W.T. Lindley

1.5k total citations
31 papers, 1.1k citations indexed

About

W.T. Lindley is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, W.T. Lindley has authored 31 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 19 papers in Atomic and Molecular Physics, and Optics and 4 papers in Condensed Matter Physics. Recurrent topics in W.T. Lindley's work include Semiconductor Quantum Structures and Devices (13 papers), Semiconductor materials and devices (8 papers) and Advanced Semiconductor Detectors and Materials (7 papers). W.T. Lindley is often cited by papers focused on Semiconductor Quantum Structures and Devices (13 papers), Semiconductor materials and devices (8 papers) and Advanced Semiconductor Detectors and Materials (7 papers). W.T. Lindley collaborates with scholars based in United States. W.T. Lindley's co-authors include J.P. Donnelly, C. M. Wolfe, A.G. Foyt, G. E. Stillman, R.A. Murphy, M. W. Geis, D.D. Rathman, D. J. Ehrlich, C. E. Hurwitz and C. O. Bozler and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

W.T. Lindley

30 papers receiving 956 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
W.T. Lindley United States 18 843 559 349 114 110 31 1.1k
P. A. Barnes United States 19 772 0.9× 599 1.1× 213 0.6× 89 0.8× 83 0.8× 50 1.1k
A.G. Foyt United States 18 737 0.9× 502 0.9× 185 0.5× 87 0.8× 38 0.3× 31 861
R.N. Thomas United States 22 1.0k 1.2× 618 1.1× 416 1.2× 115 1.0× 42 0.4× 47 1.3k
J. D. Benson United States 21 1.4k 1.7× 614 1.1× 407 1.2× 68 0.6× 74 0.7× 119 1.6k
D. D. Edwall United States 26 1.9k 2.3× 1.3k 2.3× 388 1.1× 50 0.4× 108 1.0× 95 2.1k
H. Beneking Germany 20 1.2k 1.4× 823 1.5× 151 0.4× 58 0.5× 34 0.3× 140 1.3k
J.C. Irvin United States 12 1.3k 1.5× 782 1.4× 367 1.1× 96 0.8× 18 0.2× 29 1.5k
Horst Schreiber Germany 16 376 0.4× 221 0.4× 169 0.5× 73 0.6× 111 1.0× 55 644
W. V. McLevige United States 18 852 1.0× 508 0.9× 92 0.3× 63 0.6× 32 0.3× 51 924
N. Sclar United States 12 520 0.6× 407 0.7× 223 0.6× 43 0.4× 72 0.7× 23 798

Countries citing papers authored by W.T. Lindley

Since Specialization
Citations

This map shows the geographic impact of W.T. Lindley's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W.T. Lindley with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W.T. Lindley more than expected).

Fields of papers citing papers by W.T. Lindley

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W.T. Lindley. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W.T. Lindley. The network helps show where W.T. Lindley may publish in the future.

Co-authorship network of co-authors of W.T. Lindley

This figure shows the co-authorship network connecting the top 25 collaborators of W.T. Lindley. A scholar is included among the top collaborators of W.T. Lindley based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W.T. Lindley. W.T. Lindley is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Geis, M. W., D.D. Rathman, D. J. Ehrlich, R.A. Murphy, & W.T. Lindley. (1987). High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond. IEEE Electron Device Letters. 8(8). 341–343. 173 indexed citations
2.
Geis, M. W., et al.. (1986). Use of zone-melting recrystallization to fabricate a three-dimensional structure incorporating power bipolar and field-effect transistors. IEEE Electron Device Letters. 7(1). 41–43. 2 indexed citations
3.
Alley, G.D., K. B. Nichols, S. Rabe, et al.. (1982). VIB-5 millimeter-wavelength GaAs permeable base transistors. IEEE Transactions on Electron Devices. 29(10). 1708–1708. 2 indexed citations
4.
Alley, G.D., C. O. Bozler, D. C. Flanders, R.A. Murphy, & W.T. Lindley. (1980). Recent experimental results on permeable base transistors. 608–612. 4 indexed citations
5.
Donnelly, J.P., C. O. Bozler, & W.T. Lindley. (1977). Low-dose n-type ion implantation into Cr-doped GaAs substrates. Solid-State Electronics. 20(3). 273–276. 26 indexed citations
6.
Murphy, R.A., C. O. Bozler, C. D. Parker, et al.. (1977). Submillimeter Heterodyne Detection with Planar GaAs Schottky-Barrier Diodes. IEEE Transactions on Microwave Theory and Techniques. 25(6). 494–495. 23 indexed citations
7.
Burke, Barry E. & W.T. Lindley. (1977). New c.c.d. programmable transversal filter. Electronics Letters. 13(18). 521–523. 13 indexed citations
8.
Bozler, C. O., et al.. (1976). High-efficiency ion-implanted lo-hi-lo GaAs IMPATT diodes. Applied Physics Letters. 29(2). 123–125. 31 indexed citations
9.
Bozler, C. O., J.P. Donnelly, W.T. Lindley, & Rick A. Reynolds. (1976). Impurity gettering in semi-insulating gallium arsenide using ion-implantation damage. Applied Physics Letters. 29(11). 698–699. 11 indexed citations
10.
Donnelly, J.P., W.T. Lindley, & C. E. Hurwitz. (1975). Silicon- and selenium-ion-implanted GaAs reproducibly annealed at temperatures up to 950 °C. Applied Physics Letters. 27(1). 41–43. 72 indexed citations
11.
Murphy, R.A., et al.. (1974). Performance and Reliability of K/sub a/-Band GaAs IMPATT Diodes. 59. 315–317. 1 indexed citations
12.
Stillman, G. E., C. M. Wolfe, A.G. Foyt, & W.T. Lindley. (1974). Schottky barrier InxGa1−xAs alloy avalanche photodiodes for 1.06 μm. Applied Physics Letters. 24(1). 8–10. 39 indexed citations
13.
Ralston, R.W., I. Melngailis, A. R. Calawa, & W.T. Lindley. (1973). Stripe-geometry Pb<inf>1-x</inf>Sn<inf>x</inf>Te diode lasers. IEEE Journal of Quantum Electronics. 9(2). 350–356. 18 indexed citations
14.
Donnelly, J.P., A. R. Calawa, T. C. Harman, A.G. Foyt, & W.T. Lindley. (1972). Pb1−xSnxTe photovoltaic diodes and diode lasers produced by proton bombardment. Solid-State Electronics. 15(4). 403–407. 20 indexed citations
15.
Greiling, P.T., et al.. (1972). Diffusion effects in GaAs Schottky barrier impatts. 84–86. 2 indexed citations
16.
Donnelly, J.P., A.G. Foyt, W.T. Lindley, & G.W. Iseler. (1970). MIS electroluminescent diodes in ZnTe. Solid-State Electronics. 13(6). 755–758. 24 indexed citations
17.
Wolfe, C. M., G. E. Stillman, & W.T. Lindley. (1970). Electron Mobility in High-Purity GaAs. Journal of Applied Physics. 41(7). 3088–3091. 212 indexed citations
18.
Wolfe, C. M. & W.T. Lindley. (1969). Epitaxially Grown Guard Rings for GaAs Diodes. Journal of The Electrochemical Society. 116(2). 276–276. 2 indexed citations
19.
Foyt, A.G., W.T. Lindley, C. M. Wolfe, & J.P. Donnelly. (1969). Isolation of junction devices in GaAs using proton bombardment. Solid-State Electronics. 12(4). 209–214. 111 indexed citations
20.
Donnelly, J.P., A.G. Foyt, E. D. Hinkley, W.T. Lindley, & J. O. Dimmock. (1968). TYPE CONVERSION AND p-n JUNCTIONS IN n-CdTe PRODUCED BY ION IMPLANTATION. Applied Physics Letters. 12(9). 303–305. 34 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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