2×	84 0.4×	97 0.6×	89 0.7×	43	548
Xuegang Chen China	14	198 0.8×	284 1.4×	210 1.1×	69 0.4×	39 0.3×	38	434
Zhonghao Du United States	14	338 1.3×	194 0.9×	249 1.3×	210 1.3×	17 0.1×	22	485
R. K. Rakshit India	14	226 0.9×	267 1.3×	211 1.1×	118 0.8×	55 0.4×	41	529
Everton Bonturim Brazil	7	262 1.0×	439 2.1×	345 1.8×	105 0.7×	61 0.4×	13	686
Andrea Pescaglini Ireland	9	189 0.7×	217 1.1×	167 0.9×	32 0.2×	164 1.2×	19	426
Der‐Yuh Lin Taiwan	16	448 1.7×	394 1.9×	85 0.4×	45 0.3×	95 0.7×	83	643
Jiajie Lin China	13	270 1.0×	191 0.9×	87 0.5×	46 0.3×	69 0.5×	35	413
Peggy Schoenherr Australia	11	242 0.9×	417 2.0×	226 1.2×	91 0.6×	136 1.0×	21	622

Countries citing papers authored by Wenxian Yang

Since Specialization

Citations

This map shows the geographic impact of Wenxian Yang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Wenxian Yang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Wenxian Yang more than expected).

Fields of papers citing papers by Wenxian Yang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Wenxian Yang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Wenxian Yang. The network helps show where Wenxian Yang may publish in the future.

Co-authorship network of co-authors of Wenxian Yang

This figure shows the co-authorship network connecting the top 25 collaborators of Wenxian Yang. A scholar is included among the top collaborators of Wenxian Yang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Wenxian Yang. Wenxian Yang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Gong, Yi, Aiqin Tian, Xuan Li, et al.. (2025). High-performance GaN-based green laser diodes with low thermal degradation via hybrid MOCVD-MBE growth. Applied Physics Letters. 127(7).

Zhang, Peng, Yi Gong, Ying Gu, et al.. (2024). The dichotomous role of oxygen in the ohmic contact formation on p-type GaN grown by MBE and MOCVD. Surfaces and Interfaces. 53. 104974–104974.

Li, Xuefei, et al.. (2024). Optimized InGaAs growth on GaP/Si(1 0 0) templates with different low-temperature layers. Journal of Crystal Growth. 632. 127632–127632. 1 indexed citations

Dai, Pan, Min Zhou, Min Jiang, et al.. (2023). Detach GaN-Based Film to Realize a Monolithic Bifunctional Device for Both Lighting and Detection. Nanomaterials. 13(2). 359–359. 1 indexed citations

Gu, Ying, Yi Gong, Peng Zhang, et al.. (2023). Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy. Nanomaterials. 13(8). 1346–1346. 5 indexed citations

Gu, Ying, et al.. (2023). Enhancing microstructure and device performance of InGaN quantum dot micro-LEDs through substrate off-cut angle modulation. Optics Letters. 48(24). 6460–6460. 1 indexed citations

Zhang, Peng, Ying Gu, Yi Gong, et al.. (2023). External Quantum Efficiency Enhancement of InGaN-Based Quantum Dot Green Micro-Light-Emitting Diode Arrays by Fabricating Full-A-Sided Triangular Mesa. ACS Photonics. 10(12). 4401–4407. 7 indexed citations

Zhang, Jianya, Bo Jiao, Jinfei Dai, et al.. (2022). Enhance the responsivity and response speed of self-powered ultraviolet photodetector by GaN/CsPbBr3 core-shell nanowire heterojunction and hydrogel. Nano Energy. 100. 107437–107437. 53 indexed citations

Zhang, Xue, Zhiwei Xing, Wenxian Yang, et al.. (2022). Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy. Nanomaterials. 12(5). 800–800. 3 indexed citations

10.

Jiang, Min, Yukun Zhao, Jianya Zhang, et al.. (2022). Flexible bidirectional self-powered photodetector with significantly reduced volume and accelerated response speed based on hydrogel and lift-off GaN-based nanowires. Fundamental Research. 4(2). 369–378. 11 indexed citations

11.

Xing, Zhiwei, Xue Zhang, Wenxian Yang, et al.. (2021). Improved photocatalytic activity and stability of InGaN quantum dots/C ₃ N ₄ heterojunction photoelectrode for CO ₂ reduction and hydrogen production. Nanotechnology. 32(50). 505705–505705. 2 indexed citations

12.

Yang, Wenxian, Xue Zhang, S. Jin, et al.. (2021). Bidirectional negative differential resistance in AlN/GaN resonant tunneling diodes grown on freestanding GaN. Applied Physics Letters. 119(6). 4 indexed citations

13.

Jiang, Min, Jianya Zhang, Zhiwei Xing, et al.. (2021). Self-powered visible photodetector with fast-response speed and high stability based on vertical (In,Ga)N nanowires. OSA Continuum. 4(9). 2381–2381. 14 indexed citations

14.

Zhou, Min, Yukun Zhao, Lifeng Bian, et al.. (2021). Dual-wavelength ultraviolet photodetector based on vertical (Al,Ga)N nanowires and graphene*. Chinese Physics B. 30(7). 78506–78506. 9 indexed citations

15.

Dai, Pan, Xinping Huang, Shuhong Nie, et al.. (2020). Optimization of ohmic contact on n-type GaAs by screen-printing silver paste. Japanese Journal of Applied Physics. 59(8). 81005–81005. 6 indexed citations

16.

Xing, Zhiwei, Wenxian Yang, Xuefei Li, et al.. (2019). Growth and Characterization of High In-content InGaN grown by MBE using Metal Modulated Epitaxy Technique (MME). Journal of Crystal Growth. 516. 57–62. 21 indexed citations

17.

Zhao, Yukun, Wenxian Yang, Shulong Lu, et al.. (2019). Cost-effective selective-area growth of GaN-based nanocolumns on silicon substrates by molecular-beam epitaxy. Journal of Crystal Growth. 514. 124–129. 4 indexed citations

18.

Xiao, Meng, Guifeng Chen, Runqing Yang, et al.. (2017). Effect of high temperature rapid thermal annealing on optical properties of InGaAsP grown by molecular beam epitaxy. Optical Materials Express. 7(11). 3826–3826. 4 indexed citations

19.

Chen, Guifeng, Mengxue Wang, Wenxian Yang, et al.. (2017). Optical properties of Zn-diffused InP layers for the planar-type InGaAs/InP photodetectors. Journal of Semiconductors. 38(12). 124004–124004. 2 indexed citations

20.

Yang, Wenxian, Pan Dai, Lian Ji, et al.. (2016). Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells. Applied Surface Science. 389. 673–678. 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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