T. Niwa

442 total citations
20 papers, 318 citations indexed

About

T. Niwa is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, T. Niwa has authored 20 papers receiving a total of 318 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 4 papers in Biomedical Engineering. Recurrent topics in T. Niwa's work include Radio Frequency Integrated Circuit Design (14 papers), Semiconductor Lasers and Optical Devices (8 papers) and Semiconductor Quantum Structures and Devices (7 papers). T. Niwa is often cited by papers focused on Radio Frequency Integrated Circuit Design (14 papers), Semiconductor Lasers and Optical Devices (8 papers) and Semiconductor Quantum Structures and Devices (7 papers). T. Niwa collaborates with scholars based in Japan and United States. T. Niwa's co-authors include Takahiro Fujii, Tohru OKA, A. Okamoto, H. Toyoshima, Y. Amamiya, H. Shimawaki, Osami Sakata, K. Honjo, Hideo Toyoshima and Akihiko Okamoto and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Journal of Solid-State Circuits.

In The Last Decade

T. Niwa

19 papers receiving 292 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Niwa Japan 10 277 163 100 48 44 20 318
S. Murad United Kingdom 11 276 1.0× 179 1.1× 123 1.2× 50 1.0× 50 1.1× 34 352
C. Bozada United States 10 343 1.2× 233 1.4× 71 0.7× 72 1.5× 48 1.1× 38 403
P.J. van der Wel Netherlands 12 254 0.9× 246 1.5× 178 1.8× 64 1.3× 43 1.0× 34 438
K. Haberland Germany 12 236 0.9× 195 1.2× 143 1.4× 102 2.1× 43 1.0× 24 340
H. Gräbeldinger Germany 9 250 0.9× 294 1.8× 125 1.3× 101 2.1× 103 2.3× 16 387
T. Takayama Japan 12 276 1.0× 200 1.2× 79 0.8× 63 1.3× 37 0.8× 28 358
A E Drakin Russia 11 369 1.3× 313 1.9× 54 0.5× 38 0.8× 23 0.5× 62 442
В. И. Зубков Russia 11 218 0.8× 242 1.5× 49 0.5× 122 2.5× 58 1.3× 72 339
J. P. Salerno United States 13 394 1.4× 420 2.6× 85 0.8× 92 1.9× 56 1.3× 31 528
Koichi Kamon Japan 11 306 1.1× 285 1.7× 116 1.2× 91 1.9× 37 0.8× 15 380

Countries citing papers authored by T. Niwa

Since Specialization
Citations

This map shows the geographic impact of T. Niwa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Niwa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Niwa more than expected).

Fields of papers citing papers by T. Niwa

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Niwa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Niwa. The network helps show where T. Niwa may publish in the future.

Co-authorship network of co-authors of T. Niwa

This figure shows the co-authorship network connecting the top 25 collaborators of T. Niwa. A scholar is included among the top collaborators of T. Niwa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Niwa. T. Niwa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Niwa, T., Takahiro Fujii, & Tohru OKA. (2017). High carrier activation of Mg ion-implanted GaN by conventional rapid thermal annealing. Applied Physics Express. 10(9). 91002–91002. 78 indexed citations
2.
Hosoya, K., Shin‐ichi Tanaka, Y. Amamiya, et al.. (2006). RF HBT oscillators with low-phase noise and high-power performance utilizing a (/spl lambda//4/spl plusmn//spl delta/) open-stubs resonator. IEEE Transactions on Circuits and Systems I Fundamental Theory and Applications. 53(8). 1670–1682. 10 indexed citations
3.
Niwa, T., et al.. (2003). A composite-collector InGaP/GaAs HBT with high ruggedness for GSM power amplifiers. 711–714. 9 indexed citations
4.
Hosoya, K., Shin‐ichi Tanaka, Y. Amamiya, T. Niwa, & H. Shimawaki. (2003). A low phase-noise 18-GHz HBT oscillator utilizing a (λ/4±δ) open stubs resonator. 1. 64–67. 7 indexed citations
5.
Hosoya, K., Shin‐ichi Tanaka, Y. Amamiya, et al.. (2002). A low phase-noise 38-GHz HBT MMIC oscillator utilizing a novel transmission line resonator. 1. 47–50. 13 indexed citations
6.
Amamiya, Y., et al.. (2002). Microwave low-noise GaAs HBTs. 2. 693–696. 4 indexed citations
7.
Amamiya, Y., et al.. (2002). 50-GHz bandwidth base-band amplifiers using GaAs-based HBTs. 143–146. 3 indexed citations
8.
Amamiya, Y., et al.. (2002). A high-sensitivity 40-Gbit/s optical receiver using packaged GaAs HBT-ICs. 155–156. 2 indexed citations
10.
Tanaka, Shōji, Y. Amamiya, T. Niwa, et al.. (2002). A Ka-band HBT MMIC power amplifier. 1. 553–556. 2 indexed citations
11.
12.
Kaneko, Tomoya, et al.. (2000). Design and fabrication of a millimeter-wave MMIC HBT VCO with consideration for modulation linearity and low phase noise. 41(1). 44–48. 1 indexed citations
13.
Suzuki, Yoshishige, H. Shimawaki, Y. Amamiya, et al.. (1998). 50-GHz-bandwidth baseband amplifiers using GaAs-based HBTs. IEEE Journal of Solid-State Circuits. 33(9). 1336–1341. 21 indexed citations
14.
Amamiya, Y., et al.. (1998). Microwave low-noise AlGaAs/InGaAs HBT's with p/sup +/-regrown base contacts. IEEE Electron Device Letters. 19(4). 121–123. 2 indexed citations
16.
Niwa, T., et al.. (1997). Formation of an regrowth interface without carrier depletion using electron cyclotron resonance hydrogen plasma. Journal of Crystal Growth. 175-176. 441–446. 8 indexed citations
17.
Toyoshima, Hideo, et al.. (1994). Suppression of In surface segregation and growth of modulation-doped N-AlGaAs/InGaAs/GaAs structures with a high In composition by molecular-beam epitaxy. Journal of Applied Physics. 75(8). 3908–3913. 29 indexed citations
18.
Niwa, T., et al.. (1993). Structure of fluoride/GaAs(111) heteroepitaxial interfaces. Surface Science. 282(3). 342–356. 9 indexed citations
19.
Toyoshima, H., et al.. (1993). In surface segregation and growth-mode transition during InGaAs growth by molecular-beam epitaxy. Applied Physics Letters. 63(6). 821–823. 69 indexed citations
20.
Hashizume, Hidetoshi, Munehiro Sugiyama, T. Niwa, Osami Sakata, & P. L. Cowan. (1992). Backreflection x-ray standing waves and crystal truncation rods as structure probe for epilayer–substrate systems. Review of Scientific Instruments. 63(1). 1142–1145. 26 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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