W.T. Lindley

1.5k citations

31 papers · 1.1k indexed · h-index 18

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 13
- Semiconductor materials and interfaces 5
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 8
- Advanced Semiconductor Detectors and Materials 7
- Radio Frequency Integrated Circuit Design 6
- Integrated Circuits and Semiconductor Failure Analysis 4
Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials 4
Instrumentation top 10%
Materials Chemistry
Computational Mechanics
- Ion-surface interactions and analysis 3

Co-authors: J.P. Donnelly C. M. Wolfe A.G. Foyt G. E. Stillman R.A. Murphy M. W. Geis D.D. Rathman D. J. Ehrlich
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Condensed Matter Physics
Journals: Applied Physics Letters (9 papers)Solid-State Electronics (5 papers)IEEE Electron Device Letters (2 papers)
Partner nations: United States

In The Last Decade

W.T. Lindley

30 papers receiving 956 citations

Peers

Countries citing papers authored by W.T. Lindley

Since Specialization

Citations

This map shows the geographic impact of W.T. Lindley's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W.T. Lindley with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W.T. Lindley more than expected).

Fields of papers citing papers by W.T. Lindley

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W.T. Lindley. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W.T. Lindley. The network helps show where W.T. Lindley may publish in the future.

Co-authorship network

The 25 scholars most cited alongside W.T. Lindley, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with W.T. Lindley Line = papers co-authored together W.T. Lindley links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond IEEE Electron Device Letters ·M. W. Geis,D.D. Rathman,D. J. Ehrlich,R.A. Murphy,W.T. Lindley	1987	173
2	Use of zone-melting recrystallization to fabricate a three-dimensional structure incorporating power bipolar and field-effect transistors IEEE Electron Device Letters ·M. W. Geis,I Turki,R. W. Mountain,N. P. Economou,W.T. Lindley,P.L. Hower	1986	2
3	VIB-5 millimeter-wavelength GaAs permeable base transistors IEEE Transactions on Electron Devices ·G.D. Alley,K. B. Nichols,Cullinan Paul,S. Rabe,J. P. Salerno,B. A. Vojak,C. O. Bozler,N. P. Economou,D. C. Flanders,M. W. Geis,G. A. Lincoln,W.T. Lindley,R.W. McClelland,R.A. Murphy	1982	2
4	Recent experimental results on permeable base transistors G.D. Alley,C. O. Bozler,D. C. Flanders,R.A. Murphy,W.T. Lindley	1980	4
5	Low-dose n-type ion implantation into Cr-doped GaAs substrates Solid-State Electronics ·J.P. Donnelly,C. O. Bozler,W.T. Lindley	1977	26
6	Submillimeter Heterodyne Detection with Planar GaAs Schottky-Barrier Diodes IEEE Transactions on Microwave Theory and Techniques ·R.A. Murphy,C. O. Bozler,C. D. Parker,H. R. Fetterman,P. E. Tannenwald,B. J. Clifton,J.P. Donnelly,W.T. Lindley	1977	23
7	New c.c.d. programmable transversal filter Electronics Letters ·Barry E. Burke,W.T. Lindley	1977	13
8	High-efficiency ion-implanted lo-hi-lo GaAs IMPATT diodes Applied Physics Letters ·C. O. Bozler,J.P. Donnelly,R.A. Murphy,Meagan M. Moore,Luciana Alves Pereira,W.T. Lindley	1976	31
9	Impurity gettering in semi-insulating gallium arsenide using ion-implantation damage Applied Physics Letters ·C. O. Bozler,J.P. Donnelly,W.T. Lindley,Rick A. Reynolds	1976	11
10	Silicon- and selenium-ion-implanted GaAs reproducibly annealed at temperatures up to 950 °C Applied Physics Letters ·J.P. Donnelly,W.T. Lindley,C. E. Hurwitz	1975	72
11	Performance and Reliability of K/sub a/-Band GaAs IMPATT Diodes R.A. Murphy,W.T. Lindley,Dean F. Peterson,Yong-Ki Cho	1974	1
12	Schottky barrier InxGa1−xAs alloy avalanche photodiodes for 1.06 μm Applied Physics Letters ·G. E. Stillman,C. M. Wolfe,A.G. Foyt,W.T. Lindley	1974	39
13	Stripe-geometry Pb<inf>1-x</inf>Sn<inf>x</inf>Te diode lasers IEEE Journal of Quantum Electronics ·R.W. Ralston,I. Melngailis,A. R. Calawa,W.T. Lindley	1973	18
14	Pb1−xSnxTe photovoltaic diodes and diode lasers produced by proton bombardment Solid-State Electronics ·J.P. Donnelly,A. R. Calawa,T. C. Harman,A.G. Foyt,W.T. Lindley	1972	20
15	Diffusion effects in GaAs Schottky barrier impatts P.T. Greiling,R.A. Murphy,W.T. Lindley,Luciana Alves Pereira,G.I. Haddad	1972	2
16	MIS electroluminescent diodes in ZnTe Solid-State Electronics ·J.P. Donnelly,A.G. Foyt,W.T. Lindley,G.W. Iseler	1970	24
17	Electron Mobility in High-Purity GaAs Journal of Applied Physics ·C. M. Wolfe,G. E. Stillman,W.T. Lindley	1970	212
18	Epitaxially Grown Guard Rings for GaAs Diodes Journal of The Electrochemical Society ·C. M. Wolfe,W.T. Lindley	1969	2
19	Isolation of junction devices in GaAs using proton bombardment Solid-State Electronics ·A.G. Foyt,W.T. Lindley,C. M. Wolfe,J.P. Donnelly	1969	111
20	TYPE CONVERSION AND p-n JUNCTIONS IN n-CdTe PRODUCED BY ION IMPLANTATION Applied Physics Letters ·J.P. Donnelly,A.G. Foyt,E. D. Hinkley,W.T. Lindley,J. O. Dimmock	1968	34

About W.T. Lindley

W.T. Lindley is a scholar working on Atomic and Molecular Physics, and Optics, Instrumentation, Electrical and Electronic Engineering, Condensed Matter Physics and Astronomy and Astrophysics, having authored 31 papers that have together received 1.1k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (13 papers), Semiconductor materials and devices (8 papers), Advanced Semiconductor Detectors and Materials (7 papers), Radio Frequency Integrated Circuit Design (6 papers), Semiconductor materials and interfaces (5 papers), Integrated Circuits and Semiconductor Failure Analysis (4 papers), GaN-based semiconductor devices and materials (4 papers) and Ion-surface interactions and analysis (3 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (559 citations), Electrical and Electronic Engineering (843 citations), Condensed Matter Physics (100 citations), Instrumentation (26 citations) and Materials Chemistry (349 citations). W.T. Lindley has collaborated with scholars based in United States. Frequent co-authors include J.P. Donnelly, C. M. Wolfe, A.G. Foyt, G. E. Stillman, R.A. Murphy, M. W. Geis, D.D. Rathman, D. J. Ehrlich, C. E. Hurwitz and C. O. Bozler. Their work appears in journals such as Applied Physics Letters, Solid-State Electronics, IEEE Electron Device Letters, Journal of Applied Physics and IEEE Transactions on Microwave Theory and Techniques.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact