V.V. Belyakov

487 citations

61 papers · 353 · h-index 10

Impact in

Hardware and Architecture top 10%
- VLSI and Analog Circuit Testing
Electrical and Electronic Engineering
- Radiation Effects in Electronics
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing

Papers in

Electrical and Electronic Engineering 38
- Semiconductor materials and devices 25
- Radiation Effects in Electronics 23
- Advancements in Semiconductor Devices and Circuit Design 18
- Integrated Circuits and Semiconductor Failure Analysis 9
Biomedical Engineering 9
- Advanced Chemical Sensor Technologies 8

Co-authors: В.С. Першенков (36 shared papers)Armen V. Sogoyan (7 shared papers)A.Y. Nikiforov (4 shared papers)A. I. Chumakov (4 shared papers)Gennady I. Zebrev (6 shared papers)В.А. Скуратов (1 shared paper)S. Avdeev (2 shared papers)В. Б. Бетелин (5 shared papers)
Journals: IEEE Transactions on Nuclear Science (12 papers)Microelectronics Reliability (6 papers)Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment (1 paper)International Journal of Nanotechnology (1 paper)Russian Microelectronics (3 papers)
Partner nations: Russia Czechia Australia

In The Last Decade

V.V. Belyakov

55 papers receiving 320 citations

Peers

Countries citing papers authored by V.V. Belyakov

Since Specialization

Citations

This map shows the geographic impact of V.V. Belyakov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V.V. Belyakov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V.V. Belyakov more than expected).

Fields of papers citing papers by V.V. Belyakov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V.V. Belyakov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V.V. Belyakov. The network helps show where V.V. Belyakov may publish in the future.

Co-authors

The 20 scholars most cited alongside V.V. Belyakov, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with V.V. Belyakov Line = papers co-authored together V.V. Belyakov links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 61 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	The effect of emitter junction bias on the low dose-rate radiation response of bipolar devices IEEE Transactions on Nuclear Science ·В.С. Першенков, V.B. Maslov, S.V. Cherepko, I.N. Shvetzov-Shilovsky, V.V. Belyakov, Armen V. Sogoyan, V.I. Rusanovsky, V.N. Ulimov, В. В. Емельянов, V.S. Nasibullin	1997	42
2	Use of MOS structures for the investigation of low-dose-rate effects in bipolar transistors IEEE Transactions on Nuclear Science ·V.V. Belyakov, В.С. Першенков, A.V. Shal'nov, I.N. Shvetzov-Shilovsky	1995	38
3	Methods for the Prediction of Total-Dose Effects on Modern Integrated Semiconductor Devices in Space: A Review Russian Microelectronics ·V.V. Belyakov, В.С. Першенков, Gennady I. Zebrev, Armen V. Sogoyan, A. I. Chumakov, A.Y. Nikiforov, П. К. Скоробогатов	2003	19
4	IC’s radiation effects modeling and estimation Microelectronics Reliability ·V.V. Belyakov, A. I. Chumakov, A.Y. Nikiforov, В.С. Першенков, П. К. Скоробогатов, Armen V. Sogoyan	2000	17
5	Proposed two-level Acceptor-Donor (AD) center and the nature of switching traps in irradiated MOS structures IEEE Transactions on Nuclear Science ·В.С. Першенков, S.V. Cherepko, Armen V. Sogoyan, V.V. Belyakov, V.N. Ulimov, V.V. Abramov, A.V. Shal'nov, V.I. Rusanovsky	1996	16
6	X-ray ion mobility spectrometer Microelectronics Reliability ·В.С. Першенков, A.D. Tremasov, V.V. Belyakov, A.U. Razvalyaev, V. S. Mochkin	2005	14
7	Three-point method of prediction of MOS device response in space environments IEEE Transactions on Nuclear Science ·В.С. Першенков, V.V. Belyakov, S.V. Cherepko, I.N. Shvetzov-Shilovsky	1993	11
8	Shielding characteristics of polymer-based concretes in neutron-radiation fields Atomic Energy ·V.V. Belyakov, В. А. Григорьев, �. V. Kozlov, P.A. Lavdanskii, В. М. Назаров, O. A. Remeiko	1977	11
9	Reversible positive charge annealing in MOS transistor during variety of electrical and thermal stresses IEEE Transactions on Nuclear Science ·В. В. Емельянов, Gennady I. Zebrev, V.N. Ulimov, Rustem G. Useinov, V.V. Belyakov, В.С. Першенков	1996	10
10	Low-Capacity Hydrogen Liquefier with a Helium Cycle Chemical and Petroleum Engineering ·V.V. Belyakov, B. D. Krakovskii, O. M. Popov, G. Kh. Step, В. Н. Удут	2002	10
11	Prediction of Local and Global Ionization Effects on ICs: The Synergy between Numerical and Physical Simulation Russian Microelectronics ·V.V. Belyakov, A. I. Chumakov, A.Y. Nikiforov, В.С. Першенков, П. К. Скоробогатов, Armen V. Sogoyan	2003	9
12	Fast switched-bias annealing of radiation-induced oxide-trapped charge and its application for testing of radiation effects in MOS structures IEEE Transactions on Nuclear Science ·В.С. Першенков, V.V. Belyakov, A.V. Shal'nov	1994	9
13	The effect of junction fringing field on radiation-induced leakage current in oxide isolation structures and nonuniform damage near the channel edges in MOSFETs IEEE Transactions on Nuclear Science ·В.С. Першенков, M.S. Chirokov, P.T. Bretchko, P.O. Fastenko, V. K. Baev, V.V. Belyakov	1994	9
14	Exhaled Breath Analysis in Diagnostics of Cardiovascular Diseases Kardiologiia ·Bykova Aa, L. K. Malinovskaya, P. Sh. Chomakhidze, O. V. Trushina, Y R Shaltaeva, V.V. Belyakov, A. V. Golovin, В.С. Першенков, Syrkin Al, В. Б. Бетелин, Philipp Kopylov	2019	8
15	Extracting the fitting parameters for the conversion model of enhanced low dose rate sensitivity in bipolar devices Russian Microelectronics ·Alexander S. Bakerenkov, V.V. Belyakov, В.С. Першенков, А. А. Романенко, D. V. Savchenkov, V.V. Shurenkov	2013	8
16	Proton Transfer Reaction Mass Spectrometry of Exhaled Breath in Diagnostics of Heart Failure Kardiologiia ·Philipp Kopylov, Syrkin Al, P. Sh. Chomakhidze, Bykova Aa, D Yu Shhekochihin, Y R Shaltaeva, V.V. Belyakov, В.С. Першенков, Nikolay Samotaev, A. V. Golovin, В. К. Васильев, E. Malkin, E. Gromov, И. А. Иванов, D. Lipatov, D Ju Yakovlev, В. Б. Бетелин	2016	7
17	Effect of electron traps on reversibility of annealing IEEE Transactions on Nuclear Science ·В.С. Першенков, V.V. Belyakov, S.V. Cherepko, A.Y. Nikiforov, Armen V. Sogoyan, V.N. Ulimov, В. В. Емельянов	1995	7
18	True dose rate physical mechanism of ELDRS effect in bipolar devices Microelectronics Reliability ·В.С. Першенков, Aleksandr S. Petrov, Alexander S. Bakerenkov, V.N. Ulimov, V.A. Felytsyn, A S Rodin, V.V. Belyakov, V. A. Telets, V.V. Shurenkov	2017	7
19	Effect of emitter-base bias during pre-irradiation infrared illumination on the radiation response of bipolar transistors IEEE Transactions on Nuclear Science ·В.С. Першенков, A.Y. Bashin, Gennady I. Zebrev, S. Avdeev, V.V. Belyakov, V.N. Ulimov, В. В. Емельянов	2002	7
20	Temperature control system for the study of single event effects in integrated circuits using a cyclotron accelerator Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·Alexander S. Bakerenkov, V.V. Belyakov, Alexander E. Kozyukov, В.С. Першенков, A.V. Solomatin, V.V. Shurenkov	2014	6

About V.V. Belyakov

V.V. Belyakov is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Spectroscopy, Radiation and Hardware and Architecture, having authored 61 papers that have together received 353 indexed citations. Recurring topics across this work include Semiconductor materials and devices (25 papers), Radiation Effects in Electronics (23 papers), Advancements in Semiconductor Devices and Circuit Design (18 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers), Advanced Chemical Sensor Technologies (8 papers), Mass Spectrometry Techniques and Applications (8 papers), Analytical Chemistry and Chromatography (4 papers) and VLSI and Analog Circuit Testing (4 papers). The work is most often cited by research in Hardware and Architecture (34 citations), Electrical and Electronic Engineering (266 citations), Energy Engineering and Power Technology (10 citations), Spectroscopy (32 citations) and Radiation (16 citations). V.V. Belyakov has collaborated with scholars based in Russia, Czechia and Australia. Frequent co-authors include В.С. Першенков, Armen V. Sogoyan, A.Y. Nikiforov, A. I. Chumakov, Gennady I. Zebrev, В.А. Скуратов, S. Avdeev, В. Б. Бетелин, Vasily S. Anashin and Syrkin Al. Their work appears in journals such as IEEE Transactions on Nuclear Science, Microelectronics Reliability, Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, International Journal of Nanotechnology and Russian Microelectronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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V.V. Belyakov

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