J. Požėla

927 total citations
86 papers, 695 citations indexed

About

J. Požėla is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, J. Požėla has authored 86 papers receiving a total of 695 indexed citations (citations by other indexed papers that have themselves been cited), including 64 papers in Atomic and Molecular Physics, and Optics, 53 papers in Electrical and Electronic Engineering and 13 papers in Condensed Matter Physics. Recurrent topics in J. Požėla's work include Semiconductor Quantum Structures and Devices (55 papers), Quantum and electron transport phenomena (20 papers) and Advanced Semiconductor Detectors and Materials (19 papers). J. Požėla is often cited by papers focused on Semiconductor Quantum Structures and Devices (55 papers), Quantum and electron transport phenomena (20 papers) and Advanced Semiconductor Detectors and Materials (19 papers). J. Požėla collaborates with scholars based in Lithuania, Russia and United Kingdom. J. Požėla's co-authors include A. Reklaǐtis, K. Požela, A. Matulionis, A. Namajūnas, A. Tamaševičius, V. G. Mokerov, Algirdas Sužiedėlis, J. K. Furdyna, Г. Б. Галиев and K. Smith and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Computer Physics Communications.

In The Last Decade

J. Požėla

80 papers receiving 604 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Požėla Lithuania 13 502 496 112 83 69 86 695
J. C. Vaissière France 15 459 0.9× 385 0.8× 117 1.0× 34 0.4× 91 1.3× 66 629
Alex Harwit United States 10 497 1.0× 719 1.4× 62 0.6× 101 1.2× 130 1.9× 32 875
J. G. Ruch United States 8 773 1.5× 703 1.4× 120 1.1× 48 0.6× 86 1.2× 12 989
Faraz Najafi United States 11 440 0.9× 420 0.8× 59 0.5× 122 1.5× 78 1.1× 20 727
Francesco Bellei United States 8 431 0.9× 402 0.8× 73 0.7× 116 1.4× 88 1.3× 12 750
P.E. Simmonds United Kingdom 22 656 1.3× 1.2k 2.4× 220 2.0× 37 0.4× 197 2.9× 72 1.3k
A. Kastalsky United States 20 1.0k 2.0× 1.2k 2.5× 375 3.3× 99 1.2× 188 2.7× 59 1.5k
A. Poelaert Netherlands 11 165 0.3× 123 0.2× 206 1.8× 44 0.5× 65 0.9× 31 432
Yoshimasa Murayama Japan 14 227 0.5× 636 1.3× 265 2.4× 35 0.4× 94 1.4× 57 785
W.C.B. Peatman United States 13 453 0.9× 319 0.6× 60 0.5× 25 0.3× 43 0.6× 43 564

Countries citing papers authored by J. Požėla

Since Specialization
Citations

This map shows the geographic impact of J. Požėla's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Požėla with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Požėla more than expected).

Fields of papers citing papers by J. Požėla

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Požėla. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Požėla. The network helps show where J. Požėla may publish in the future.

Co-authorship network of co-authors of J. Požėla

This figure shows the co-authorship network connecting the top 25 collaborators of J. Požėla. A scholar is included among the top collaborators of J. Požėla based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Požėla. J. Požėla is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Požela, K., et al.. (2014). Selective thermal terahertz emission from GaAs and AlGaAs. Applied Physics Letters. 105(9). 5 indexed citations
2.
Požėla, J., et al.. (2012). Interaction of terahertz radiation with surface and interface plasmon–phonons in AlGaAs/GaAs and GaN/Al2O3 heterostructures. Applied Physics A. 110(1). 153–156. 7 indexed citations
3.
4.
Požėla, J., et al.. (2009). Transport of electrons in a GaAs quantum well in high electric fields. Semiconductors. 43(9). 1177–1181. 6 indexed citations
5.
Miller, Albert J., et al.. (2009). Graded-gap Al Ga1−As high-energy X-ray radiation dosimeter. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 607(1). 71–74. 2 indexed citations
6.
Mokerov, V. G., И. С. Васильевский, Г. Б. Галиев, et al.. (2009). Drift velocity of electrons in quantum wells in high electric fields. Semiconductors. 43(4). 458–462. 9 indexed citations
7.
Požėla, J., et al.. (2009). High‐field electron mobility in InGaAs quantum wells. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(12). 2713–2715. 6 indexed citations
8.
Požėla, J., et al.. (2007). Enhancement of electron drift velocity in a quantum well by confinement of polar optical phonons. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 4(2). 632–634. 1 indexed citations
9.
Požėla, J., et al.. (2007). Scattering of electrons by confined interface polar optical phonons in a double-barrier heterostructure. Semiconductors. 41(9). 1074–1079. 10 indexed citations
10.
Požėla, J., et al.. (2005). Enhancement of electron saturated drift velocity in a quantum well by confinement of polar optical phonons. Lithuanian Journal of Physics. 45(6). 445–451. 2 indexed citations
11.
Požėla, J., et al.. (2002). Enhancement of electron mobility in 2D MODFET structures. 10. 90–93. 1 indexed citations
12.
Požela, K., et al.. (2001). Conductivity of modulation-doped AlGaAs/GaAs/AlGaAs quantum well with an inserted thin AlAs barrier. Nanotechnology. 12(4). 566–569. 2 indexed citations
13.
Liberis, J., et al.. (1989). Length dependent hot electron noise in doped GaAs. Solid-State Electronics. 32(12). 1647–1650. 8 indexed citations
14.
Gruz̆inskis, V., R. Mickevičius, J. Požėla, & A. Reklaǐtis. (1988). Collective Electron Interaction in Double-Barrier GaAs Structures. Europhysics Letters (EPL). 5(4). 339–341. 8 indexed citations
15.
Gruz̆inskis, V., Skirmantas Keršulis, R. Mickevičius, J. Požėla, & A. Reklaǐtis. (1988). Collective electron interaction in double-barrier GaAs transistors. Solid-State Electronics. 31(3-4). 345–347. 6 indexed citations
16.
Bumelienė, Skaidra, J. Požėla, & A. Tamaševičius. (1986). Period multiplying and chaotic response in driven n‐Ge with repulsive defect centres. physica status solidi (b). 134(1). 6 indexed citations
17.
Matulionis, A., J. Požėla, & E. Starikov. (1981). Hot electron velocity correlation and diffusion in a many layered heterostructure. physica status solidi (a). 68(2). K149–K152. 3 indexed citations
18.
Furdyna, J. K., et al.. (1979). Microwave effects in narrow-gap semiconductors (I). physica status solidi (a). 53(1). 11–41. 10 indexed citations
19.
Matulionis, A., J. Požėla, & A. Reklaǐtis. (1975). Monte Carlo treatment of electron-electron collisions. Solid State Communications. 16(10-11). 1133–1137. 36 indexed citations
20.
Ašmontas, S., et al.. (1972). The Photogradient E.M.F. of Hot Carriers. physica status solidi (b). 51(1). 225–232. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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