В.С. Першенков

622 total citations
59 papers, 465 citations indexed

About

В.С. Першенков is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Spectroscopy. According to data from OpenAlex, В.С. Першенков has authored 59 papers receiving a total of 465 indexed citations (citations by other indexed papers that have themselves been cited), including 48 papers in Electrical and Electronic Engineering, 7 papers in Biomedical Engineering and 6 papers in Spectroscopy. Recurrent topics in В.С. Першенков's work include Semiconductor materials and devices (38 papers), Advancements in Semiconductor Devices and Circuit Design (27 papers) and Radiation Effects in Electronics (25 papers). В.С. Першенков is often cited by papers focused on Semiconductor materials and devices (38 papers), Advancements in Semiconductor Devices and Circuit Design (27 papers) and Radiation Effects in Electronics (25 papers). В.С. Першенков collaborates with scholars based in Russia, United States and Czechia. В.С. Першенков's co-authors include V.V. Belyakov, Armen V. Sogoyan, A.Y. Nikiforov, Gennady I. Zebrev, A. I. Chumakov, Dmitry V. Boychenko, Alexander Y. Nikiforov, Philipp Kopylov, Nikolay Samotaev and В. Б. Бетелин and has published in prestigious journals such as Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, IEEE Transactions on Nuclear Science and Microelectronics Reliability.

In The Last Decade

В.С. Першенков

57 papers receiving 428 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
В.С. Першенков Russia 13 404 43 35 28 24 59 465
K. Tittelbach‐Helmrich Germany 9 213 0.5× 28 0.7× 32 0.9× 4 0.1× 9 0.4× 49 293
R.L. Pease United States 14 814 2.0× 176 4.1× 41 1.2× 5 0.2× 51 2.1× 28 845
C. Chatry France 10 284 0.7× 58 1.3× 10 0.3× 3 0.1× 24 1.0× 20 314
H.P. Chou Taiwan 9 162 0.4× 6 0.1× 81 2.3× 3 0.1× 50 2.1× 37 249
Maxime Bernier France 10 202 0.5× 21 0.5× 52 1.5× 44 1.6× 26 266
S. M. Guertin United States 12 428 1.1× 101 2.3× 7 0.2× 2 0.1× 25 1.0× 24 446
C.I. Lee United States 10 446 1.1× 57 1.3× 42 1.2× 24 1.0× 16 465
U. Pisani Italy 11 615 1.5× 12 0.3× 82 2.3× 4 0.1× 7 0.3× 46 664
Tomasz Jeżyński Poland 9 145 0.4× 15 0.3× 26 0.7× 2 0.1× 27 1.1× 33 207
Y. Boulghassoul United States 16 882 2.2× 315 7.3× 25 0.7× 2 0.1× 35 1.5× 23 903

Countries citing papers authored by В.С. Першенков

Since Specialization
Citations

This map shows the geographic impact of В.С. Першенков's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by В.С. Першенков with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites В.С. Першенков more than expected).

Fields of papers citing papers by В.С. Першенков

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by В.С. Першенков. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by В.С. Першенков. The network helps show where В.С. Першенков may publish in the future.

Co-authorship network of co-authors of В.С. Першенков

This figure shows the co-authorship network connecting the top 25 collaborators of В.С. Першенков. A scholar is included among the top collaborators of В.С. Першенков based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with В.С. Першенков. В.С. Першенков is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Першенков, В.С., et al.. (2019). Fast Switching of the Polarity of Dual Mode Ion Mobility Spectrometer. 333–336. 5 indexed citations
2.
Першенков, В.С., et al.. (2019). Application of the ion mixing method for doping near surface layers of the silicon single crystals. IOP Conference Series Materials Science and Engineering. 498. 12025–12025. 1 indexed citations
3.
Першенков, В.С., et al.. (2019). Experimental Estimation of Input Offset Voltage Radiation Degradation Rate in Bipolar Operational Amplifiers. 43. 251–254. 2 indexed citations
4.
Першенков, В.С., et al.. (2019). Reduced Low Dose Rate Sensitivity (RLDRS) in Bipolar Devices. 1. 185–188. 1 indexed citations
5.
Kopylov, Philipp, Syrkin Al, V.V. Belyakov, et al.. (2016). Proton Transfer Reaction Mass Spectrometry of Exhaled Breath in Diagnostics of Heart Failure. Kardiologiia. 5_2016(5). 37–41. 7 indexed citations
6.
Першенков, В.С., et al.. (2016). Electromagnetic pulse effects and damage mechanism on the semiconductor electronics. Facta universitatis - series Electronics and Energetics. 29(4). 621–629. 19 indexed citations
7.
Першенков, В.С., et al.. (2016). ELDRS in SiGe transistors for room and low-temperature irradiation. Microelectronics Reliability. 63. 56–59. 4 indexed citations
8.
Першенков, В.С., et al.. (2016). ELDRS in a wide range of total doses. IOP Conference Series Materials Science and Engineering. 151. 12008–12008. 2 indexed citations
9.
Sogoyan, Armen V., et al.. (2014). The hydrogenic-electron model of accumulation of surface states on the oxide-semiconductor interface under the effects of ionizing radiation. Russian Microelectronics. 43(2). 162–164. 9 indexed citations
10.
Першенков, В.С., et al.. (2014). Mechanism of the Saturation of the Radiation Induced Interface Trap Buildup. Applied Mechanics and Materials. 565. 142–146. 3 indexed citations
11.
Першенков, В.С., et al.. (2014). Radiation Degradation Modeling of Bipolar Operational Amplifier Input Offset Voltage in LTSpice IV. Applied Mechanics and Materials. 565. 138–141.
12.
Першенков, В.С., et al.. (2006). The Electronic and Program Control System of X-Ray Ion Mobility Spectrometer. 647–649. 1 indexed citations
13.
Першенков, В.С., et al.. (2005). X-ray ion mobility spectrometer. Microelectronics Reliability. 46(2-4). 641–644. 14 indexed citations
14.
Belyakov, V.V., В.С. Першенков, Gennady I. Zebrev, et al.. (2003). Methods for the Prediction of Total-Dose Effects on Modern Integrated Semiconductor Devices in Space: A Review. Russian Microelectronics. 32(1). 25–39. 19 indexed citations
15.
Belyakov, V.V., et al.. (2003). Prediction of Local and Global Ionization Effects on ICs: The Synergy between Numerical and Physical Simulation. Russian Microelectronics. 32(2). 105–118. 9 indexed citations
16.
Sogoyan, Armen V., et al.. (2002). Thermal- and radiation-induced interface traps in MOS devices. 69–72. 10 indexed citations
17.
Belyakov, V.V., et al.. (2000). IC’s radiation effects modeling and estimation. Microelectronics Reliability. 40(12). 1997–2018. 17 indexed citations
18.
Першенков, В.С., et al.. (1999). Single transistor technique for interface trap density measurement in irradiated MOS devices. Microelectronics Reliability. 39(4). 497–505. 1 indexed citations
19.
Першенков, В.С., et al.. (1995). Kinetics of thermally stimulated relaxation of space charge in the below-gate SiO 2 in MOS structures bombarded with 60 Co γ rays. Semiconductors. 29(2). 162–164. 1 indexed citations
20.
Belyakov, V.V., et al.. (1995). Use of MOS structures for the investigation of low-dose-rate effects in bipolar transistors. IEEE Transactions on Nuclear Science. 42(6). 1660–1666. 38 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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