R. S. Sillmon

485 total citations
18 papers, 389 citations indexed

About

R. S. Sillmon is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, R. S. Sillmon has authored 18 papers receiving a total of 389 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Atomic and Molecular Physics, and Optics, 12 papers in Electrical and Electronic Engineering and 5 papers in Materials Chemistry. Recurrent topics in R. S. Sillmon's work include Semiconductor Quantum Structures and Devices (11 papers), Semiconductor materials and devices (7 papers) and Semiconductor materials and interfaces (3 papers). R. S. Sillmon is often cited by papers focused on Semiconductor Quantum Structures and Devices (11 papers), Semiconductor materials and devices (7 papers) and Semiconductor materials and interfaces (3 papers). R. S. Sillmon collaborates with scholars based in United States and Japan. R. S. Sillmon's co-authors include N. Bottka, D. Kurt Gaskill, J. E. Butler, R. Glosser, R.L. Henry, T. A. Kennedy, Michael G. Spencer, E. R. Glaser, W. F. Tseng and T. F. Kuech and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

R. S. Sillmon

16 papers receiving 362 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. S. Sillmon United States 9 282 282 90 57 31 18 389
C. Anayama Japan 11 295 1.0× 303 1.1× 71 0.8× 73 1.3× 40 1.3× 25 378
K. L. Hess United States 10 315 1.1× 332 1.2× 104 1.2× 56 1.0× 41 1.3× 22 413
Tonao Yuasa Japan 12 378 1.3× 374 1.3× 89 1.0× 49 0.9× 34 1.1× 20 461
S. N. G. Chu United States 11 368 1.3× 331 1.2× 89 1.0× 47 0.8× 28 0.9× 26 434
A. G. Thompson United States 8 336 1.2× 289 1.0× 156 1.7× 72 1.3× 36 1.2× 11 469
Seiji Kawata Japan 9 362 1.3× 305 1.1× 177 2.0× 51 0.9× 30 1.0× 11 420
T. Katsuyama Japan 13 352 1.2× 433 1.5× 84 0.9× 42 0.7× 48 1.5× 44 492
Bob Wilson 2 455 1.6× 455 1.6× 109 1.2× 76 1.3× 38 1.2× 4 570
M. Baudet France 12 463 1.6× 337 1.2× 151 1.7× 57 1.0× 37 1.2× 25 526
V. G. Mokerov Russia 11 253 0.9× 234 0.8× 89 1.0× 77 1.4× 31 1.0× 76 350

Countries citing papers authored by R. S. Sillmon

Since Specialization
Citations

This map shows the geographic impact of R. S. Sillmon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. S. Sillmon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. S. Sillmon more than expected).

Fields of papers citing papers by R. S. Sillmon

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. S. Sillmon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. S. Sillmon. The network helps show where R. S. Sillmon may publish in the future.

Co-authorship network of co-authors of R. S. Sillmon

This figure shows the co-authorship network connecting the top 25 collaborators of R. S. Sillmon. A scholar is included among the top collaborators of R. S. Sillmon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. S. Sillmon. R. S. Sillmon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

18 of 18 papers shown
1.
Smith, A.W., et al.. (2003). Development of hybrid photodetectors using single-crystal III–V photocathodes. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 504(1-3). 182–187. 5 indexed citations
2.
Shaw, J. L., R. S. Sillmon, H.F. Gray, & Daeui Park. (2002). Field emission from GaAs pyramids fabricated using selected area vapor phase epitaxy. 818. 408–412.
3.
Papanicolaou, N. A., Stephen H. Jones, J.R. Jones, W.T. Anderson, & R. S. Sillmon. (1992). High temperature characteristics of amorphous TiWSix nonalloyed ohmic contacts to GaAs. Journal of Applied Physics. 72(10). 4954–4957. 5 indexed citations
4.
Glaser, E. R., T. A. Kennedy, Bálint Molnár, et al.. (1991). Optically detected magnetic resonance of group-IV and group-VI impurities in AlAs andAlxGa1−xAs withx≥0.35. Physical review. B, Condensed matter. 43(18). 14540–14556. 20 indexed citations
5.
Glosser, R., et al.. (1991). Carrier concentration determination by photoreflectance at E1 in thin film, highly doped GaAs. Applied Physics Letters. 59(10). 1218–1220. 9 indexed citations
6.
Sillmon, R. S. & J. A. Freitas. (1990). On-demand atmospheric pressure storage system for AsH3 and PH3. Applied Physics Letters. 56(2). 174–176. 4 indexed citations
7.
Glaser, E. R., T. A. Kennedy, R. S. Sillmon, & Michael G. Spencer. (1989). Symmetry of the Si shallow donor state in AlAs/GaAs andAlxGa1−xAs/GaAs heterostructures. Physical review. B, Condensed matter. 40(5). 3447–3450. 23 indexed citations
8.
Sillmon, R. S., Steven M. Hues, D. Kurt Gaskill, N. Bottka, & Philip E. Thompson. (1989). OMVPE growth of p-AlGaAs/GaAs heterojunctions using diethylberyllium. Journal of Electronic Materials. 18(4). 501–504. 1 indexed citations
9.
Bottka, N., D. Kurt Gaskill, R. S. Sillmon, R.L. Henry, & R. Glosser. (1988). Modulation spectroscopy as a tool for electronic material characterization. Journal of Electronic Materials. 17(2). 161–170. 122 indexed citations
10.
Gaskill, D. Kurt, N. Bottka, & R. S. Sillmon. (1988). Photoreflectance surface Fermi level measurements of GaAs subjected to various chemical treatments. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 6(5). 1497–1501. 34 indexed citations
11.
Gaskill, D. Kurt, et al.. (1988). IR diode laser probing of OMVPE kinetics. Journal of Crystal Growth. 93(1-4). 127–133. 27 indexed citations
12.
Gaskill, D. Kurt, J. L. Davis, R. S. Sillmon, & Michael Sydor. (1987). Non-Destructive Characterization Of Carrier Concentration And Thickness Uniformity For Semiconductors Using Infrared Reflectance Spectroscopy. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 794. 231–231. 4 indexed citations
13.
Sillmon, R. S., N. Bottka, J. E. Butler, & D. Kurt Gaskill. (1986). An ultra-fast gas delivery system for producing abrupt compositional switching in OMVPE. Journal of Crystal Growth. 77(1-3). 73–78. 17 indexed citations
14.
Butler, J. E., N. Bottka, R. S. Sillmon, & D. Kurt Gaskill. (1986). In situ, real-time diagnostics of OMVPE using IR-diode laser spectroscopy. Journal of Crystal Growth. 77(1-3). 163–171. 101 indexed citations
15.
Bottka, N., R. S. Sillmon, & W. F. Tseng. (1984). Silicon and beryllium doping of OMVPE grown AlxGa1−xAs (x = 0−0.3) using silane and diethylberyllium. Journal of Crystal Growth. 68(1). 54–59. 14 indexed citations
16.
Maracas, G.N., David J. Moore, R. S. Sillmon, et al.. (1983). <title>A novel GaInAs/GaAs Heterostructure Interdigital Photodetector (HIP) Using Lattice Mismatched Epitaxial Layers</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 439. 202–206. 1 indexed citations
17.
18.
Timmons, M. L., et al.. (1983). GaAsP-InGaAs superlattice light-emitting diodes. 692–695. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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